Zobrazeno 1 - 10
of 34
pro vyhledávání: '"F.H. Ruddell"'
Autor:
Krzysztof Kucharski, H. Niemiec, Piotr Grabiec, M. Sapor, F.H. Ruddell, B.W. Loster, B.M. Armstrong, S. Majewski, Wojciech Kucewicz, Harold Gamble, T. Kusiak, Jacek Marczewski, Daniel Tomaszewski
Publikováno v:
IEEE Transactions on Nuclear Science. 57:381-386
Monolithic active pixel detectors fabricated in SOI (silicon on insulator) technology are novel sensors of ionizing radiation which exploit SOI substrates for the integration of readout electronics with a pixel detector. The fully-depleted sensing di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c4ea6b13d2a82ec469ef490680d4ec6
https://doi.org/10.1109/tns.2009.2036435
https://doi.org/10.1109/tns.2009.2036435
Autor:
B.M. Armstrong, S.J.N. Mitchell, Haydn Wadsworth, Harold Gamble, Paul Rainey, Y.H. Low, David McNeill, F.H. Ruddell, Paul Baine
Publikováno v:
International Journal of High Speed Electronics and Systems. 18:805-814
This paper explores the potential of germanium on sapphire (GeOS) wafers as a universal substrate for System on a Chip (SOC), mm wave integrated circuits (MMICs) and optical imagers. Ge has a lattice constant close to that of GaAs enabling epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4811a14bd099ce0882ae0bba2cf77f07
https://doi.org/10.1142/s0129156408005783
https://doi.org/10.1142/s0129156408005783
Autor:
B.M. Armstrong, J.H. Montgomery, F.H. Ruddell, S.J.N. Mitchell, Paul Rainey, Paul Baine, Harold Gamble, Y.H. Low, Y.W. Low, David McNeill
Publikováno v:
Materials Science in Semiconductor Processing. 11:195-198
Germanium on sapphire (GeOS) is proposed for system on a chip applications. Sapphire substrates are demonstrated to exhibit lower rf losses and superior crosstalk suppression compared with oxidised silicon handle wafers. Inductors on sapphire also sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdd4f72f8643b8ec798ad80420a784cb
https://doi.org/10.1016/j.mssp.2008.09.011
https://doi.org/10.1016/j.mssp.2008.09.011
Autor:
B.M. Armstrong, S. Bhattacharya, F.H. Ruddell, Neil Mitchell, Haydn Wadsworth, David McNeill, Harold Gamble, Donal Denvir
Publikováno v:
ECS Transactions. 3:531-537
Germanium MOS capacitors have been fabricated with a high-κ HfO2 dielectric using ALD. An in-situ low temperature (250ºC) nitrogen plasma treatment on the germanium surface prior to the deposition of HfO2 was found to be beneficial to the electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c20aec7312d287e017f9cf0966aa60
https://doi.org/10.1149/1.2355850
https://doi.org/10.1149/1.2355850
Autor:
B.M. Armstrong, S. Bhattacharya, Haydn Wadsworth, David McNeill, D. Denvir, F.H. Ruddell, Harold Gamble
Publikováno v:
Materials Science in Semiconductor Processing. 9:685-689
Germanium (Ge) does not grow a suitable oxide for MOS devices. The Ge/dielectric interface is of prime importance to the operation of photo-detectors and scaled MOSTs. Therefore there is a requirement for deposited or bonded dielectric materials. MOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a80cea522cefaffbda2d20ae4a126b2
https://doi.org/10.1016/j.mssp.2006.08.052
https://doi.org/10.1016/j.mssp.2006.08.052
Publikováno v:
IEEE Transactions on Electron Devices. 52:1384-1391
The design and simulation of a novel silicon Schottky diode for nonlinear transmission line (NLTL) applications is discussed in this paper. The Schottky diode was fabricated on a novel silicon-on-silicide-on-insulator (SSOI) substrate for minimized s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::504ed00347fbc807d25c4cae8cb58f20
https://doi.org/10.1109/ted.2005.850684
https://doi.org/10.1109/ted.2005.850684
Publikováno v:
Journal of Materials Processing Technology. 33:481-492
This paper describes a custom-built rapid thermal chemical vapour deposition system developed to allow the growth of silicon and silicon carbide at low pressure and with minimal thermal budget. The reactor uses tungsten-halogen lamps to heat the sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc83ef4f190564a4877c7ca2b0814f2
https://doi.org/10.1016/0924-0136(92)90281-v
https://doi.org/10.1016/0924-0136(92)90281-v
Autor:
T. J. V. Bowcock, B.M. Armstrong, F.H. Ruddell, Jacek Marczewski, Harold Gamble, M. Bain, Krzysztof Kucharski, P. P. Allport, Gianluigi Casse, H. Niemiec, J.H. Montgomery, Suli Suder, Daniel Tomaszewski, Wojciech Kucewicz, Donal Denvir
Publikováno v:
Armstrong, M, Suder, S, Bain, M, Montgomery, J, Gamble, H, Ruddell, F, Denvir, D, Casse, G, Bowcock, T, Allpprt, P P, Marczewski, J, Kucharski, K, Tomaszewski, D, Niemec, H & Kucewicz, W 2008, ' Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors ' SOLID-STATE ELECTRONICS, vol 52, no. 12, pp. 1849-1853 .
Silicon on Insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1c7359e917a25b1df04b046d0c4116a
https://pure.qub.ac.uk/portal/en/publications/fabrication-and-characterisation-of-high-resistivity-soi-substrates-for-monolithic-high-energy-physics-detectors(eb85f4d0-051d-43f3-a288-eed867b84c04).html
https://pure.qub.ac.uk/portal/en/publications/fabrication-and-characterisation-of-high-resistivity-soi-substrates-for-monolithic-high-energy-physics-detectors(eb85f4d0-051d-43f3-a288-eed867b84c04).html
Autor:
Wojciech Maziarz, H. Niemiec, Daniel Tomaszewski, B.M. Armstrong, Piotr Grabiec, M. Sapor, Harold Gamble, F.H. Ruddell, Jacek Marczewski, Krzysztof Kucharski, Wojciech Kucewicz
Publikováno v:
2008 IEEE Nuclear Science Symposium Conference Record.
Monolithic active pixel detectors fabricated in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. The fully depleted sensing di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d987e75f9c227e087047711846fdb2f5
https://doi.org/10.1109/nssmic.2008.4774598
https://doi.org/10.1109/nssmic.2008.4774598
Autor:
P. P. Allport, Gianluigi Casse, J.H. Montgomery, T. J. V. Bowcock, Harold Gamble, Suli Suder, B.M. Armstrong, F.H. Ruddell
Publikováno v:
2008 IEEE International Conference on Microelectronic Test Structures.
SOI substrates are important for the fabrication of monolithic active pixel high energy physics particle detectors. In this work, self-aligned circular geometry MOS transistor test structures were fabricated on ion split, bonded SOI substrates to eva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::007112e1e4c8fbce10746ecf477d76c0
https://doi.org/10.1109/icmts.2008.4509322
https://doi.org/10.1109/icmts.2008.4509322