Zobrazeno 1 - 10
of 126
pro vyhledávání: '"F.J. Rosenbaum"'
Autor:
C.G. Parini, K.C. Mukherji, T.B. Vu, F.J. Rosenbaum, Said E. El-Khamy, E. Yamashita, A. Vander Vorst, J.A.G. Malherbe, Fred E. Gardiol, A.A.A. de Salles, W. Wiesbeck, V. Shugerov, Y. Mao, J. Shapira
Publikováno v:
IEEE Transactions on Education. 33:22-34
Thirteen respondents describe the mechanics and reflect on the environment of teaching electromagnetics in their respective countries. A brief description of the survey by F.J. Rosenbaum is followed by the 13 individual presentations, whose titles ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feb4d69ac3f144bd604de9c63d12d730
https://doi.org/10.1109/13.53624
https://doi.org/10.1109/13.53624
Autor:
R.J. Gilmore, F.J. Rosenbaum
Publikováno v:
MTT-S International Microwave Symposium Digest.
A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b3d2f71e67d2491274c469dec65c8ef
https://doi.org/10.1109/mwsym.1983.1130884
https://doi.org/10.1109/mwsym.1983.1130884
Publikováno v:
MTT-S International Microwave Symposium Digest.
A new metal-semiconductor device is reported whose I-V characteristic is controlled by a geometric gap between adjacent Schottky barrier regions. An improved performance low turn-on votlage GaAs diode is demonstrated at 10 through 70 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79c4561abf58cdc6b64ce7ab3337a166
https://doi.org/10.1109/mwsym.1982.1130596
https://doi.org/10.1109/mwsym.1982.1130596
Autor:
A. Madjar, F.J. Rosenbaum
Publikováno v:
MTT-S International Microwave Symposium Digest.
An AC large-signal model for the GaAs FET is presented. It incorporates the device geometry and semiconductor properties and relates the terminal currents to the instantaneous applied voltages and their derivatives. Its form is suitable for large-sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f9c241ee0d46b790aea0508626efc76
https://doi.org/10.1109/mwsym.1979.1124081
https://doi.org/10.1109/mwsym.1979.1124081
Autor:
F.J. Rosenbaum, R.J. Gilmore
Publikováno v:
MTT-S International Microwave Symposium Digest.
A modified harmonic balance approach is applied to a GaAs FET model to simulate two-tone intermodulation distortion and multiple siqnal suppression in MESFET amplifiers and mixers. Experimental results of a single stage FET amplifier are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4ed77d1a8898e88b67a833fe4af2266
https://doi.org/10.1109/mwsym.1984.1131818
https://doi.org/10.1109/mwsym.1984.1131818
Autor:
F.J. Rosenbaum
Publikováno v:
S-MTT International Microwave Symposium Digest.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fde4273f9543e7fef3ec5eec5b0ec8b
https://doi.org/10.1109/mwsym.1974.1123616
https://doi.org/10.1109/mwsym.1974.1123616
Publikováno v:
MTT-S International Microwave Symposium Digest.
Using a large-signal computer model for the MESFET with a modified harmonic balance technique the third-order intermodulation response of general amplifier circuits is found. The effect of device, bias, and impedance changes is investigated and compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca3c27aebbdb7a19e6aeca08bfa4a01
https://doi.org/10.1109/mwsym.1985.1131998
https://doi.org/10.1109/mwsym.1985.1131998
Autor:
R. Sachs, F.J. Rosenbaum
Publikováno v:
1988., IEEE MTT-S International Microwave Symposium Digest.
A material body with complex constitutive parameter values mu and epsilon located in a stripline, partially filling it, represents a 3-D scattering problem. This problem is solved by the reaction method, yielding the configuration's scattering parame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c22b768b0d2b5706fa9d429f15a4ac02
https://doi.org/10.1109/mwsym.1988.22050
https://doi.org/10.1109/mwsym.1988.22050
Publikováno v:
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.
The design and performance of an MMIC (monolithic microwave integrated circuit) active bandpass filter based on a twin-tee notch circuit are described. Design goals included a center frequency of 2 GHz and a Q that could be varied to well over 100. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479ff439cd88c190af975e8926e8dad0
https://doi.org/10.1109/mcs.1993.247453
https://doi.org/10.1109/mcs.1993.247453
Autor:
F.J. Rosenbaum, Y.S. Wu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 22:849-856
Octave bandwidth operation of Y-junction stripline and microstrip circulators is predicted using Bosma's Green's function analysis. The width of the coupling transmission lines is found to be a significant design parameter. Theoretical and experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec7b047a4a779a0e9ab65d9b02ee5419
https://doi.org/10.1109/tmtt.1974.1128363
https://doi.org/10.1109/tmtt.1974.1128363