Zobrazeno 1 - 10
of 29
pro vyhledávání: '"F.C. van den Heuvel"'
Autor:
X. F. Walboomers, W. A. Loesberg, J. te Riet, J.J.W.A. van Loon, Peter Schön, John A. Jansen, Carl G. Figdor, Sylvia Speller, F.C.M.J.M. van Delft, F.C. van den Heuvel
Publikováno v:
Microelectronic Engineering, 85, 1362-1366
Microelectronic Engineering, 85, 5-6, pp. 1362-1366
Microelectronic Engineering, 85(5-6), 1362-1366. Elsevier
Microelectronic engineering, 85(5-6), 1362-1366. Elsevier
Delft, F C M J M, van den Heuvel, F C, Loesberg, W A, te Riet, J, Schön, P, Figdor, C G, Speller, S, van Loon, J J W A, Walboomers, X F & Jansen, J A 2008, ' Manufacturing substrate nano-grooves for studying cell alignment and adhesion ', Microelectronic engineering, vol. 85, no. 5-6, pp. 1362-1366 . https://doi.org/10.1016/j.mee.2008.01.028
Microelectronic Engineering, 85, 5-6, pp. 1362-1366
Microelectronic Engineering, 85(5-6), 1362-1366. Elsevier
Microelectronic engineering, 85(5-6), 1362-1366. Elsevier
Delft, F C M J M, van den Heuvel, F C, Loesberg, W A, te Riet, J, Schön, P, Figdor, C G, Speller, S, van Loon, J J W A, Walboomers, X F & Jansen, J A 2008, ' Manufacturing substrate nano-grooves for studying cell alignment and adhesion ', Microelectronic engineering, vol. 85, no. 5-6, pp. 1362-1366 . https://doi.org/10.1016/j.mee.2008.01.028
Nano-scale pattern templates have been manufactured in order to study the differences in cell behaviour between fibroblasts cultured on smooth and on grooved substrata. The pattern templates were made on silicon wafers using electron beam lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3e1347eb6fae1408d718855012e86fb
https://doi.org/10.1016/j.mee.2008.01.028
https://doi.org/10.1016/j.mee.2008.01.028
Autor:
Marcel A. Verheijen, Johan Hendrik Klootwijk, R. G. R. Weemaes, K. B. Jinesh, D. Blin, F.C. van den Heuvel, Monja Kaiser, H.-D. Kim, J. F.C. Verhoeven, J. Ruigrok, Fred Roozeboom, Wouter Dekkers
Publikováno v:
IEEE Electron Device Letters, 29(7), 740-742. Institute of Electrical and Electronics Engineers
"Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f62c599282a47a53edeaf0084324f9aa
https://doi.org/10.1109/led.2008.923205
https://doi.org/10.1109/led.2008.923205
Autor:
Alf Månsson, Jenny Aveyard, J.P. van Zijl, Dan V. Nicolau, Joanna Hajne, Jaap Snijder, F.C. van den Heuvel, Malin Persson, F.C.M.J.M. van Delft
Publikováno v:
Imaging, Manipulation, and Analysis of Biomolecules, Cells, and Tissues XI.
In recent years there has been increasing interest in the use of molecular motors and cytoskeletal filaments in nanotechnological applications, particularly in the production of biomedical microdevices. In order for this to be possible it is importan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a1b861354739cbee01fc6b03cacb8da
https://doi.org/10.1117/12.2010094
https://doi.org/10.1117/12.2010094
Publikováno v:
Microelectronic Engineering. 21:209-212
The modification or repair of integrated circuits by means of focused-ion-beam-induced deposition occasionally fails due to interruptions in the deposited metal line at steps on the surface. In this paper we study the parameters which determine the q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a2785e6a69e20d0af3514b1994079ec
https://doi.org/10.1016/0167-9317(93)90057-c
https://doi.org/10.1016/0167-9317(93)90057-c
Autor:
M.H.F. Overwijk, F.C. van den Heuvel
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1324-1327
A time-dependent model for focused-ion-beam-induced metal deposition is presented which describes the competition between gas adsorption and ion-assisted gas removal, and the competition between metal deposition and sputtering. The model contains all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f29b584f246070ad65a7658ef54ef0a
https://doi.org/10.1016/0168-583x(93)90792-5
https://doi.org/10.1016/0168-583x(93)90792-5
Autor:
Franck Murray, J.H. Klootwijk, Fred Roozeboom, F.C. van den Heuvel, J.F.C. Verhoeven, Catherine Bunel, Serge Bardy, F. LeCornec
Publikováno v:
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
The very large development of home and domestic electronic appliances as well as portable device has led the microelectronics industry to evolve in two complimentary directions: "More Moore" with the continuous race towards extremely small dimensions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3763148d61c6f59c1eebbde17dc51db2
https://doi.org/10.1109/smic.2007.322803
https://doi.org/10.1109/smic.2007.322803
Autor:
F.C. van den Heuvel, Jan Verhoeven, Fred Roozeboom, Serge Bardy, J.H. Klootwijk, F. LeCornec, Catherine Bunel, Franck Murray
Publikováno v:
Scopus-Elsevier
The very large development of home and domestic electronic appliances as well as portable device has led the microelectronics industry to evolve in two complimentary directions : “More Moore” with the continuous race towards extremely small dimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ab67dc1b0859a6dcee490cbae358f14
https://doi.org/10.1557/proc-0969-w02-01-v02-01
https://doi.org/10.1557/proc-0969-w02-01-v02-01
Autor:
Fred Roozeboom, Noemí Pérez, J.G.M. van Berkurn, Petra Alen, J.C. Hooker, M. Leskela, E.P. Naburgh, F.C. van den Heuvel, J.W. Maes, M. Ritala
Publikováno v:
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).
Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (/spl Phi//sub m/) of these films was determined by high-frequency capacitance-v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e21523265cea54ce371b99d2c40c7ddf
https://doi.org/10.1109/essder.2004.1356494
https://doi.org/10.1109/essder.2004.1356494
Publikováno v:
Chemical Physics Letters. 88:59-62
The rotational spectrum of CF in its ground electronic state was studied around 1000 GHz, using a tunable far-infrared source. Seven transitions were observed originating from the 2 Π 1/2 and 2 Π 3/2 substates. The hyperfine and Λ-type splittings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2652e88b6d27058e10de5a343c75dfed
https://doi.org/10.1016/0009-2614(82)80070-5
https://doi.org/10.1016/0009-2614(82)80070-5
Publikováno v:
Chemical Physics Letters. 92:215-218
The rotational transitions N = 1 ← 0, J = 2 ← 1 and N = 1 ← 0, J = 1 ← 1 of the NH radical in the 3Σ− electronic and vibrational ground state have been observed around 1 THz with resolved hyperfine structure. Spectra were recorded at zero
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd9439a329fd0665ba39e98fe03761e4
https://doi.org/10.1016/0009-2614(82)80262-5
https://doi.org/10.1016/0009-2614(82)80262-5