Zobrazeno 1 - 10
of 4 829
pro vyhledávání: '"FILM GROWTH"'
Publikováno v:
Exploration, Vol 4, Iss 2, Pp n/a-n/a (2024)
Abstract Multi‐scale simulation is an important basis for constructing digital batteries to improve battery design and application. LiF‐rich solid electrolyte interphase (SEI) is experimentally proven to be crucial for the electrochemical perform
Externí odkaz:
https://doaj.org/article/b9c60946edda43c8a25a3b0989b04b4e
Autor:
H. Moreno-García, J.O. Sigala-Valdez, Ma del Rosario Martínez-Blanco, I. Cruz Reyes, S.M. Durón-Torres, I.L. Escalante-García, A. Del Rio-De Santiago
Publikováno v:
Heliyon, Vol 10, Iss 4, Pp e26703- (2024)
The crystallographic, optical, and electrical properties of manganese sulfide thin films depend on the control of the temperature precursors in the synthesis process, as shown by the results of this work. MnS thin films were deposited on glass substr
Externí odkaz:
https://doaj.org/article/1ee371765239436d9523707858e00ec8
Autor:
Joon-Ho Oh, Tae Kyung Lee, Ryoon Young Kim, Jeong-Ho An, Sung-In Mo, Ji-Eun Hong, Sun-Wook Kim, Min Jong Keum, Hee-eun Song, Ka-Hyun Kim
Publikováno v:
Small Structures, Vol 5, Iss 2, Pp n/a-n/a (2024)
Plasma‐assisted epitaxially grown silicon (plasma‐epi Si) is a new silicon‐based material with a tailorable nanostructure. Nanovoids can be introduced into plasma‐epi Si during growth, enabling the bottom‐up fabrication of porous Si for app
Externí odkaz:
https://doaj.org/article/3716ad8de36b40bbb3d416bf886bd57d
Autor:
Jungyu Shin, I. J. Lee
Publikováno v:
Polymers, Vol 16, Iss 11, p 1535 (2024)
The kinetic roughening of polymer films grown by vapor deposition polymerization was analyzed using the widely accepted classification framework of “generic scaling ansatz” given for the structure factor. Over the past two decades, this method ha
Externí odkaz:
https://doaj.org/article/84268d49d9cd4fdbb4c1856c201c13d5
Publikováno v:
Materials, Vol 17, Iss 10, p 2448 (2024)
Co-condensation of mixed SiGe nanoclusters and impingement of SiGe nanoclusters on a Si substrate were applied using molecular dynamics (MD) simulation in this study to mimic the fast epitaxial growth of SiGe/Si heterostructures under mesoplasma chem
Externí odkaz:
https://doaj.org/article/78fc156bbf6c4589ac11602bec10d78e
Autor:
Kwang Jae Lee, Xinyi Wen, Yusuke Nakazato, Jaeyi Chun, Maliha Noshin, Chuanzhe Meng, Srabanti Chowdhury
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
Embedding p-type gallium nitride (p-GaN) in AlxGa1-xN-based thin films has garnered significant interest as a versatile structure for bandgap engineering such as tunnel/super-junctions or current blocking/guiding functions in electronic devices. Howe
Externí odkaz:
https://doaj.org/article/ad6b0a812fda4f18af3e748be1d9a132
Decay estimate and blow-up for a fourth order parabolic equation modeling epitaxial thin film growth
Publikováno v:
AIMS Mathematics, Vol 8, Iss 5, Pp 11297-11311 (2023)
In this paper, we study a fourth order parabolic equation modeling epitaxial thin film growth. By using the potential well method and some inequality techniques, we obtain the decay estimate of weak solutions. Meanwhile, the blow-up time is estimated
Externí odkaz:
https://doaj.org/article/3df0b17d40094eeebb6bbc84c893ee91
Akademický článek
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Autor:
Sofia Drakopoulou, Mauro Murgia, Cristiano Albonetti, Simone Benaglia, Francesco Borgatti, Michele Di Lauro, Michele Bianchi, Pierpaolo Greco, David Papo, Ricardo Garcia, Andrea Alessandrini, Fabio Biscarini
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 10, Pp n/a-n/a (2023)
Abstract A growth mode of pentacene thin films deposited by high vacuum sublimation where the morphology versus thickness h “rings” back and forth between rough 3D films with pyramid islands and smooth 2D films with ziqqurat islands is discovered
Externí odkaz:
https://doaj.org/article/36b0c77ad0374c67a712913ef1ce383b
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 2, Iss 1, Pp 213-221 (2022)
Material informatics is being applied to crystal engineering, which is a core technology in electronics. Micrographs particularly provide important insights; however, they have not benefited significantly from material informatics because of the effo
Externí odkaz:
https://doaj.org/article/dce0e4b1778242e2868544a9099c3421