Zobrazeno 1 - 10
of 26
pro vyhledávání: '"F.I. Barro"'
Publikováno v:
Revue des Énergies Renouvelables, Vol 14, Iss 4, Pp 649 – 664-649 – 664 (2011)
Dans cet article, nous présentons une modélisation à 3 dimensions de l’influence de la taille de grains, de la vitesse de recombinaison aux joints de grain et du champ électrique de gradient de concentration sur la distributions des porteurs de
Externí odkaz:
https://doaj.org/article/7c357d68c33042ea85aa5eb77dfa610e
Publikováno v:
International Journal of Emerging Technology and Advanced Engineering. 11:1-7
The aim of this work is to present a study of the recombination velocities at the junction initiating the shortcircuit (Sfsc) and limiting the open circuit (Sfoc) of a silicon solar cell under magnetic field in the static regime. From the continuity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f7fe7bdc9212f9ff3f12ddcea5a8667
https://doi.org/10.46338/ijetae0221_02
https://doi.org/10.46338/ijetae0221_02
Publikováno v:
Open Journal of Applied Sciences. 11:202-215
The Cascaded Connected Single Switch Quadratic Boost (C2S2-QB) is studied first from its ideal model, then with semi-real model taking into account resistive losses through the inductors and the capacitor. The continuous conduction mode equations, de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc216d2111e0376317a63feff05ef724
https://doi.org/10.4236/ojapps.2021.112014
https://doi.org/10.4236/ojapps.2021.112014
Akademický článek
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Publikováno v:
Energy and Power Engineering. 10:399-413
A theoretical study of a conventional boost converter is presented. Based on the real behavior of the components, two models of the boost converter are introduced: one dealing only with losses through inductor and capacitor and another taking into ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccc14509af3796fd391dc73420d26cef
https://doi.org/10.4236/epe.2018.109025
https://doi.org/10.4236/epe.2018.109025
Publikováno v:
Journal de Physique de la SOAPHYS. 2:C20A28-1
A theoretical and experimental study of a conventional boost converter is presented. Based on the real behavior of the components, the conventional boost converter model dealing with both inductive and capacitive losses as well as switching losses is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b47b1e089d1a4c30fb15fe20c8b759
https://doi.org/10.46411/jpsoaphys.2020.02.28
https://doi.org/10.46411/jpsoaphys.2020.02.28
Autor:
Adem Kocyigit, F.I. Barro, Gökhan Şahin, Genber Kerimli, Moustapha Sane, Prince Abdoul Aziz Honadia
Publikováno v:
Chinese Journal of Physics. 55:203-210
This paper investigates theoretically the performance of conversion efficiency of a bifacial silicon solar cell with particle irradiation. The bifaciality coefficient and the conversion efficiency are calculated for various rear side illumination con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c928aad6259cfc5a5b4f1974d1e2729e
https://doi.org/10.1016/j.cjph.2016.10.018
https://doi.org/10.1016/j.cjph.2016.10.018
Publikováno v:
Results in Physics, Vol 7, Iss, Pp 4264-4268 (2017)
In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and ser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34ce366c4f12570df08744de8977cf08
http://www.sciencedirect.com/science/article/pii/S2211379717313669
http://www.sciencedirect.com/science/article/pii/S2211379717313669
Publikováno v:
British Journal of Applied Science & Technology. 7:610-618
In this paper, we are investigating theoretically the behavior of a bifacial silicon solar cell in steady state with different illumination conditions. The bifaciality coefficient and the conversion efficiency are calculated for various rear side ill
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8728815fc34f5a887e9d878989d0b1d9
https://doi.org/10.9734/bjast/2015/15628
https://doi.org/10.9734/bjast/2015/15628
Publikováno v:
Volume: 39, Issue: 2 122-127
Turkish Journal of Physics
Turkish Journal of Physics
In this work, an analytical approach is presented for modeling the capacitance of crystalline silicon solar cells. Based on a one-dimensional modeling of the cell, the excess minority carrier density, the photovoltage, and the capacitance are calcula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::047b078b52c00ac036b9c80c995e35b5
https://dergipark.org.tr/tr/pub/tbtkphysics/issue/12488/150428
https://dergipark.org.tr/tr/pub/tbtkphysics/issue/12488/150428
