Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Fabrice Paillet"'
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86e5cd9f4d429a58484ef7a9f5259f63
https://doi.org/10.7567/ssdm.2020.l-10-02
https://doi.org/10.7567/ssdm.2020.l-10-02
Publikováno v:
MWSCAS
A 16-phase Pulse Width Modulator (PWM) for Fully Integrated Voltage Regulators (FIVR) manufactured on a 22nm tri-gate CMOS process is presented. The PWM supports a wide operating frequency range of 20MHz- 320MHz, individually programmable phase angle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d97dc6a6195dffc2f8f6c6f3c1221f0f
https://doi.org/10.1109/mwscas.2019.8885345
https://doi.org/10.1109/mwscas.2019.8885345
Publikováno v:
IEEE Transactions on Magnetics. 45:4760-4766
A comparison of on-chip inductors with magnetic materials from previous studies is presented and examined. Results from on-chip inductors with magnetic material integrated into a 90 nm CMOS processes are presented. The inductors use copper metallizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c968987e7c6b099592616e4ee7e46add
https://doi.org/10.1109/tmag.2009.2030590
https://doi.org/10.1109/tmag.2009.2030590
Autor:
Greg Taylor, James W. Tschanz, Tanay Karnik, Peter Hazucha, Vivek De, Jianping Xu, Zuoguo Wu, Gerhard Schrom, Paolo Aseron, Mingwei Huang, Fabrice Paillet
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:61-68
The impedance of a microprocessor power-delivery network peaks at ~140 MHz, resulting in power-grid resonance, which lowers operating frequency and compromises gate oxide integrity. A suppression circuit is designed using an active-damping technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a46757508a5cbd26f3d91ff783426477
https://doi.org/10.1109/jssc.2007.913155
https://doi.org/10.1109/jssc.2007.913155
Autor:
Gerhard Schrom, Fabrice Paillet, Peter Hazucha, S. Rajapandian, Donald S. Gardner, Tanay Karnik, Sung Tae Moon
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:66-73
Integrated DC-DC converters switching above 100MHz dramatically reduce the footprint of the inductors and capacitors while improving droop response. Unfortunately, such converters utilize advanced digital CMOS processes with the maximum input voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39d3c8da0f361bb118bb7b567b8ff03e
https://doi.org/10.1109/jssc.2006.885060
https://doi.org/10.1109/jssc.2006.885060
Autor:
Nalamalpu Ankireddy, Fabrice Paillet, Chris Mozak, Gerhard Schrom, Nasser A. Kurd, Boyd Phelps, Ashish Khanna, Jonathan P. Douglas, Anant Deval
Publikováno v:
VLSIC
Intel Core™ M and 5th generation of Core™ processors (code named Broadwell) are fabricated on an optimized 14 nm process technology node resulting in a 49% reduction in feature-neutral die area. 14nm created a new optimized process flavor for Cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14307945f50dafb736f38a0028b68661
https://doi.org/10.1109/vlsic.2015.7231304
https://doi.org/10.1109/vlsic.2015.7231304
Autor:
Kaladhar Radhakrishnan, Michael J. Hill, Jonathan P. Douglas, William J. Lambert, Gerhard Schrom, Fabrice Paillet, Edward A. Burton
Publikováno v:
2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.
Intel's® 4th generation Core™ microprocessors are powered by Fully Integrated Voltage Regulators (FIVR). These 140 MHz multi-phase buck regulators are integrated into the 22nm processor die, and feature up to 80 MHz unity gain bandwidth, non-magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::149c4bd62c79bb6f3b9bfc3b5d33d689
https://doi.org/10.1109/apec.2014.6803344
https://doi.org/10.1109/apec.2014.6803344
Publikováno v:
IEEE Transactions on Magnetics. 43:2615-2617
On-chip inductors with 2 levels of magnetic material were integrated into an advanced 130-nm CMOS process to obtain over an order of magnitude increase in inductance (19times) and Q-factor (16times), significantly greater than prior values of les2.3t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3155474da2d725a9d064aac6f1251104
https://doi.org/10.1109/tmag.2007.893794
https://doi.org/10.1109/tmag.2007.893794
Publikováno v:
2011 IEEE Hot Chips 23 Symposium (HCS).
This article consists of a collection of slides from the author's conference presentation on the deployment of integrated inductors with magnetic materials for on-chip power conversion. Some of the specific topics discussed include: the special featu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75040a32b9005ed9edd6a7b07679ff64
https://doi.org/10.1109/hotchips.2011.7477481
https://doi.org/10.1109/hotchips.2011.7477481
Autor:
Tanay Karnik, Sung Tae Moon, Donald S. Gardner, K. Ikeda, G. Gellman, David Rennie, Gerhard Schrom, Fabrice Paillet, Peter Hazucha
Publikováno v:
ISQED
We propose a new bandgap reference topology for supply voltages as low as one diode drop (~0.8V). In conventional low-voltage references, supply voltage is limited by the generated reference voltage. Also, the proposed topology generates the referenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca65d66bbeb4f348c384b7dcb74060f7
https://doi.org/10.1109/isqed.2007.99
https://doi.org/10.1109/isqed.2007.99