Zobrazeno 1 - 10
of 685
pro vyhledávání: '"Fal'ko, Vladimir"'
Autor:
Rozhansky, Igor, Fal'ko, Vladimir
Publikováno v:
Phys. Rev. B 110, L161404 (2024)
We show that spin-orbit splitting (SOS) in monolayers of semiconducting transition metal dichalcogenides (TMDs) is substantially enhanced by electron-electron interaction. This effect, similar to the exchange-enhancement of the electron g-factor, is
Externí odkaz:
http://arxiv.org/abs/2410.12125
Autor:
Soltero, Isaac, Fal'ko, Vladimir I.
Dislocations in van der Waals materials are linear defects confined to the interfaces between consecutive stoichiometric monolayers of a bulk layered crystal. Here, we present a mesoscale model for the description of interlayer dislocations in thin f
Externí odkaz:
http://arxiv.org/abs/2409.12030
Autor:
Ge, Zhehao, Graf, Anton M., Keski-Rahkonen, Joonas, Slizovskiy, Sergey, Polizogopoulos, Peter, Taniguchi, Takashi, Watanabe, Kenji, Van Haren, Ryan, Lederman, David, Fal'ko, Vladimir I., Heller, Eric J., Velasco Jr, Jairo
Quantum scars refer to eigenstates with enhanced probability density along unstable classical periodic orbits (POs). First predicted 40 years ago, scars are special eigenstates that counterintuitively defy ergodicity in quantum systems whose classica
Externí odkaz:
http://arxiv.org/abs/2409.10675
Autor:
Boschi, Alex, Gebeyehu, Zewdu M., Slizovskiy, Sergey, Mišeikis, Vaidotas, Forti, Stiven, Rossi, Antonio, Watanabe, Kenji, Taniguchi, Takashi, Beltram, Fabio, Fal'ko, Vladimir I., Coletti, Camilla, Pezzini, Sergio
Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry
Externí odkaz:
http://arxiv.org/abs/2406.04732
Publikováno v:
Nat Commun 15, 6838 (2024)
Semiconducting transition metal dichalcogenides (MX$_2$) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX$_2$ is ferroelectric
Externí odkaz:
http://arxiv.org/abs/2405.15040
Autor:
Rozhansky, Igor, Fal'ko, Vladimir
In this study, we present an effective tight-binding model for an accurate description of the lowest energy quadruplet of conduction band in a ferromagnetic CrX$_3$ monolayer, tuned to the complementary \textit{ab initio} density functional theory si
Externí odkaz:
http://arxiv.org/abs/2404.18858
Autor:
Gudarzi, Mohsen Moazzami, Slizovskiy, Sergey, Mao, Boyang, Tóvári, Endre, Pinter, Gergo, Sanderson, David, Asaad, Maryana, Xiang, Ying, Wang, Zhiyuan, Guo, Jianqiang, Spencer, Ben F., Geim, Alexandra A., Fal'ko, Vladimir I., Kretinin, Andrey V.
Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for gra
Externí odkaz:
http://arxiv.org/abs/2404.17738
Polytypes of tetralayer graphene (TLG: Bernal, rhombohedral and mixed stacking) are crystalline structures with different symmetries. Among those, mixed-stacking tetralayers lack inversion symmetry, which allows for intrinsic spontaneous out-of-plane
Externí odkaz:
http://arxiv.org/abs/2403.09354
Autor:
Catanzaro, Alessandro, Genco, Armando, Louca, Charalambos, Ruiz-Tijerina, David A., Gillard, Daniel J., Sortino, Luca, Kozikov, Aleksey, Alexeev, Evgeny M., Pisoni, Riccardo, Hague, Lee, Watanabe, Kenji, Taniguchi, Takashi, Ensslin, Klauss, Novoselov, Kostya S., Fal'ko, Vladimir, Tartakovskii, Alexander I.
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostr
Externí odkaz:
http://arxiv.org/abs/2309.13312
Autor:
Guarochico-Moreira, Victor H., Anderson, Christopher R., Fal'ko, Vladimir, Grigorieva, Irina V., Tóvári, Endre, Hamer, Matthew, Gorbachev, Roman, Liu, Song, Edgar, James H., Principi, Alessandro, Kretinin, Andrey V., Vera-Marun, Ivan J.
Publikováno v:
Phys. Rev. B 108, 115418 (2023)
Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within h
Externí odkaz:
http://arxiv.org/abs/2306.08705