Zobrazeno 1 - 10
of 58
pro vyhledávání: '"F.M. Roche"'
Autor:
N. Shen, M. Maggio, I. Woods, M. C. Lowry, R. Almasri, C. Gorgun, K.F. Eichholz, E. Stavenschi, K. Hokamp, F.M. Roche, L. O’Driscoll, D.A. Hoey
Publikováno v:
Journal of Tissue Engineering, Vol 14 (2023)
Blood vessel formation is an important initial step for bone formation during development as well as during remodelling and repair in the adult skeleton. This results in a heavily vascularized tissue where endothelial cells and skeletal cells are con
Externí odkaz:
https://doaj.org/article/31a1d7ff590f4311959bc2dbed98c834
Autor:
N. Shen, M. Maggio, I. Woods, M. Lowry, K.F Eichholz, E. Stavenschi, K. Hokamp, F.M. Roche, L. O’Driscoll, D.A. Hoey
Blood vessel formation is an important initial step for bone formation during development as well as during remodelling and repair in the adult skeleton. This results in a heavily vascularized tissue where endothelial cells and skeletal cells are con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1473f5e503dde37584c3a8c109f0c8ab
https://doi.org/10.1101/2023.02.10.527969
https://doi.org/10.1101/2023.02.10.527969
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Akademický článek
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Autor:
L. Salager, F.M. Roche
Publikováno v:
IEEE Transactions on Nuclear Science. 43:3097-3102
This paper reports and discusses the experimental behavior of two inverter structures Rad-Hardened by Design to /sup 60/Co irradiation. We use the results on a set of basic circuits and transistors exposed to the same total doses as these structures
Autor:
S.D. Bocus, F.M. Roche
Publikováno v:
Microelectronic Engineering. 16:157-164
Experimental data showing the variations of the latchup sensitivity of CMOS integrated circuits in usual e-beam test conditions are reported in the present work. The results have been obtained on a basic cell fabricated in a 2 μm CMOS industrial tec
Publikováno v:
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).
The purpose of this work is to present how structural changes in the conventional Flash Analog to Digital Converter can secure it for a harsh radiation environment. The method consists in a coupling of two complementary techniques: a robust reconfigu
Publikováno v:
ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures.
A method allowing the easy determination of currents and capacitances of integrated structures in the femtoampere and femtofarad ranges, respectively, is developed. It involves some test structures and, as equipment, a standard transistor parameter a
Publikováno v:
RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.
The authors present experimental results showing the latchup sensitization of CMOS integrated circuits when subject to low energy electronic radiation. They emphasize the major role played by the incident electron dose and explain the mechanism throu
Publikováno v:
Proceedings of the 1991 International Conference on Microelectronic Test Structures.
A test structure dedicated to the evaluation of very low currents for MOS process characterization is presented. The device consists of an amplifier plus a bias voltage set implemented on the chip and connected to the leaky element. The principle is