Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Fabien C-P. Massabuau"'
Autor:
Carla Maria Palomares Garcia, Angelo Di Bernardo, Graham Kimbell, Mary E. Vickers, Fabien C-P. Massabuau, Sachio Komori, Giorgio Divitini, Yuuki Yasui, Han Gyeol Lee, Jinkwon Kim, Bongju Kim, Mark G. Blamire, Antonio Vecchione, Rosalba Fittipaldi, Yoshiteru Maeno, Tae Won Noh, Jason W. A. Robinson
Publikováno v:
Communications Materials, Vol 1, Iss 1, Pp 1-8 (2020)
The pairing symmetry of superconducting Sr2RuO4 is debated, and analysis is complicated by difficulties in preparing high-quality thin films. Here, thin films of Sr2RuO4 are reproducibly grown by pulsed laser deposition with a Sr3Ru2O7 single crystal
Externí odkaz:
https://doaj.org/article/4598ab5e7df1459181e11a21b559b06b
Autor:
Fabien C.-P. Massabuau, Peter H. Griffin, Helen P. Springbett, Yingjun Liu, R. Vasant Kumar, Tongtong Zhu, Rachel A. Oliver
Publikováno v:
APL Materials, Vol 8, Iss 3, Pp 031115-031115-5 (2020)
Porosification of nitride semiconductors provides a new paradigm for advanced engineering of the properties of optoelectronic materials. Electrochemical etching creates porosity in doped layers while leaving undoped layers undamaged, allowing the rea
Externí odkaz:
https://doaj.org/article/dd6d3f824a7346ed9a95efae41250cf9
Autor:
Gunnar Kusch, Ella J. Comish, Kagiso Loeto, Simon Hammersley, Menno J. Kappers, Phil Dawson, Rachel A. Oliver, Fabien C.-P. Massabuau
Publikováno v:
Nanoscale. 14:402-409
Time-resolved cathodoluminescence offers new possibilities for the study of semiconductor nanostructures - including defects. The versatile combination of time, spatial, and spectral resolution of the technique can provide new insights into the physi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f60ed8a071aae13d78bb59697911fed0
https://doi.org/10.1039/d1nr06088k
https://doi.org/10.1039/d1nr06088k
Autor:
Fabien C.-P. Massabuau, Francesca Adams, David Nicol, John C. Jarman, Martin Frentrup, Joseph W. Roberts, Thomas J. O’Hanlon, Andras Kovács, Paul R. Chalker, R. A. Oliver
The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90a856508c2358c30ae556580d49c380
https://www.repository.cam.ac.uk/handle/1810/347363
https://www.repository.cam.ac.uk/handle/1810/347363
Publikováno v:
Materials
Nanoscale structure has a large effect on the optoelectronic properties of InGaN, a material vital for energy saving technologies such as light emitting diodes. Photoconductive atomic force microscopy (PC-AFM) provides a new way to investigate this e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7be6a261bc76a98cea2d73509d6f7227
https://pubmed.ncbi.nlm.nih.gov/30248899
https://pubmed.ncbi.nlm.nih.gov/30248899