Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Failure modes of electronics"'
Autor:
Zhaonian Yang, Panqi Gao
Publikováno v:
IEEE Access, Vol 8, Pp 158273-158280 (2020)
In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation. The operating principle of the proposed voltage de
Autor:
Chao-Yang Ke, Ming-Dou Ker
Publikováno v:
IRPS
In USB type-C interface, owing to the shrinking space between the pins of connector and the required high-power delivery, the electrical overstress (EOS) events due to some pins shorting to V BUS pin during plugging or unplugging operations had been
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 18:391-396
With this paper, we review several different failure mechanisms of commercial light emitting diodes operating in real-life applications. We consider both high power and mid power devices, which represent the biggest share of the market. Real-life app
Autor:
Chunlei Wu
Publikováno v:
Microelectronics Reliability. :203-207
For identifying the real failure root cause of so called EOS cases, a new term “Electrically Induced Physical Damage (EIPD)” has been published by JEDEC JEP174 in 2016. In JEP174, the failure root cause of EIPD could not be determined as EOS simp
Autor:
Enrico Zanoni, Nicola Renso, Matteo Buffolo, Gaudenzio Meneghesso, C. De Santi, Matteo Meneghini, M. Ronzani
Publikováno v:
Microelectronics Reliability. :887-890
This work presents the analysis of the degradation mechanisms and of the electro-optical characteristics of light emitting diodes (LEDs) submitted to electrical overstress. The analysis was carried out by a custom-setup, that allows us to measure the
Autor:
Em Julius De La Cruz
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
Root cause determination of electrical overstress (EOS) failures has become significantly important because of the automotive industry's continual quest for quality improvement. The determination of EOS as the failure type in a defective IC is import
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
Damages from Electrical Overstress (EOS) are the leading reason of returns of integrate circuits and systems that have failed in PCB assembly or final field. While a wide variety of root causes could result to EOS damage, it is difficult for analyzer
Autor:
Peter Majewicz
Publikováno v:
2019 IEEE Aerospace Conference.
Aerospace electrical systems are required to withstand and adequately operate in extremely harsh environments that include, for example, high radiation exposure, temperature extremes, intense vibrational stress and drastic temperature cycling. The na
Publikováno v:
Sensors and Materials. 32:1889