Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Fabrizio Lo Conte"'
Publikováno v:
IEEE Transactions on Power Electronics. 26:2788-2793
In this paper, a modeling methodology is validated based on an enhanced model of the diode, that we have developed to simulate substrate current coupling mechanisms on a typical H -bridge structure. An equivalent schematic based on an enhanced model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8988bc8dcfb2f28607f7676a0b2c3c7f
https://doi.org/10.1109/tpel.2011.2119495
https://doi.org/10.1109/tpel.2011.2119495
Publikováno v:
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).
This paper presents a modeling methodology for substrate current coupling mechanisms. An equivalent schematic is made using enhanced model of resistances and diodes. These enhanced components were developed in previous work and account for minority a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3703f45b79454534d14f8fac151d8cd5
https://doi.org/10.1109/essderc.2011.6044208
https://doi.org/10.1109/essderc.2011.6044208
Publikováno v:
ISCAS
In this paper, a modeling methodology able to create an equivalent schematic of an High-Voltage integrated circuit is developed. The equivalent schematic is based on enhanced model of diodes and resistances, accounting for minority and majority carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7557ccdae3fdafa4ead5ecf5b8aa4874
https://doi.org/10.1109/iscas.2011.5937692
https://doi.org/10.1109/iscas.2011.5937692
Publikováno v:
2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time forum.
A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d005edc9fbf662b5fa7d502a71a75f92
https://doi.org/10.1109/freq.2009.5168235
https://doi.org/10.1109/freq.2009.5168235
This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff343c8f62ddac40aab0bc511fb6491c
https://infoscience.epfl.ch/record/153140
https://infoscience.epfl.ch/record/153140
This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e45014e3498aeb438945c6c6792418a2
https://infoscience.epfl.ch/record/164206
https://infoscience.epfl.ch/record/164206
This paper presents a new approach for substrate parasitic current simulation in smart power integrated circuit. A new compact modeling approach developed in previous work has been used to create an equivalent substrate schematic. The latter is compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78495ee5397799ac75b401270d636326
https://infoscience.epfl.ch/record/154138
https://infoscience.epfl.ch/record/154138