Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Fabio Bussolotti"'
Autor:
Jing Yi Tee, Mark John, Wei Fu, Thathsara D. Maddumapatabandi, Fabio Bussolotti, Calvin Pei Yu Wong, Kuan Eng Johnson Goh
Publikováno v:
Advanced Physics Research, Vol 3, Iss 8, Pp n/a-n/a (2024)
Abstract The diverse morphologies of 2D transition metal dichalcogenides (2D TMDs) motivate their broad potential applications in the next generation of electronic, optical, and catalytic technologies. It is advantageous to develop controllable growt
Externí odkaz:
https://doaj.org/article/6f38a81719ff4872bc4f0ef3bc5de54c
Autor:
Fabio Bussolotti, Hiroyo Kawai, Ivan Verzhbitskiy, Wei Tao, Duc-Quan Ho, Anirban Das, Junxiang Jia, Shantanu Mukherjee, Bent Weber, Kuan Eng Johnson Goh
Publikováno v:
AIP Advances, Vol 13, Iss 3, Pp 035115-035115-6 (2023)
In this work, we present an angle-resolved photoemission spectroscopy study of a 1T′-WTe2 monolayer epitaxially grown on NbSe2 substrates, a prototypical quantum spin Hall insulator (QSHI)/superconductor heterojunction. Angle-resolved photoemission
Externí odkaz:
https://doaj.org/article/92c3c6ff589a4776ab4bb4e47654aa68
Autor:
Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman, Wei Fu, Sarthak Das, Fabio Bussolotti, Rainer Lee, Siew Lang Teo, Ding Huang, Ivan Verzhbitskiy, Zhuojun Jiang, Zhuoling Jiang, Jianwei Chai, Shi Wun Tong, Zi-En Ooi, Calvin Pei Yu Wong, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau
Publikováno v:
ACS Nano. 17:7929-7939
Publikováno v:
ACS Nano. 15:2686-2697
Making electrical contacts to semiconducting transition metal dichalcogenides (TMDCs) represents a major bottleneck for high device performance, often manifesting as strong Fermi level pinning and high contact resistance. Despite intense ongoing rese
Autor:
Wei Tao, Zheng Jue Tong, Anirban Das, Duc-Quan Ho, Yudai Sato, Masahiro Haze, Junxiang Jia, Yande Que, Fabio Bussolotti, K. E. Johnson Goh, BaoKai Wang, Hsin Lin, Arun Bansil, Shantanu Mukherjee, Yukio Hasegawa, Bent Weber
Publikováno v:
Physical Review B. 105
Autor:
Nobuo Ueno, Ryosuke Mori, Takahiro Ueba, Tino Kirchhuebel, Takashi Yamada, Shogo Kunieda, Torsten Fritz, Fabio Bussolotti, Ryo Shiraishi, Tobias Huempfner, Takuma Yamaguchi, Marco Gruenewald, Roman Forker, Satoshi Kera, Keiichirou Yonezawa, Toshiaki Munakata, Jinpeng Yang
Publikováno v:
The Journal of Physical Chemistry C. 124:19622-19638
Electronic devices based on organic semiconductors are a fast-growing field of technology. A detailed understanding of the interplay between optical and electronic properties of organic molecular t...
Autor:
Fabio Bussolotti, Jayce Jian Wei Cheng, Ming Yang, Jisheng Pan, Mohammad Tanhaei, Sing Yang Chiam, Yi Ren
Publikováno v:
Journal of Materials Chemistry A. 8:12576-12585
It is increasingly important to understand and study materials for removal of carbon dioxide (CO2) or other harmful gases for both industrial and commercial uses. In this work, we present pioneering work in studying how defects affect the sorption pe
Autor:
Chit Siong, Lau, Jing Yee, Chee, Liemao, Cao, Zi-En, Ooi, Shi Wun, Tong, Michel, Bosman, Fabio, Bussolotti, Tianqi, Deng, Gang, Wu, Shuo-Wang, Yang, Tong, Wang, Siew Lang, Teo, Calvin Pei Yu, Wong, Jian Wei, Chai, Li, Chen, Zhong Ming, Zhang, Kah-Wee, Ang, Yee Sin, Ang, Kuan Eng Johnson, Goh
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(25)
Temperature-dependent transport measurements are performed on the same set of chemical vapor deposition (CVD)-grown WS
Autor:
Chit Siong Lau, Jing Yee Chee, Liemao Cao, Zi‐En Ooi, Shi Wun Tong, Michel Bosman, Fabio Bussolotti, Tianqi Deng, Gang Wu, Shuo‐Wang Yang, Tong Wang, Siew Lang Teo, Calvin Pei Yu Wong, Jian Wei Chai, Li Chen, Zhong Ming Zhang, Kah‐Wee Ang, Yee Sin Ang, Kuan Eng Johnson Goh
Publikováno v:
Advanced Materials. 34:2270189
Publikováno v:
ACS nano. 15(2)
Making electrical contacts to semiconducting transition metal dichalcogenides (TMDCs) represents a major bottleneck for high device performance, often manifesting as strong Fermi level pinning and high contact resistance. Despite intense ongoing rese