Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Fabrice Severac"'
Autor:
Filadelfo Cristiano, Silke Paul, H. Kheyrandish, Wilfried Lerch, J. Niess, Fabrice Severac, J. Gelpey, Pier-Francesco Fazzini, D. Bolze, A. Martinez-Limia, S. McCoy, Peter Pichler
Publikováno v:
Materials Science and Engineering: B. :3-13
Millisecond annealing as an equipment technology provides temperature profiles which favour dopant activation but nearly eliminate dopant diffusion to form extremely shallow, highly electrically activated junctions. For the 45-nm technology node and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db24e0bd46a15e27e5cdcc7e725216c
https://doi.org/10.1016/j.mseb.2008.08.017
https://doi.org/10.1016/j.mseb.2008.08.017
Autor:
Wilfried Lerch, Eléna Bedel-Pereira, H. Kheyrandish, Fabrice Severac, Filadelfo Cristiano, Silke Paul
Publikováno v:
Materials Science and Engineering: B. :225-228
In this paper, we present an empirical method for the self-consistent interpretation of SIMS and Hall effect measurements of boron-doped ultra-shallow junctions that allows to estimate the activation level of the doped layers (maximum active dopant c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d58ab7339395d5ce48a0ccfb10fd88
https://doi.org/10.1016/j.mseb.2008.08.013
https://doi.org/10.1016/j.mseb.2008.08.013
Autor:
Nick E. B. Cowern, Wilfried Lerch, Nikolay Cherkashin, Y. Lamrani, Fabrice Severac, O. Marcelot, Alain Claverie, Simona Boninelli, M. Gavelle, Fuccio Cristiano, Silke Paul
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
International audience; The interactions between the defects and the implanted dopants are at the origin of the diffusion and activation anomalies that are among the major obstacles to the realisation of ultra-shallow junctions satisfying the ITRS re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5436e4b92c58770ba65143fc6eb54212
https://doi.org/10.1016/j.nimb.2006.10.046
https://doi.org/10.1016/j.nimb.2006.10.046
Publikováno v:
Nanosciences et nanotechnologies.
Resume : Cet article propose une revue des technologies ADN apparues il y a plus de trente ans aux Etats-Unis et explorees depuis comme technologie d’assemblage a l’echelle nanometrique d’objets divers a partir de brins d’ADN. Apres une defin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1efb93362d1ccf2bb07d7e59d5beaf70
https://doi.org/10.51257/a-v1-re212
https://doi.org/10.51257/a-v1-re212
Publikováno v:
Advanced Functional Materials
Advanced Functional Materials, 2012, 22 (2), pp.323-329. ⟨10.1002/adfm.201100763⟩
Advanced Functional Materials, Wiley, 2012, 22 (2), pp.323-329. ⟨10.1002/adfm.201100763⟩
Advanced Functional Materials, 2012, 22 (2), pp.323-329. ⟨10.1002/adfm.201100763⟩
Advanced Functional Materials, Wiley, 2012, 22 (2), pp.323-329. ⟨10.1002/adfm.201100763⟩
International audience; Over the next few years, it is expected that new, energetic, multifunctional materials will be engineered. There is a need for new methods to assemble such materials from manufactured nanopowders. In this article, we demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbbb6329196fdb1f931b42168e929825
https://hal.science/hal-01682512
https://hal.science/hal-01682512
Publikováno v:
Langmuir
Langmuir, American Chemical Society, 2011, 27 (11), pp.6598-6605. ⟨10.1021/la200064n⟩
Langmuir, 2011, 27 (11), pp.6598-6605. ⟨10.1021/la200064n⟩
Langmuir, American Chemical Society, 2011, 27 (11), pp.6598-6605. ⟨10.1021/la200064n⟩
Langmuir, 2011, 27 (11), pp.6598-6605. ⟨10.1021/la200064n⟩
We present a new technology to organize microparticles and nanoparticles along micropatterns of variable complexity over centimeter-squared surfaces. This technology relies on the fabrication of textured hydrogels, which serve as templates for direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88123a0fcba7bb895d161095fbbe047b
https://pubmed.ncbi.nlm.nih.gov/21561079
https://pubmed.ncbi.nlm.nih.gov/21561079
Autor:
Fuccio Cristiano, Fabrice Severac, Wilfried Lerch, Silke Paul, Filippo Giannazzo, Xavier Hebras, Pier-Francesco Fazzini, Eléna Bedel-Pereira
Publikováno v:
Journal of applied physics 105 (2009): 043711. doi:10.1063/1.3079505
info:cnr-pdr/source/autori:Severac F, Cristiano F, Bedel-Pereira E, Fazzini PF, Lerch W, Paul S, Hebras X, Giannazzo F/titolo:Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions/doi:10.1063%2F1.3079505/rivista:Journal of applied physics/anno:2009/pagina_da:043711/pagina_a:/intervallo_pagine:043711/volume:105
info:cnr-pdr/source/autori:Severac F, Cristiano F, Bedel-Pereira E, Fazzini PF, Lerch W, Paul S, Hebras X, Giannazzo F/titolo:Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions/doi:10.1063%2F1.3079505/rivista:Journal of applied physics/anno:2009/pagina_da:043711/pagina_a:/intervallo_pagine:043711/volume:105
The Hall scattering factor r(H) has been determined for holes in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters (BICs), combining scanning capacitance microscopy, nanospreading resistanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be8ff46d1614c2dd8a9e41f267c69b5f
https://publications.cnr.it/doc/36547
https://publications.cnr.it/doc/36547
Autor:
Karthik Ravichandran, D. De Salvador, Filadelfo Cristiano, Fabrice Severac, Heiner Ryssel, Enrico Napolitani, Gerd Duscher, Lirong Pei, A. M. Piro, Wolfgang Windl, Peter Pichler, Antonio Terrasi, Naveen Gupta, C. Steen
Publikováno v:
Journal of applied physics 104 (2008).
info:cnr-pdr/source/autori:Pei, L; Duscher, G; Steen, C; Pichler, P; Ssel, HR; Napolitani, E; De Salvador, D; Piro, AM; Terrasi, AT; Severac, F; Cristiano, F; Ravichandran, K; Gupta, N; Windl, W/titolo:Detailed arsenic concentration profiles at Si%2FSiO2 interfaces/doi:/rivista:Journal of applied physics/anno:2008/pagina_da:/pagina_a:/intervallo_pagine:/volume:104
info:cnr-pdr/source/autori:Pei, L; Duscher, G; Steen, C; Pichler, P; Ssel, HR; Napolitani, E; De Salvador, D; Piro, AM; Terrasi, AT; Severac, F; Cristiano, F; Ravichandran, K; Gupta, N; Windl, W/titolo:Detailed arsenic concentration profiles at Si%2FSiO2 interfaces/doi:/rivista:Journal of applied physics/anno:2008/pagina_da:/pagina_a:/intervallo_pagine:/volume:104
The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7a2ae91d9e13ccf0794d61238b52a50
http://hdl.handle.net/20.500.11769/31285
http://hdl.handle.net/20.500.11769/31285
Autor:
J. Gelpey, S. McCoy, Seiichi Shishiguchi, J. Niess, A. Martinez, Wilfried Lerch, D. Bolze, Filadelfo Cristiano, J. Chan, Akira Mineji, Pier-Francesco Fazzini, Fabrice Severac, Peter Pichler, Silke Paul
Publikováno v:
2007 International Workshop on Junction Technology.
The diffusion length of the flash anneal is lowest for all different implant conditions. For the arsenic implant similar diffusion length is seen for all the processes that include a spike anneal due to the fact that the overall thermal budget is mai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f4e49ce367e25db159c868ed088aa8
https://doi.org/10.1109/iwjt.2007.4279966
https://doi.org/10.1109/iwjt.2007.4279966
Autor:
S. McCoy, Fabrice Severac, M. Gavelle, J. Gelpey, J. Niess, T. Selinger, D. Bolze, Fuccio Cristiano, Silke Paul, Wilfried Lerch, Peter Pichler, Simona Boninelli
Publikováno v:
Materials science & engineering. B, Solid-state materials for advanced technology 124-125 (2005): 24–31. doi:10.1016/j.mseb.2005.08.047
info:cnr-pdr/source/autori:W. Lerch (1); S. Paul; (1) J. Niess (1); S. McCoy (2); T. Selinger (2); J. Gelpey (2); F. Cristiano (3); F. Severac (3); M. Gavelle (3); S. Boninelli (4); P. Pichler (5); D. Bolze (6)./titolo:Advanced activation of ultra-shallow junctions using flash-assisted RTP/doi:10.1016%2Fj.mseb.2005.08.047/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2005/pagina_da:24/pagina_a:31/intervallo_pagine:24–31/volume:124-125
info:cnr-pdr/source/autori:W. Lerch (1); S. Paul; (1) J. Niess (1); S. McCoy (2); T. Selinger (2); J. Gelpey (2); F. Cristiano (3); F. Severac (3); M. Gavelle (3); S. Boninelli (4); P. Pichler (5); D. Bolze (6)./titolo:Advanced activation of ultra-shallow junctions using flash-assisted RTP/doi:10.1016%2Fj.mseb.2005.08.047/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2005/pagina_da:24/pagina_a:31/intervallo_pagine:24–31/volume:124-125
A key issue associated with the continuous reduction of dimensions of CMOS transistors is the realization of highly conductive, ultra-shallow junctions for source/drain extensions. Millisecond annealing as an equipment technology provides an ultra-sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b928882ff8d0b680a302567e1ca2f349
http://www.cnr.it/prodotto/i/182621
http://www.cnr.it/prodotto/i/182621