Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Fadhil K. Alfadhili"'
Autor:
Deng-Bing Li, Zhaoning Song, Sandip S. Bista, Fadhil K. Alfadhili, Rasha A. Awni, Niraj Shrestha, DeMilt Rhiannon, Adam B. Phillips, Michael J. Heben, Randy J. Ellingson, Feng Yan, Yanfa Yan
Publikováno v:
Materials, Vol 13, Iss 8, p 1991 (2020)
The replacement of traditional CdS with zinc magnesium oxide (ZMO) has been demonstrated as being helpful to boost power conversion efficiency of cadmium telluride (CdTe) solar cells to over 18%, due to the reduced interface recombination and parasit
Externí odkaz:
https://doaj.org/article/2ddd785163f74b8e8254d2146e761406
Autor:
Fadhil K. Alfadhili, Adam B. Phillips, Manoj K. Jamarkattel, Bhuiyan M. Anwar, Prabodika N. Kaluarachchi, Zahrah S. Almutawah, Abdul Quader, Deng-Bing Li, Yanfa Yan, Randy J. Ellingson, Micdael J. Heben
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Autor:
Manoj K. Jamarkattel, Xavier Mathew, Adam B. Phillips, Ebin Bastola, Kamala Khanal Subedi, Fadhil K. Alfadhili, Abasi Abudulimu, Jared D. Friedl, Rasha A. Awni, Deng-Bing Li, Mohammed A. Razooqi, Prakash Koirala, Robert W. Collins, Yanfa Yan, Randy J. Ellingson, Michael J. Heben
Publikováno v:
ACS applied materialsinterfaces. 14(17)
The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe s
Autor:
Randy J. Ellingson, Adam B. Phillips, Michael J. Heben, Fadhil K. Alfadhili, Adam I Halaoui, Deng-Bing Li, Manoj K. Jamarkattel, Bhuiyan M. M. Anwar, Yanfa Yan, Geethika K. Liyanage, Corey R. Grice, Craig L. Perkins, Kamala Khanal Subedi
Publikováno v:
ACS Applied Materials & Interfaces. 12:51337-51343
Although back-surface passivation plays an important role in high-efficiency photovoltaics, it has not yet been definitively demonstrated for CdTe. Here, we present a solution-based process, which achieves passivation and improved electrical performa
Autor:
Randy J. Ellingson, Fadhil K. Alfadhili, Michael J. Heben, Khagendra P. Bhandari, Ebin Bastola, Adam J. Phillips, Geethika K. Liyanage, Suneth C. Watthage, Zhaoning Song
Publikováno v:
Progress in Photovoltaics: Research and Applications. 28:1024-1033
Autor:
Fadhil K. Alfadhili, Kamala Khanal Subedi, Geethika K. Liyanage, Adam B. Phillips, Michael J. Heben, Randy J. Ellingson
Publikováno v:
ACS Applied Energy Materials. 3:6072-6078
Because bifacial solar cells increase the power generated per area, their market share is projected to increase over the next decade. While silicon technologies have implemented bifacial technology...
Publikováno v:
Journal of Materials Research. 34:3988-3997
Cadmium telluride (CdTe) is one of the leading photovoltaic technologies with a market share of around 5%. However, there still exist challenges to fabricate a rear contact for efficient transport of photogenerated holes. Here, etching effects of var
Autor:
Fadhil K. Alfadhili, Geethika K. Liyanage, Adam B. Phillips, Michael J. Heben, Randy J. Ellingson
Publikováno v:
ACS Applied Energy Materials. 2:5419-5426
As the performance of the front interface and the CdTe absorber are improved, minority carrier recombination at the back of the device will limit the photoconversion efficiency. To determine the li...
Autor:
Fadhil K. Alfadhili, Geethika K. Liyanage, Manoj K. Jamarkattel, Adam B. Phillips, Michael J. Heben, Jacob M. Gibbs
Publikováno v:
MRS Advances. 4:913-919
Formation of a low barrier back contact plays a critical role in improving the photoconversion efficiency of the CdTe solar cells. Incorporating a buffer layer to minimize the band bending at the back of the CdTe device can significantly lower the ba
Autor:
Randy J. Ellingson, Ebin Bastola, Adam B. Phillips, Michael J. Heben, Fadhil K. Alfadhili, Jacob M. Gibbs, Ramez Hossenian Ahangharnejhad
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Due to the low Fermi level position in CdTe, back contacts to CdTe devices often lead to downward band bending at the back interface. SWCNTs potentially have a lower Fermi level than CdTe, but obtaining this level of doping in the SWCNTs after they h