Zobrazeno 1 - 10
of 22
pro vyhledávání: '"F.N. Sechi"'
Autor:
M. Bujatti, F.N. Sechi
Publikováno v:
2006 67th ARFTG Conference.
Microwave power amplifiers designed for instrumentation are characterized by a range of properties which sets them apart from other types of applications. Broad bandwidths are generally desired, and so are low noise (both in amplitude and phase), hig
Autor:
F.N. Sechi
Publikováno v:
MTT-S International Microwave Symposium Digest.
This session addresses the topic of improving the noise and the frequency stability of FET oscillators. These are important characteristics directly affecting the performance of devices in practical systems. Over the last decade numerous studies have
Publikováno v:
MTT-S International Microwave Symposium Digest.
A new technique for acquiring the temperature profile of microwave power transistors by infrared scanning has been developed. It provides for emissivity calibration using an infrared microscope interfaced with a computer.
Autor:
F.N. Sechi, M. Bujatti
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
A novel monolithic ceramic technology especially developed for high-power applications is proposed. Broadband power amplifiers based on this technology have demonstrated output powers in the range of 1-2 W over the 6-18-GHz frequency band, with good
Autor:
F.N. Sechi
Publikováno v:
IEEE Journal of Solid-State Circuits. 11:264-270
The linearity and efficiency of microwave amplifiers were improved by operating the active devices in a linearised class-B mode. Good linearity, i.e., low intermodulation distortion, derives from a cancellation effect of the intermodulation products.
Autor:
F.N. Sechi, R.L. Camisa
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:391-394
GaAs FET oscillators with flip-chip mounted devices in a novel common-drain configuration are described. It is shown how common-drain oscillators can achieve low thermal resistance while at the same time minimizing parasitics. It is also shown that b
Autor:
R.W. Paglione, F.N. Sechi
Publikováno v:
IEEE Journal of Solid-State Circuits. 12:285-290
Described here is the design and the electrical performance of a MESFET amplifier featuring an output power of 1 W with a gain of 34 dB over the frequency range from 4.4 to 5.0 GHz. The key elements that allowed the achievement of this performance we
Autor:
G.R. Basawapatna, C.H. Oxley, K.F. Schunemann, R. Curby, Fwu-Jih Hsu, T.T. Fong, R. Hayashi, M.S. Gupta, M. Ohmori, K. Yamamoto, J.J. Purcell, Y. Tajima, A.M. Howard, G. Pfund, R. Kawasaki, F.N. Sechi, R.L. Camisa, R.A. Kiehl, R.V. Garver, F.E. Gardiol, H. Tohyama, R.S. Tucker, J. Stevance, Chiung-Tung Li, K. Mishima, W.R. Wisseman, G. Cachier, J. Espaignol, R.L. Bernick, Y. Asano, T. Itoh, Y. Aono, G.I. Haddad, A. Azizi, H.J. Kuno, K. Behm, C. Sun, R. Aston, J.W. Gewartowski, J.V. DiLorenzo, C.P. Snapp, H. Abe, G.K. Montress, M.E. Elta, R. Allison, T. Takada, A.K. Talwar, H. Mizuno, H.T. Buscher, J.T.C. Chen, S.R. Mazumder, P.T. Chen, J.W. Tully, R.B. Stancliff, E. Benko, P.H. Wang, K.J. Russell, T.A. Midford
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:546-554
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