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pro vyhledávání: '"Fadaly, E. M. T."'
Autor:
Fadaly, E. M. T., Dijkstra, A., Suckert, J. R., Ziss, D., Tilburg, M. A. J. v., Mao, C., Ren, Y., Lange, V. T. v., Kölling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M., Bakkers, E. P. A. M.
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot e
Externí odkaz:
http://arxiv.org/abs/1911.00726