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pro vyhledávání: '"Fabio Bersano"'
Publikováno v:
2020 IEEE International Ultrasonics Symposium (IUS).
This paper reports on the impact of Scandium doping on Microelectromechanical (MEM) Aluminum Nitride (AlN) Cross-sectional Lame Mode Resonators (CLMR) electromechanical coupling coefficient (k t 2). Three different device configurations exploiting bo
Autor:
Fabio Bersano, Franco De Palma, Fabian Oppliger, Floris Braakman, Ionut Radu, Pasquale Scarlino, Martino Poggio, Adrian Mihai Ionescu
In this work we explore the fabrication and experimental characterization of multi-gate FD-SOI devices that can operate both as single electron transistors (SETs) and MOSFETs. FD-SOI SET operation is achieved with electrostatically induced tunneling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a663dddad1416219e3aa918bc2d44ca5
https://infoscience.epfl.ch/record/298927
https://infoscience.epfl.ch/record/298927