Zobrazeno 1 - 10
of 42
pro vyhledávání: '"F.H. Doerbeck"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
Performance results and design considerations are presented for an all solid-state power amplifier suitable for spacecraft transmitter applications. Design emphasis is placed on high power, high efficiency and high reliability operation, as well as o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edcfe405cd448499a80e1632a1380032
https://doi.org/10.1109/mwsym.1979.1124113
https://doi.org/10.1109/mwsym.1979.1124113
Autor:
M.H. Gibson, Robert E. Horn, Anand Gopinath, P.J. Meier, S.G. Pintzos, D.J. Coleman, Harold Jacobs, J.P. Bolloch, J.A. Paul, S.D. Shamasundara, S. Shindo, C.D. Gupta, Z. Paunovic, Tatsuo Itoh, E. Freibergs, M.-T. Cotte, S. Pavlin, A. Presser, W.R. Wisseman, Y. Konishi, Jr. Yu-Wen Chang, C. Thebault, S. Kamihashi, I. Thomson, Hua Quen Tserng, T. Takada, B.M. Neale, K.L. Klohn, R. Schnitzler, D.W. Shaw, Reinhold Pregla, J.-J. Guena, J.-P. Ramy, T.E. Rozzi, Martin Victor Schneider, T. Itanami, Y. Tajima, T.F. McMaster, F.H. Doerbeck, K. Solbach, R.H. Knerr, Darko Kajfez, M. Hirayama, A.S. Hebert, K.C. Gupta, E.R. Carlson
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 26:836-842
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e45c42239d5f64d83699f7389ef08f8
https://doi.org/10.1109/tmtt.1978.1129496
https://doi.org/10.1109/tmtt.1978.1129496
Publikováno v:
IEEE Transactions on Electron Devices. 27:467-471
The results of recent 15-GHz measurements on GaAs power FET's are described. The microwave performance has been determined as a function of epitaxial doping level and thickness, gate recess depth, gate finger width, and source-drain spacing. The opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83347cc97804252629248424d70d62d7
https://doi.org/10.1109/t-ed.1980.19885
https://doi.org/10.1109/t-ed.1980.19885
Autor:
J.E. Kenney, M.R. Namordi, M.D. Rubin, T. Ueda, A. Nara, I. Uchizaki, J.J. Whalen, C.L. Cuccia, J.W. Amoss, V.A. Monaco, V. Sokolov, G.D. Alley, R.D. Hess, P.L. Fleming, E.W. Matthews, S. Hori, M.C. Calcatera, H.L. Thal, A. Ballato, S.K. Salmon, T. Susuki, J.M. Borrego, H.E. Carlson, M.L. Thorn, T. Ishii, T. Smith, M. Nakatani, E.T. Harkless, A.R. Kerr, D.N. Zuckerman, K. Yoshinobu, N. Tomita, E.C. Niehenke, Bang-Sup Song, C.A. Hoer, Y. Oda, C. Tsironis, C. Naldi, U. Niggebrugge, T.J. Lukaszek, F.H. Doerbeck, Han-chiu Wang, E.J. Walsh, K. Atsuki, R.J. Gutmann, G.N. Hill, W.A. Cox, E.A. Uliana, F. Fillicori, C.T. Rucker, G.F. Engen, S.E. Sussman-Fort, E. Yamashita, T. Itoh
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:1093-1098
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97cac3e9434c8287b562f02b7e3052da
https://doi.org/10.1109/tmtt.1979.1129796
https://doi.org/10.1109/tmtt.1979.1129796
Publikováno v:
Journal of Vacuum Science and Technology. 15:965-968
High‐performance GaAs FET’s with nominal gate lengths of 0.5, 0.75, and 1.0 μm have been fabricated with electron‐beam‐lithography techniques. A hybrid process was developed which only required e‐beam definition of the critical gate level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b30ae397ce96df7730f9a5508aca0df
https://doi.org/10.1116/1.569686
https://doi.org/10.1116/1.569686
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:1058-1065
Performance results and design considerations are presented for an all solid-state Ku-band power amplifier which is feasible for use in PM communication systems for airborne or spacecraft transmitter applications. Design emphasis is placed on high po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995df01cc386412369239214d0d6a2bc
https://doi.org/10.1109/tmtt.1979.1129791
https://doi.org/10.1109/tmtt.1979.1129791
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 26:774-778
Multiple-mesa GaAs Read diodes have been incorporated in a single-stage microstrip amplifier module at X band. Stable CW amplification with an output power of 12 W at 4-dB gain and 23.5-percent power-added efficiency has been demonstrated. Design con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1e6b1122e93a4c2245368b280356aa
https://doi.org/10.1109/tmtt.1978.1129485
https://doi.org/10.1109/tmtt.1978.1129485
Publikováno v:
IEEE Transactions on Electron Devices. 26:1074-1080
The fabrication and first successful operation of Ge/GaAs heterojunction IMPATT's are described. Theoretical analyses were employed to establish the optimum materials specifications for maximum microwave performance. The analyses revealed that the he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bf181e8e7dafb453b61f3312df7d296
https://doi.org/10.1109/t-ed.1979.19548
https://doi.org/10.1109/t-ed.1979.19548
Publikováno v:
1.
The design and fabrication of a 9-10GHz MIC three-stage GaAs FET amplifier module will be described. An output power of 1.6W with 20dB gain and 28% efficiency has been achieved.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74bb4c7fa08fb834fd84ba03e2b5a415
https://doi.org/10.1109/isscc.1978.1155870
https://doi.org/10.1109/isscc.1978.1155870
Autor:
R. Pitts, W.C. Holton, F.H. Doerbeck, R.W. Gooch, W.G. Manns, M.R. Namordi, J.E. Gunther, D.F. Weirauch, K.H. Surtani, W.C. Scott
Publikováno v:
1977 International Electron Devices Meeting.
A thin profile (two-inch depth) digitally addressed cathodoluminescent display has been developed which is capable of presenting 1920 alphanumeric 5 × 9 dot matrix characters at a spot brightness of 500 ft-L. Multilevel addressing techniques permit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1b5765a2bd48a09288bf7c01bf3e4dd
https://doi.org/10.1109/iedm.1977.189167
https://doi.org/10.1109/iedm.1977.189167