Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Fagas, Giorgos"'
Autor:
Bugu, Sinan, Biradar, Sheshank, Blake, Alan, Liu, CheWee, Myronovd, Maksym, Duffy, Ray, Fagas, Giorgos, Petkov, Nikolay
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to realize large
Externí odkaz:
http://arxiv.org/abs/2408.14966
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, pp. 1-2
We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function (NEGF) quantum
Externí odkaz:
http://arxiv.org/abs/2108.07013
Autor:
Petkov, Nikolay, Georgieva, Margarita, Bugu, Sinan, Duffy, Ray, McCarthy, Brendan, Myronov, Maksym, Kelleher, Ann-Marie, Maxwell, Graeme, Fagas, Giorgos
Publikováno v:
In Microelectronic Engineering 15 August 2023 280
Autor:
Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Lacambra, Carlos Martinez, Haverty, Michael G., Kuhn, Kelin J., Shankar, Sadasivan, Greer, James C.
Publikováno v:
IEEE Trans. Nanotechnol., 12, 1075, Nov. 2013
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive geometries
Externí odkaz:
http://arxiv.org/abs/1303.3755
Autor:
Sharma, Dimpy, Ansari, Lida, Feldman, Baruch, Iakovidis, Marios, Greer, James, Fagas, Giorgos
Publikováno v:
J. Appl. Phys. 113, 203708 (2013)
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a cross-platform quantu
Externí odkaz:
http://arxiv.org/abs/1302.1041
Publikováno v:
Appl. Phys. Lett. 97, 062105 (2010)
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are that Si-bas
Externí odkaz:
http://arxiv.org/abs/1003.4631
Publikováno v:
Nano Lett. 7, 34 (2007)
Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhi
Externí odkaz:
http://arxiv.org/abs/1002.0427
Autor:
Fagas, Giorgos, Greer, James C.
Publikováno v:
Nano Lett. 9, 1856 (2009)
The influence of local oxidation in silicon nanowires on hole transport, and hence the effect of varying the oxidation state of silicon atoms at the wire surface, is studied using density functional theory in conjunction with a Green's function scatt
Externí odkaz:
http://arxiv.org/abs/1002.0430
Autor:
Drouvelis, Panagiotis, Fagas, Giorgos
We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a three-dimensional ef
Externí odkaz:
http://arxiv.org/abs/1002.0435
Autor:
Fagas, Giorgos, Greer, James C.
Publikováno v:
Nanotechnology 18, 424010 (2007)
For investigation of electron transport on the nanoscale, a system possessing a simple to interpret electronic structure is composed of alkane chains bridging two electrodes via end groups; to date the majority of experiments and theoretical investig
Externí odkaz:
http://arxiv.org/abs/0706.0835