Zobrazeno 1 - 10
of 101
pro vyhledávání: '"FUMIO MURAI"'
Autor:
Hiroya Ohta, Hajime Kawano, Hiroyuki Itoh, Hidetoshi Satoh, Jiro Yamamoto, Yasunari Sohda, Fumio Murai
Publikováno v:
Microelectronic Engineering. :78-86
This paper reviews and introduces recent methods for enhancing the performance of cell-projection lithography and describes various useful applications of this type of lithography. To increase the throughput, the area of the e-beam mask that is avail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e60efb419ed09875d6bdb14817862861
https://doi.org/10.1016/s0167-9317(03)00062-5
https://doi.org/10.1016/s0167-9317(03)00062-5
Autor:
Tomoyuki Ishii, Tokuo Kure, T. Sano, Fumio Murai, Kazuo Yano, Toshiyuki Mine, Takayuki Hashimoto, T. Kobayashi, Koichi Seki
Publikováno v:
Proceedings of the IEEE. 87:633-651
Starting with a brief review on the single-electron memory and its significance among various single-electron devices, this paper addresses the key issues which one inevitably encounters when one tries to achieve giga-to-tera bit memory integration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6463eb532ff918dffffb0bd30cc3d4d2
https://doi.org/10.1109/5.752519
https://doi.org/10.1109/5.752519
Autor:
Sonoko Migitaka, Michiaki Hashimoto, Fumio Murai, Kyoko Kojima, Hiroshi Shiraishi, Shou-ichi Uchino, Jiro Yamamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 11:555-563
Negative electron beam resists composed of a phenylcarbinol, poly(4-hydroxystyrene) (PHS), and an onium salt have been developed to define patterns below 100-nm. Five phenylcarbinols were evaluated as a precursor of a dissolution inhibitor (PDI) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2b75389ad091e9287c3a4949912a3ab
https://doi.org/10.2494/photopolymer.11.555
https://doi.org/10.2494/photopolymer.11.555
Autor:
Toshio Sakamizu, Tadasi Arai, Yasunori Suzuki, Kohji Katoh, Shou-ichi Uchino, Fumio Murai, Hiroshi Shiraishi
Publikováno v:
Journal of Photopolymer Science and Technology. 11:547-552
The effect of m/p-cresol novolak molecular-weight-distribution (MWD) and dissolution inhibitor structure on resist performance were investigated. A novolak resin richer in p-cresol ratio gave a large dissolution inhibition capability of polymeric dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b53ded3dfe13530b8c2f05d1fc3ac660
https://doi.org/10.2494/photopolymer.11.547
https://doi.org/10.2494/photopolymer.11.547
Autor:
Toshihiko Tanaka, Yumiko Oki, Norio Hasegawa, Katsuya Hayano, Tsuneo Terasawa, Fumio Murai, Akira Imai
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 79:73-83
A half-tone phase-shifting mask (HPM) is effective in improving resolution and focus latitude of an isolated hole pattern. HPM can be fabricated by the conventional method and a practical phase-shifting technique can be realized using HPM. The author
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::416b0f46db43355f8253d1d2c6785ac4
https://doi.org/10.1002/ecjb.4420790809
https://doi.org/10.1002/ecjb.4420790809
Autor:
Yoshiaki Ikenoue, Yasunori Suzuki, Yoshihiro Ohta, Tsutomu Tawa, Hideki Tomozawa, Yoshihiro Saida, Fumio Murai
Publikováno v:
Journal of Photopolymer Science and Technology. 9:707-714
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f932869043a0d94049b6fed58aefa3e
https://doi.org/10.2494/photopolymer.9.707
https://doi.org/10.2494/photopolymer.9.707
Autor:
Toshio Sakamizu, Keiko Hasegawa, Shinji Okazaki, Hajime Hayakawa, Hiroshi Shiraishi, Fumio Murai, Hidenori Yamaguchi
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 78:81-91
A single-layer resist process using a high resistivity positive resist by solubility reversal (PSR) for electron beam direct writing is described. Conventional PSR designed for mask creation is found to have inhomogeneous dissolution characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de8017af3f320431d96be1171b75aca6
https://doi.org/10.1002/ecjb.4420780809
https://doi.org/10.1002/ecjb.4420780809
Autor:
Ryo Nagai, Hiroki Yamashita, I. Shoji, Mayu Aoki, S. Iijima, Takashi Nishida, Masashi Horiguchi, T. Kisu, Eiji Takeda, Makoto Ohkura, Takeshi Sakata, Toshihiro Tanaka, Toru Kaga, Natsuki Yokoyama, Yasushi Gotoh, Y. Nakagome, T. Sekiguchi, Tanaka Haruhiko, E. Yamasaki, Shigeki Ueda, Fumio Murai
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:1165-1173
A distributed-column-control architecture is proposed to reduce the burst-mode cycle time of large-capacity DRAMs. It features independent operation of the I/O block and subarrays, eliminating the wiring delay in the internal buses from the longest p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08b388bbd4a5e8fdd460f95200a15991
https://doi.org/10.1109/4.475703
https://doi.org/10.1109/4.475703
Publikováno v:
IEEE Transactions on Electron Devices. 41:1831-1836
The influence of extremely shallow source and drain junctions on the short channel effects of Si MOSFET's are experimentally investigated. These extremely shallow junctions are realized in MOSFET's with a triple-gate structure. Two subgates formed as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f7dff8ae5476990e48ade4d75a5adfb
https://doi.org/10.1109/16.324595
https://doi.org/10.1109/16.324595
Publikováno v:
IEEE Transactions on Electron Devices. 41:1628-1638
This paper presents room-temperature operation, for the first time, of single-electron memory, in which one electron represents one bit of information. This is made possible by our new one-transistor memory configuration which has a very high charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba121837616a17e17f19ebe88112a7d7
https://doi.org/10.1109/16.310117
https://doi.org/10.1109/16.310117