Zobrazeno 1 - 10
of 94
pro vyhledávání: '"F.C.M.J.M. van Delft"'
Publikováno v:
Biosensors and Bioelectronics. 123:251-259
Continuous improvements of the fluorescence-based sensitivity and specificity, required for high throughput screening, diagnostics, and molecular biology studies, are usually addressed by better readout systems, or better reporting elements. However,
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Publikováno v:
Microelectronic Engineering. 85:1004-1009
Image reversal methods can be useful in those cases, where a resist of a specific tone is lacking particular desirable properties, e.g. etch resistance. Reversal of the image, e-beam written in Hydrogen SilsesQuioxane (HSQ), by a proper 'work around'
Autor:
X. F. Walboomers, W. A. Loesberg, J. te Riet, J.J.W.A. van Loon, Peter Schön, John A. Jansen, Carl G. Figdor, Sylvia Speller, F.C.M.J.M. van Delft, F.C. van den Heuvel
Publikováno v:
Microelectronic Engineering, 85, 1362-1366
Microelectronic Engineering, 85, 5-6, pp. 1362-1366
Microelectronic Engineering, 85(5-6), 1362-1366. Elsevier
Microelectronic engineering, 85(5-6), 1362-1366. Elsevier
Delft, F C M J M, van den Heuvel, F C, Loesberg, W A, te Riet, J, Schön, P, Figdor, C G, Speller, S, van Loon, J J W A, Walboomers, X F & Jansen, J A 2008, ' Manufacturing substrate nano-grooves for studying cell alignment and adhesion ', Microelectronic engineering, vol. 85, no. 5-6, pp. 1362-1366 . https://doi.org/10.1016/j.mee.2008.01.028
Microelectronic Engineering, 85, 5-6, pp. 1362-1366
Microelectronic Engineering, 85(5-6), 1362-1366. Elsevier
Microelectronic engineering, 85(5-6), 1362-1366. Elsevier
Delft, F C M J M, van den Heuvel, F C, Loesberg, W A, te Riet, J, Schön, P, Figdor, C G, Speller, S, van Loon, J J W A, Walboomers, X F & Jansen, J A 2008, ' Manufacturing substrate nano-grooves for studying cell alignment and adhesion ', Microelectronic engineering, vol. 85, no. 5-6, pp. 1362-1366 . https://doi.org/10.1016/j.mee.2008.01.028
Nano-scale pattern templates have been manufactured in order to study the differences in cell behaviour between fibroblasts cultured on smooth and on grooved substrata. The pattern templates were made on silicon wafers using electron beam lithography
Publikováno v:
Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture. 222:67-76
The realization of complex three-dimensional structures at micro- and nanometre scale in various materials is of great importance for a number of micromechanical, microoptical, and microelectronic applications. Focused ion beam (FIB) patterning is on
Autor:
S. van den Boogaart, J. Maessen, F.C.M.J.M. van Delft, J. G. Kloosterboer, W. Catsburg, F. H. P. M. Habraken, E. J. K. Verstegen
Publikováno v:
Microelectronic Engineering. :540-545
Copolymers of methylmethacrylate (MMA) and trimethylsilyl-methylmethacrylate (SiMMA) in various molar ratios have been synthesised and characterised for use as a resist in electron beam lithography. The development procedure has been optimised in ter
Autor:
R. Morton, A.K. van Langen-Suurling, E. van der Drift, Michael Lim, Henry I. Smith, M. Peuker, J. Romijn, F.C.M.J.M. van Delft
Publikováno v:
Microelectronic Engineering. :803-809
Hydrogen SilsesQuioxane (HSQ) has previously been shown to behave as a high-resolution negative tone inorganic e-beam resist, giving single lines less than 10 nm wide. In this work, HSQ has been investigated for its applicability in photon-based lith
Autor:
E. F. M. J. van Thiel, R. G. R. Weemaes, Jaap Snijder, Dan V. Nicolau, F.C.M.J.M. van Delft, H. van Zalinge
Publikováno v:
Microelectronic Engineering. 88:2707-2709
The fabrication of electrode pairs with a small electrode gap separation using a focussed-ion-beam is reported. Using a previously developed technique, the gap between the electrodes was bridged using several benzenedimethanethiol molecules and a sin
Autor:
A. J. van Run, A. J. van Dodewaard, J. Romijn, W. S. M. M. Ketelaars, F.C.M.J.M. van Delft, J. A. J. Kwinten, R. F. M. Roes, A.K. van Langen-Suurling
Publikováno v:
Microelectronic Engineering. 53:461-464
The negative tone resists NEB22 and UVN30 have been studied for their contrast and resolution in e-beam lithography, as well as in 248 nm DUV lithography. Also, their etch resistances have been determined in O"2, SF"6/He and CHF"3/O"2 plasmas in comp