Zobrazeno 1 - 10
of 53
pro vyhledávání: '"F.J. Schmuckle"'
Autor:
Viktor Krozer, Ralf Doerner, Maruf Hossain, Nils Weimann, Wolfgang Heinrich, Siddhartha Sinha, F.J. Schmuckle
Publikováno v:
IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 364-373 (2021)
Connecting chips within a module is a basic requirement in transforming MMIC performance to system functionality. More and more applications demand for operation at high mm-wave frequencies or with ultra-large bandwidth. While semiconductor devices h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8de4e4ec195b2fbf82334bc00ccd7cb
Autor:
Viktor Krozer, Wolfgang Heinrich, Nils Weimann, Sirinpa Monayakul, F.J. Schmuckle, S. Sinha, Michael Hrobak, Ralf Doerner
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:1215-1225
This paper presents the design and characterization of a broadband transition in the range dc to 500 GHz using the flip-chip concept. The extremely wideband performance is attained by optimizations in both process technology and electromagnetic desig
Autor:
Sirinpa Monayakul, Michael Hrobak, Ralf Doerner, S. Sinha, Olaf Krüger, Nils Weimann, Viktor Krozer, B. Janke, Wilfred John, D. Stoppel, F.J. Schmuckle, Wolfgang Heinrich
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 7:494-501
We developed a chip mounting technology suitable for low-cost assemblies in the 300–500-GHz frequency range, compatible with standard chip and submount fabrication techniques. The waveguide and transition designs are compatible with indium phosphid
Publikováno v:
2019 12th German Microwave Conference (GeMiC).
With increasing demand for miniaturization the requirements for packaging and system integration are more challenging especially when more and more components are to be integrated into a compact module. In such a situation, crosstalk effects and sign
Autor:
Ksenia Nosaeva, Viktor Krozer, B. Janke, Olaf Krüger, Matthias Rudolph, Thualfiqar Al-Sawaf, Nils Weimann, Dimitri Stoppel, W. Heinrich, Wilfred John, F.J. Schmuckle
Publikováno v:
IEEE Transactions on Electron Devices. 63:1846-1852
The RF power output of scaled subterahertz and terahertz indium phosphide double-heterostructure bipolar transistors (InP DHBTs) is limited by the thermal device resistance, which increases with the geometrical frequency scaling of these devices. We
Publikováno v:
2018 48th European Microwave Conference (EuMC).
On-wafer measurements at microwave and mmwave frequencies require reliable calibration processes to deduct unwanted effects such as the impact of probe, the wafer environment, and the instrumentation equipment itself. However, with increasing frequen
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
On-wafer measurements of a Device Under Test (DUT) can yield accurate results only if the properties of the measurement environment are well defined and unwanted effects can be removed from the data. This is commonly achieved through a calibration pr
Publikováno v:
2017 90th ARFTG Microwave Measurement Symposium (ARFTG).
In this paper we report on progress towards establishing traceability for fully calibrated on-wafer measurements of planar devices built in membrane technology. For the first time, we present a comprehensive uncertainty budget for on-wafer S-paramete
Publikováno v:
2017 47th European Microwave Conference (EuMC).
On-wafer measurements of any Device Under Test (DUT) usually require the application of a calibration algorithm to eliminate unwanted but unavoidable effects due to the probe tip properties, the probe pad, the neighboring structures on the wafer and
Publikováno v:
2017 89th ARFTG Microwave Measurement Conference (ARFTG).
When using multiline TRL calibrations for correcting on-wafer measurements, the accuracy of the result depends crucially on the consistency of the calibration set. For example, each line standard used in the calibration process must allow unambiguous