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pro vyhledávání: '"F.J. Prockyk"'
Autor:
F.J. Prockyk, M.G. Mound, A.W. Yanof, K.J. Dimmler, J.M. Cassard, A.C. Dumbri, C.A. Benevit, W. Rosenzweig
Publikováno v:
IEEE Journal of Solid-State Circuits. 17:857-862
A 5 V 256K/spl times/1 bit NMOS dynamic RAM employing redundancy is described. Using 2.3 /spl mu/m design rules, the cell is laid out in a folded bit line configuration having a row pitch of 6.5 /spl mu/m and a sense-amplifier pitch of 18 /spl mu/m.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::552b7bd476fc075ac74e2e4220a07e6b
https://doi.org/10.1109/jssc.1982.1051831
https://doi.org/10.1109/jssc.1982.1051831
