Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Fabien Roze"'
Autor:
Toshiyuki Tabata, Fabien Roze, Pablo Acosta Alba, Sebastien Halty, Pierre-Edouard Raynal, Imen Karmous, Sebastien Kerdiles, Fulvio Mazzamuto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 712-719 (2022)
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable thermal budget is restricted. In this work, UV-LA is performed to regro
Externí odkaz:
https://doaj.org/article/15ed53d744e64e2db4b3d7275026dcce
Publikováno v:
ECS Transactions. 109:329-333
Ultra-violet (UV) laser annealing (LA) is a promising technology that is being investigated for next-generation CMOS processing. UV-LA’s unique capability of activating dopants very near to the surface due to the very shallow penetration depth can
Autor:
Imen Karmous, Toshiyuki Tabata, Sebastien Halty, Fabien Roze, Pablo Acosta Alba, Sebastien Kerdiles, Pierre-Edouard Raynal, Fulvio Mazzamuto
Publikováno v:
IEEE Journal of the Electron Devices Society
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable thermal budget is restricted. In this work, UV-LA is performed to regro
Autor:
Remi Demoulin, Richard Daubriac, Louis Thuries, Emmanuel Scheid, Fabien Roze, Fuccio Cristiano, Toshiyuki Tabata, Fulvio Mazzamuto
Publikováno v:
IEEE International Interconnect Technology Conference (IITC) 2022
IEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩
IEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩
The need of surface-localized thermal processing is strongly increasing especially w.r.t three-dimensionally (3D) integrated electrical devices. UV laser annealing (UV-LA) technology well addresses this challenge. Particularly UV-LA can reduce resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a0d093ec363e9185190be0328ba2b43
https://hal.laas.fr/hal-03795894
https://hal.laas.fr/hal-03795894
Autor:
Takeshi Nogami, Oleg Gluschenkov, Yasir Sulehria, Son Nguyen, Brown Peethala, Huai Huang, Hosadurga Shobha, Nick Lanzillo, Raghuveer Patlolla, Devika Sil, Andrew Simon, Daniel Edelstein, Nelson Felix, Junjun Liu, Toshiyuki Tabata, Fulvio Mazzamuto, Sebastien Halty, Fabien Roze, Yasutoshi Okuno, Akira Uedono
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Yoshihiro Mori, Louis Thuries, J. Liu, Sebastien Halty, Fulvio Mazzamuto, Karim Huet, Fabien Roze, Benoit Curvers, Joris Aubin, Toshiyuki Tabata
Publikováno v:
ECS Transactions. 89:137-153
Pulsed laser thermal annealing at the nanosecond timescale was successfully introduced into semiconductor devices manufacturing in the late 2000s for high volume manufacturing of sensitive 3D architectures such as vertical Si-based Insulated Gate Bip
Autor:
Sebastien Kerdiles, Pierre-Edouard Raynal, Fulvio Mazzamuto, Imen Karmous, Toshiyuki Tabata, Sebastien Halty, Pablo Acosta Alba, Fabien Roze
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b692471fe4f0b2856aa73cc36d776f61
Autor:
Antonito Contino, Toshiyuki Tabata, Stephane Lariviere, Fulvio Mazzamuto, Tokei Zsolt, Fabien Roze, N. Jourdan
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Increasing structural complexity in both 2D and 3D architectures and implementation of new materials in electronic devices is bringing severe limitations of thermal budget. In this context, UV nanosecond laser annealing (UV-NLA) is supposed to be a k
Publikováno v:
Applied Physics Express. 14:115503
Autor:
Fabien Roze, Sebastien Kerdiles, Toshiyuki Tabata, Imen Karmous, Pablo Acosta Alba, Karim Huet, Pierre-Edouard Raynal
Publikováno v:
ECS Meeting Abstracts. :1011-1011
UV nanosecond laser anneal (UV-NLA) is demonstrating clear benefits in emerging 3D-integration CMOS processes,1,2 where the allowed thermal budget is strictly limited to preserve underlying device performance. One of the major advantages of UV-NLA co