Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Faissal El Hamidi"'
Autor:
Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee, Hassan Maher
Publikováno v:
Energies, Vol 14, Iss 19, p 6098 (2021)
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simu
Externí odkaz:
https://doaj.org/article/3d3f7c5ffaf646209be4b4e0e58656ed
Autor:
Soundos Maher, Abderrahim Rahim Boucherif, Faissal El Hamidi, Guillaume Gommé, Richard Arès, Marie Clara Pepin, Meriem Bouchilaoun, Hassan Maher, Gwen Rolland, Ahmed Chakroun, Christophe Rodriguez, Tom MacElwee
Publikováno v:
Energies
Energies, MDPI, 2021, 14 (19), pp.6098. ⟨10.3390/en14196098⟩
Energies; Volume 14; Issue 19; Pages: 6098
Energies, Vol 14, Iss 6098, p 6098 (2021)
Energies, MDPI, 2021, 14 (19), pp.6098. ⟨10.3390/en14196098⟩
Energies; Volume 14; Issue 19; Pages: 6098
Energies, Vol 14, Iss 6098, p 6098 (2021)
International audience; In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::969fa8736886ddc258dbf52f2ece4c74
https://hal.archives-ouvertes.fr/hal-03358709
https://hal.archives-ouvertes.fr/hal-03358709