Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Fabrice Oehler"'
Autor:
Anis Chiout, Cléophanie Brochard-Richard, Laetitia Marty, Nedjma Bendiab, Meng-Qiang Zhao, A. T. Charlie Johnson, Fabrice Oehler, Abdelkarim Ouerghi, Julien Chaste
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-8 (2023)
Abstract Nanomechanical resonators are built into phones, as filters or accelerometers, but they lack a knob to effectively tune the frequency at the nanoscale when it’s easy to tune on an octave the tone of a classical musical instrument like a gu
Externí odkaz:
https://doaj.org/article/3a5b107f274840918fd56e381dfb3e44
Autor:
Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer, Julien Chaste, César González, Yannick J. Dappe, François Bertran, Patrick Le Fèvre, Marco Pala, Fabrice Oehler, Jean-Christophe Girard, Abdelkarim Ouerghi
Publikováno v:
Physical Review Research, Vol 5, Iss 3, p 033152 (2023)
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in m
Externí odkaz:
https://doaj.org/article/a71f1219f8354af1a3233e3e2117e886
Autor:
Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pavel Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
Abstract In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show
Externí odkaz:
https://doaj.org/article/4f5cee023c774f3f8aba36b5f4a4d72c
Autor:
Cyrine Ernandes, Lama Khalil, Hugo Henck, Meng-Qiang Zhao, Julien Chaste, Fabrice Oehler, Alan T. Charlie Johnson, Maria C. Asensio, Debora Pierucci, Marco Pala, José Avila, Abdelkarim Ouerghi
Publikováno v:
Nanomaterials, Vol 11, Iss 11, p 2921 (2021)
The strain in hybrid van der Waals heterostructures, made of two distinct two-dimensional van der Waals materials, offers an interesting handle on their corresponding electronic band structure. Such strain can be engineered by changing the relative c
Externí odkaz:
https://doaj.org/article/1fbc42764e234c308f21edb50a5a95e8
Autor:
Lama Khalil, Debora Pierucci, Emilio Velez-Fort, José Avila, Céline Vergnaud, Pavel Dudin, Fabrice Oehler, Julien Chaste, Matthieu Jamet, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi
Publikováno v:
Nanotechnology
Nanotechnology, 2023, 34 (4), pp.045702. ⟨10.1088/1361-6528/ac9abe⟩
Nanotechnology, 2023, 34 (4), pp.045702. ⟨10.1088/1361-6528/ac9abe⟩
Nearly localized moiré flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9942f0591c0194a78c9e2b63fdf8dda
https://hal.science/hal-03864963/document
https://hal.science/hal-03864963/document
Autor:
Lama Khalil, Cyrine Ernandes, José Avila, Adrien Rousseau, Pavel Dudin, Nikolai D. Zhigadlo, Guillaume Cassabois, Bernard Gil, Fabrice Oehler, Julien Chaste, Abdelkarim Ouerghi
Publikováno v:
Nanoscale Advances.
In two dimensional materials, substitutional doping during growth can be used to alter the electronic properties.
Autor:
Capucine Tong, Amaury Delamarre, Romaric De Lépinau, Andrea Scaccabarozzi, Fabrice Oehler, Jean-Christophe Harmand, Stéphane Collin, Andrea Cattoni
Publikováno v:
Nanoscale. 14:12722-12735
GaAs/GaInP nanowire solar cells epitaxially grown on a patterned Si substrate feature state-of-the-art open circuit voltage (0.65 V) and quasi-Fermi level splitting (0.84 eV at 1 sun, 1.01 eV at 81 suns), indicating high optoelectronic quality.
Autor:
Dmytro Kundys, Danny Sutherland, Matthew J. Davies, Fabrice Oehler, James Griffiths, Philip Dawson, Menno J. Kappers, Colin J. Humphreys, Stefan Schulz, Fengzai Tang, Rachel A. Oliver
Publikováno v:
Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 736-743 (2016)
We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ($ 11\bar{2}0 $) a-plane and ($ 10\bar{1}0 $) m-plane free-standing bulk GaN substrates where the In content var
Externí odkaz:
https://doaj.org/article/e879bb8d4ef944b6835e4f12905089c1
Autor:
Lama Khalil, Pietro Maria Forcella, Geoffroy Kremer, Federico Bisti, Julien Chaste, Jean-Christophe Girard, Fabrice Oehler, Marco Pala, Jean-Francois Dayen, Demetrio Logoteta, Mark Goerbig, François Bertran, Patrick Le Fèvre, Emmanuel Lhuillier, Julien Rault, Debora Pierucci, Gianni Profeta, Abdelkarim Ouerghi
Publikováno v:
Physical Review B. 106
Autor:
Jihene, Zribi, Debora, Pierucci, Federico, Bisti, Biyuan, Zheng, José, Avila, Lama, Khalil, Cyrine, Ernandes, Julien, Chaste, Fabrice, Oehler, Marco, Pala, Thomas, Maroutian, Ilka, Hermes, Emmanuel, Lhuillier, Anlian, Pan, Abdelkarim, Ouerghi
Publikováno v:
Nanotechnology. 34(7)
Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device appli