Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Faleev Nikolai"'
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 2 (2024)
In the paper, the influence of growth factors and silicon surface condition on the epitaxial formation of single-domain GaP buffer layers on Si (001) has been studied. A novel two-stage growth technique for the epitaxial building-up of this structure
Externí odkaz:
https://doaj.org/article/b84541f2d6ee44f69678a099516a8d7e
Autor:
Fedorov, Vladimir V., Dvoretckaia, Liliia N., Mozharov, Alexey M., Fedina, Sergey V., Kirilenko, Demid A., Berezovskaya, Tamara N., Faleev, Nikolai N., Yunin, Pavel A., Drozdov, Mikhail N., Mukhin, Ivan S.
Publikováno v:
In Materials Science in Semiconductor Processing December 2023 168
Autor:
Gangopadhyay, Abhinandan, Zhang, Chaomin, Maros, Aymeric, Faleev, Nikolai, King, Richard R., Honsberg, Christiana B., Smith, David J.
Publikováno v:
In Scripta Materialia 1 March 2023 225
Publikováno v:
In Acta Materialia 1 January 2019 162:103-115
Autor:
Lubyshev, Dmitri, Fastenau, Joel M., Kattner, Mike, Frey, Phil, Nelson, Scott A., Flick, Ryan, Rogers, Michael, Liu, Amy W.K., Flint, Patrick, Faleev, Nikolai
Publikováno v:
In Infrared Physics and Technology December 2018 95:27-32
Publikováno v:
In Journal of Crystal Growth 1 December 2018 503:36-44
Publikováno v:
In Scripta Materialia August 2018 153:77-80
Publikováno v:
In Journal of Crystal Growth 1 October 2017 475:83-87
Autor:
Ding, Laura, Zhang, Chaomin, Nærland, Tine Uberg, Faleev, Nikolai, Honsberg, Christiana, Bertoni, Mariana I.
Publikováno v:
In Energy Procedia August 2016 92:617-623
Publikováno v:
In Journal of Crystal Growth 1 September 2015 425:43-48