Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Fabian M. Bufler"'
Autor:
Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, Takeharu Goji Etoh
Publikováno v:
Sensors, Vol 20, Iss 23, p 6895 (2020)
The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate
Externí odkaz:
https://doaj.org/article/61a41ead702d434a9b9000e4d030a0f5
Publikováno v:
ESSDERC
In its standard formulation the drift-diffusion (DD) model frame cannot describe the influence of the ballistic resistance on the device characteristics. This results in considerable problems in calibrating the short channel behavior of advanced devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7804213a555025aa3127f36157537d69
https://doi.org/10.1109/essderc.2016.7599675
https://doi.org/10.1109/essderc.2016.7599675
Autor:
Veeresh Deshpande, Jean Fompeyrine, Eamon O'Connor, M. Frey, Lukas Czornomaz, Axel Erlebach, Daniele Caimi, Vladimir Djara, Fabian M. Bufler
Publikováno v:
2016 74th Annual Device Research Conference (DRC).
InGaAs devices are candidates to replace Si devices in future technology nodes due to their promising transport properties. Recently, CMOS-compatiple replacement metal gate (RMG) InGaAs-on-insulator (InGaAs-OI) FinFETs with record performance have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23afbda6fada478aae05333a441c5508
https://doi.org/10.1109/drc.2016.7548447
https://doi.org/10.1109/drc.2016.7548447
Publikováno v:
Journal of Computational Electronics. 6:23-26
In this work, a comprehensive method to obtain the impact ionization rate has been developed and applied to both strained and unstrained silicon. Special care was taken to find criteria which support the appropriateness of our choice of numerical met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::994d2e758c29c5a24a5973b4986a869e
https://doi.org/10.1007/s10825-006-0056-z
https://doi.org/10.1007/s10825-006-0056-z
Autor:
Fabian M. Bufler, Ralf Gautschi
Publikováno v:
ECS Transactions. 3:439-442
Stress engineering has become the major approach for performance enhancement of current CMOS technology. The first realized strained MOSFETs were fabricated by growing a thin Si layer on a SiGe substrate resulting into global biaxial tensile strain.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28853a9b4adafcd2a0a055bfee593ee9
https://doi.org/10.1149/1.2355841
https://doi.org/10.1149/1.2355841
Autor:
Fabian M. Bufler, Wolfgang Fichtner
Publikováno v:
IEEE Transactions on Electron Devices. 50:2461-2466
Self-consistent fullband Monte Carlo simulations based on nonlocal empirical pseudopotential band structures including spin-orbit splitting are employed to estimate the on-current in nanoscale strained-Si p-MOSFETs. Effective gate lengths from L/sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e495a64533109222aef3aa1f279d456
https://doi.org/10.1109/ted.2003.819655
https://doi.org/10.1109/ted.2003.819655
Publikováno v:
Journal of Computational Electronics. 2:81-84
Double-gate MOSFETs with gate lengths of 50 and 25 nm are theoretically analyzed by drift-diffusion (DD), hydrodynamic (HD) and self-consistent full-band Monte Carlo (MC) simulation. The underestimation of the on-current Ion by DD is found to be stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::442e8feaa244df25293da50a234e91d4
https://doi.org/10.1023/b:jcel.0000011403.57401.55
https://doi.org/10.1023/b:jcel.0000011403.57401.55
Publikováno v:
Mathematics and Computers in Simulation. 62:323-326
An explicit proof of a simple time-step propagation scheme is given in the framework of basic probability theory. It can be used in Monte Carlo simulations solving the Boltzmann transport equation. If the stochastically selected first scattering even
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d0cc3ac54dd63d2be4ae6e9530250f
https://doi.org/10.1016/s0378-4754(02)00220-3
https://doi.org/10.1016/s0378-4754(02)00220-3
Autor:
H. Yoshimura, Christoph Zechner, Fabian M. Bufler, Y. Asahi, Wolfgang Fichtner, Andreas Schenk
Publikováno v:
IEEE Transactions on Electron Devices. 50:418-424
The output characteristics of state-of-the-art n-MOSFETs with effective channel lengths of 40 and 60 nm have been measured and compared with full-band Monte Carlo simulations. The device structures are obtained by process simulation based on comprehe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39d77f125a71ef726b66418925e444d5
https://doi.org/10.1109/ted.2002.808420
https://doi.org/10.1109/ted.2002.808420
Autor:
Wolfgang Fichtner, Fabian M. Bufler
Publikováno v:
IEEE Transactions on Electron Devices. 50:278-284
The dependence of the strain-induced on-current improvement in n-MOSFETs on scaling and the crystallographic orientation of the channel is investigated by self-consistent full-band Monte Carlo simulation. For a channel orientation along the direction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::065b0e9a1d899a05eefa393cb94a0a12
https://doi.org/10.1109/ted.2002.808552
https://doi.org/10.1109/ted.2002.808552