Zobrazeno 1 - 10
of 47
pro vyhledávání: '"F.R. Ladan"'
Publikováno v:
Physica C: Superconductivity. :558-561
An experimental study of the nonlinear effects in high temperature superconducting thin films, as a function of temperature and incident microwave power is performed. Three YBaCuO based coplanar resonators made by different techniques have been chara
Publikováno v:
Physica Status Solidi (a). 152:219-225
An application of surface enhanced Raman scattering (SERS) to the surface characterization of semiconductors is reported by evaporating an Ag island film onto the surface of the materials. The surface sensitivity of the Raman effect at the metal surf
Autor:
B. Blanc‐Guilhon, X. Q. Zhang, J.P. Contour, P. Bernstein, Stéphane Flament, J. Bok, J. F. Hamet, C. Dubuc, F.R. Ladan
Publikováno v:
Journal of Applied Physics. 76:2929-2936
We propose a mean field description of the phenomena occurring in superconducting thin film microbridges with low pinning forces when vortices are nucleated. This model allows for computation of the vortex velocity, the penetration depth, the critica
Publikováno v:
Solid-State Electronics. 37:1341-1344
The existence of an absolute photonic bandgap in the near-infrared for two-dimensional periodic dielectric structures is discussed for photons propagating in the plane of such 2D crystals. A special emphasis is put on the influence of the shape and s
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :177-182
We have demonstrated that adsorbed species on semiconductor surface can be detected by SERS (Surface Enhanced Raman Scattering) spectroscopy. We have observed the vibrations of adsorbed molecules on semiconductors, onto which we have evaporated a thi
Autor:
Bernard Sermage, D. Robein, L. L. Taylor, L. Birotheau, R. Azoulay, A. Izrael, J. Y. Marzin, L. Henry, F.R. Ladan, N. Roy, V. Thierry-Mieg, J. L. Benchimol
Publikováno v:
Surface Science. 267:253-256
We present low temperature optical data obtained on narrow quantum wires, fabricated with reactive ion etching and MOCVD overgrowth, in both In1−xGaxAs/InP and GaAs/Ga1−xAlxAs systems. One-dimensional quantum confinement effects are observed in b
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Publikováno v:
Physica C: Superconductivity. :1839-1840
The critical current density and the penetration depth of two YBCO lines are computed according to a model previously proposed [1] and the results are discussed
Publikováno v:
Physica C: Superconductivity. :3061-3062
The critical current densities across grain boundaries have been measured as a fonction of the in-plane crystallographic orientations of c-axis Y1Ba2Cu3O7 thin films grown on different lattice-mismatched substrates by inverted-cylindrical-magnetron s
Autor:
Bernard Sermage, J. L. Benchimol, L. Taylor, J. Y. Marzin, L. Birotheau, F.R. Ladan, V. Thierry-Mieg, A. Izrael, L. Henry, R. Azoulay, D. Robein
Publikováno v:
Japanese Journal of Applied Physics. 30:3256
We present the fabrication process of narrow quantum wires in both In1-x Ga x As/InP and GaAs/Ga1-x Al x As systems based upon e-beam lithography, lift-off, reactive ion etching and MOCVD overgrowth. The carrier lifetime, deduced from low temperature