Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Fabian Olbrich"'
Autor:
Fabian Olbrich, Matthias Paul, Peter Michler, Michael Jetter, Cornelius Nawrath, Simone Luca Portalupi
In the present work, the effect of resonant pumping schemes in improving the photon coherence is investigated on InAs/InGaAs/GaAs quantum dots emitting in the telecom C-band. The linewidths of transitions of multiple exemplary quantum dots are determ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ff5592cfea1a1df2faad05fbc80e8ce
Autor:
Frank Jahnke, Peter Michler, Jonatan Höschele, Cornelius Nawrath, Thorsten Mehrtens, Fabian Olbrich, B. Gerken, Jan Kettler, Andreas Rosenauer, Matthias Florian, Matthias Paul, S. Michael, Simone Luca Portalupi, Michael Jetter, Christian Carmesin, S. Schreier
Publikováno v:
Physical Review B. 98
Autor:
Manfred Berroth, Markus Wick, Fabian Olbrich, Michael Schlagmuller, Thomas Veigel, Helmut Fedder, Peter Michler, Steffen Oesterwind
Publikováno v:
ECOC
We showcase an optical random sampling scope that exploits single photon counting and apply it to characterize optical transceivers. We study single photon detectors with a jitter down to 40 ps. The method can be extended beyond 100 GHz.
Autor:
Matthias Paul, Fabian Olbrich, Jan Kettler, Jonatan Höschele, Peter Michler, Michael Jetter, Simone Luca Portalupi
Publikováno v:
Nanophotonics VII.
We report on the optical properties of recently developed telecom-wavelength quantum dots based on the GaAs material system. In order to achieve the InAs quantum dot wavelength shift towards the telecom C-band, strain-relaxation with the help of an I
Autor:
Fabian Olbrich, Jan Kettler, Michael Jetter, Fei Ding, Bianca Höfer, Jonatan Höschele, Oliver G. Schmidt, Simone Luca Portalupi, Peter Michler, Matthias Paul
Publikováno v:
AIP Advances
AIP Advances 9 (2019), Nr. 8
AIP Advances, Vol 9, Iss 8, Pp 085112-085112-6 (2019)
AIP Advances 9 (2019), Nr. 8
AIP Advances, Vol 9, Iss 8, Pp 085112-085112-6 (2019)
We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the optical quality or performance
Autor:
Matthias Florian, Fabian Olbrich, Matthias Paul, Katharina D. Zeuner, Jan Kettler, Michael Jetter, Christian Carmesin, Peter Michler, Frank Jahnke
Publikováno v:
Physical Review B. 94
We investigate the cascaded emission of photons from low-density InGaAs/GaAs quantum dots grown by metal-organic vapor-phase epitaxy that are intentionally redshifted toward telecommunication wavelengths. We observe multiple radiative cascades within
Autor:
Fabian Olbrich, Michael Jetter, Matthias Paul, Katharina D. Zeuner, Jan Kettler, Peter Michler
Publikováno v:
Applied Physics B. 122
InAs quantum dots grown on a GaAs substrate have been one of the most successful semiconductor material systems to demonstrate single-photon-based quantum optical phenomena. In this context, we present the feasibility to extend the low-temperature ph
Autor:
Fabian Olbrich, Cornelius Nawrath, Marc Sartison, Peter Michler, Michael Jetter, Simone Luca Portalupi, Stefan Hepp, Sascha Kolatschek, Lena Engel
Publikováno v:
Applied Physics Letters. 113:032103
In the present study, we report on the deterministic integration of quantum dots, emitting in the telecom O-band, into wet-chemically fabricated Gaussian-shaped microlenses which exhibit a surface quality comparable to epi-ready wafers. The slow wet-
Autor:
Jonatan Höschele, Jan Kettler, Peter Michler, Matthias Paul, Fabian Olbrich, Markus Müller, Simone Luca Portalupi, Michael Jetter
Publikováno v:
Applied Physics Letters. 111:133106
We demonstrate the emission of polarization-entangled photons from a single semiconductor quantum dot in the telecom C-band (1530 nm–1565 nm). To reach this telecommunication window, the well-established material system of InAs quantum dots embedde
Autor:
Jan Kettler, Matthias Paul, Fabian Olbrich, Susanne Schreier, Jonatan Höschele, Michael Jetter, Simone Luca Portalupi, Peter Michler
Publikováno v:
Applied Physics Letters. 111:033102
By metal-organic vapor-phase epitaxy, we have fabricated InAs quantum dots (QDs) on InGaAs/GaAs metamorphic buffer layers on a GaAs substrate with area densities that allow addressing single quantum dots. The photoluminescence emission from the quant