Zobrazeno 1 - 10
of 106
pro vyhledávání: '"F.M. Klaassen"'
Autor:
J.A.M. Otten, F.M. Klaassen
Publikováno v:
IEEE Transactions on Electron Devices, 43(9), 1478-1488. Institute of Electrical and Electronics Engineers
A new measurement method is explained for the extraction of the source and drain series resistance of drain engineered MOSFETs from their low frequency ac characteristics as a function of gate and drain bias using only one single MOSFET. Experimental
Autor:
F.M. Klaassen, T. Smedes
Publikováno v:
Solid-State Electronics. 38:121-130
A new, analytical Non-Quasi-Static model, in terms of admittance parameters, for the small-signal behaviour of short channel MOSFETs is presented. The relevant short channel effects are included explicitly in the derivation of the model. The effects
Autor:
T. Smedes, F.M. Klaassen
Publikováno v:
Solid-State Electronics. 37:251-254
Recently, the role of the extrinsic parts of MOSFETs has become more and more important for the circuit behaviour. In this paper we discuss the effects of series resistances on the quasi-static behaviour of (submicron) MOSFETs. We present a simple me
Autor:
F.M. Klaassen, J.A.M. Otten
Publikováno v:
Microelectronic Engineering. 19:703-706
Though already much attention was paid to the gate-voltage dependence of the MOSFET series resistance [1] the behaviour of the drain series resistance as a function of drain bias could not be measured until now. In this paper a general measurement pr
Autor:
J.A.M. Otten, F.M. Klaassen
Publikováno v:
Microelectronic Engineering. 15:555-558
In short channel MOSFETs the effects of series resistance become increasingly important. In this paper the limitations of two existing series resistance measurement methods [1,2] will be discussed. Because of their limitations a new measurement metho
Autor:
R.M.D. Velghe, F.M. Klaassen
Publikováno v:
Microelectronic Engineering. 15:229-232
A good circuit-level model for well-scaled submicron MOSFETs is needed in circuit simulators to design integrated circuits with these transistors in an accurate way. Due to the scaling, thinner gate insulators are required and give rise to an increas
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A 0.5- mu m CMOS technology on ultrathin SIMOX SOI (silicon-on-insulator) material with silicon film thickness of 80 nm is studied. When compared with bulk devices the SOI NMOS devices showed a slightly reduced current-drive-capability, a small negat
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
Analog applications of MOS transistors in integrated circuits impose enhanced requirements on the compact MOS models used in circuit simulators. Here we present for the Philips MOS MODEL 9 the successful confrontation with these analog requirements,
Effects of the lightly doped drain configuration on capacitance characteristics of submicron MOSFETs
Autor:
F.M. Klaassen, T. Smedes
Publikováno v:
International Technical Digest on Electron Devices.
Measurements and simulations show that an LDD (lightly doped drain) configuration has a considerable effect on MOSFET capacitance characteristics. The effects have been included in a circuit-level capacitance model in an explicit form, avoiding the n
Autor:
R. van Langevelde, F.M. Klaassen
Publikováno v:
IEEE Transactions on Electron Devices, 44(11), 2044-2052. Institute of Electrical and Electronics Engineers
Compact MOSFET models in contemporary circuit simulators fail to accurately describe distortion effects. In the ohmic region of the MOSFET, this failure is mainly due to inaccurate modeling of the gate-field dependent mobility degradation effect. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0d8fb1c9ea29f20fc57de3065f093ae
https://research.tue.nl/nl/publications/6a5f312b-7633-4c72-8721-874f1d202d19
https://research.tue.nl/nl/publications/6a5f312b-7633-4c72-8721-874f1d202d19