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pro vyhledávání: '"Fahima Derkaoui"'
Autor:
Pierre Pfeiffer, Ogechi Vivian Nwadiaru, Warda Hetatache, Y. Kouhlane, N. Khelifati, Assia Demagh, Salah Mezghiche, Nacer-Eddine Demagh, Chahinez Nasraoui, D. Bouhafs, Abdelkader Guenda, Fahima Derkaoui
Publikováno v:
Heat and Mass Transfer. 54:3081-3087
In this study, the carrier lifetime variation of p-type boron-doped Czochralski silicon (Cz-Si) wafers was investigated after a direct rapid thermal processing (RTP). Two wafers were passivated by silicon nitride (SiNx:H) layers, deposited by a PECVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c7239033a3a6fbdf2b68f46363907d8
https://doi.org/10.1007/s00231-018-2355-x
https://doi.org/10.1007/s00231-018-2355-x
