Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Fabian J. Klüpfel"'
Autor:
Fabian J. Klupfel
Publikováno v:
IEEE Access, Vol 7, Pp 84053-84065 (2019)
Presented is a physics-based compact model for a silicon-nanopillar single-electron transistor (SET). Tunneling currents are calculated using a master equation approach with rates obtained via the transfer Hamiltonian formalism. The quantum confineme
Externí odkaz:
https://doaj.org/article/d5ca0c2b1f924a5899b7af7c8a1dfe1d
Autor:
Fabian J. Klupfel
Publikováno v:
IEEE Access, Vol 7, Pp 85855-85859 (2019)
The stacked nanowire field-effect transistor is an important option for future generations of CMOS technology. It features superior electrostatic control due to all-around gates while maintaining sufficient drive currents by stacking multiple channel
Externí odkaz:
https://doaj.org/article/8df9cb6903d14e279cb91a367fec5381
Publikováno v:
IEEE Transactions on Electron Devices. 67:855-862
Surface potential-based compact models are an essential link between circuit simulation and technology due to their physical base. Such models are particularly important for the development of devices and circuits based on new wide-bandgap semiconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a24bb64e631bad0237a7208676c94f8e
https://doi.org/10.1109/ted.2020.2967507
https://doi.org/10.1109/ted.2020.2967507
Publikováno v:
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
Carry out an electronic device/circuit at the scale of few nanometers usually implies a high level of uncertainty due to device variability along the fabrication process. In fact, hybrid SET-FET circuit can be extremely delicate in front of parasitic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be145483e4c3bb74a6b54fb44d6145f0
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365290
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365290
Autor:
Asen Asenov, Sylvain Barraud, Cristina Medina-Bailon, Fabian J. Klüpfel, Jurgen Lorenz, Vihar P. Georgiev, Tapas Dutta
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In the simulation framework for the study of aggressively scaled CMOS transistors, it is mandatory to capture the dependence of the model parameters on the physical structure of the devices in order to perform predictive device simulations. TCAD mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ba4a142fed4ddcdd11a48e463e1f637
https://doi.org/10.1109/sispad.2019.8870556
https://doi.org/10.1109/sispad.2019.8870556
Autor:
Liping Wang, Sebastien Martinie, Campbell Millar, Fabian J. Klüpfel, Olivier Rozeau, Binjie Cheng, Jean-Charles Barbe, Plamen Asenov, Andrew R. Brown, Jurgen Lorenz, Sylvain Barraud
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
A simulation flow for design-technology co-optimisation using 5nm stacked nanowires is presented. The effect of variation in key process parameters on the behaviour of benchmark circuits is examined through the use of variability-aware compact models
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d834c85ce45508d7d2aab94f413c6b23
https://doi.org/10.1109/sispad.2019.8870357
https://doi.org/10.1109/sispad.2019.8870357
Autor:
Fabian J. Klüpfel, Sylvain Barraud, Liping Wang, E. Bär, Jurgen Lorenz, Peter Evanschitzky, Andrew R. Brown
Publikováno v:
Micromachines
Micromachines, MDPI, 2019, 10 (1), pp.6. ⟨10.3390/mi10010006⟩
Micromachines, 2019, 10 (1), pp.6. ⟨10.3390/mi10010006⟩
Micromachines, Vol 10, Iss 1, p 6 (2018)
Volume 10
Issue 1
Micromachines, MDPI, 2019, 10 (1), pp.6. ⟨10.3390/mi10010006⟩
Micromachines, 2019, 10 (1), pp.6. ⟨10.3390/mi10010006⟩
Micromachines, Vol 10, Iss 1, p 6 (2018)
Volume 10
Issue 1
International audience; Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, employ truly three-dimensional architectures. Already for aggressively scaled bulk transistors, both statistical and systematic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be541b3a6c6d10316f9de799c963f12f
Publikováno v:
IEEE Transactions on Electron Devices
Quantum dots (QDs) can be used as conductive islands to build-up single-electron transistors (SETs). The characteristics of the QDs define the functional performance of the SETs. In consequence, analyzing the influence of the variations of QD dimensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3044e977e697709519502e83e9e41fe5
https://publica.fraunhofer.de/handle/publica/260801
https://publica.fraunhofer.de/handle/publica/260801
Autor:
Marius Grundmann, Fabian J. Klüpfel, Friedrich-Leonhard Schein, Holger von Wenckstern, Agnes Holtz
Publikováno v:
IEEE Transactions on Electron Devices. 62:4004-4008
We present integrated inverter circuits based on junction FETs (JFETs) with ZnO channels and amorphous ZnCo2O4 gate contacts. The inverters reach high gain values up to 276 and uncertainty ranges down to 0.3 V for an operating voltage of 3 V. The mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc3d05997df43166e9bdfc07f29ccb5
https://doi.org/10.1109/ted.2015.2493361
https://doi.org/10.1109/ted.2015.2493361
Autor:
Marius Grundmann, H. von Wenckstern, Michael Lorenz, Heiko Frenzel, Friedrich-Leonhard Schein, Fabian J. Klüpfel
Publikováno v:
IEEE Transactions on Electron Devices. 60:1828-1833
We compare key properties of zinc oxide (ZnO)-based junction field-effect transistors (JFETs), metal-semiconductor field-effect transistors (MESFETs), and metal-insulator-semiconductor field-effect transistors (MISFETs) prepared from a common ZnO:Mg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daf86acddde38935e598c25be0815a9f
https://doi.org/10.1109/ted.2013.2257173
https://doi.org/10.1109/ted.2013.2257173