Zobrazeno 1 - 10
of 37
pro vyhledávání: '"F.C. Voogt"'
Autor:
Som Nath, Sumy Jose, Hilco Suy, Micha in't Zandt, Agata Sakic, Geert Calaerts, Nebojsa Nenadovic, Cecile van der Schaar, Frederik Vanhelmont, Ahmed Abdelrazek, F.C. Voogt, Erik Jan Lous
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
This paper deals with assessing the reliability of integrated capacitive polymer humidity sensors. We propose Relative Humidity CycLing (RHCL) test as a methodology to evaluate, qualify and benchmark relative humidity sensors. Two types of sensor dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a0581782dd1cda9a5522d6f7beb78e1
https://doi.org/10.1109/irps.2017.7936304
https://doi.org/10.1109/irps.2017.7936304
Autor:
W.H.A. Wien, Fred Roozeboom, Harm C. M. Knoops, H.W. van Zeijl, Wilhelmus M. M. Kessels, M. Saadaoui, R. M. C. M. van de Sanden, C. Kwakernaak, F.C. Voogt, H. T. M. Pham, Pasqualina M. Sarro
Publikováno v:
Ieee Transactions on Components Packaging and Manufacturing Technology, 1, 1728-1738
IEEE Transactions on Components, Packaging and Manufacturing Technology, 11, 1, 1728-1738
IEEE Transactions on Components and Packaging Technologies, 1(11), 1728-1738. Institute of Electrical and Electronics Engineers
IEEE Transactions on Components, Packaging and Manufacturing Technology, 11, 1, 1728-1738
IEEE Transactions on Components and Packaging Technologies, 1(11), 1728-1738. Institute of Electrical and Electronics Engineers
One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::390c5cdce6c7fc5aec9e7e434140c66a
https://doi.org/10.1109/tcpmt.2011.2167969
https://doi.org/10.1109/tcpmt.2011.2167969
Autor:
Georgios Vellianitis, Guillaume Boccardi, Monja Kaiser, Blandine Duriez, R.J.P. Lander, M.J.H. van Dal, F.C. Voogt, L Witters
Publikováno v:
IEEE Transactions on Electron Devices. 56:1548-1553
In this brief, we report on how controllable process parameters such as metal-gate physical thickness and interfacial-layer-formation method affect the electrical and structural properties of TiN/HfO2/SiO2 gate stacks. We found evidence that Hf is di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a7ada5b7025033fd0ce34e9c85c8119
https://doi.org/10.1109/ted.2009.2021718
https://doi.org/10.1109/ted.2009.2021718
Publikováno v:
Journal of Crystal Growth, 174(1-4), 440-445. ELSEVIER SCIENCE BV
A wide range of iron oxides have been grown epitaxially on MgO(100) substrates using a dual beam technique in which the deposited iron is oxidised by a beam of NO 2 particles. At high fluxes magnetite (Fe 3-δ O 4 ) phases with compositions between n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a7938120478e11b719e72ed50c4483e
https://doi.org/10.1016/s0022-0248(96)01140-2
https://doi.org/10.1016/s0022-0248(96)01140-2
Autor:
F.C. Voogt, T. Hibma, van der Paa Paul Heijden, Jjtm Donkers, van der Pj Zaag, de Wjm Wim Jonge, L. Niesen
Publikováno v:
Journal of Applied Physics, 85(8), 5291-5293. AMER INST PHYSICS
Journal of Applied Physics, 85(8), 5291-5293. American Institute of Physics
Journal of Applied Physics, 85(8), 5291-5293. American Institute of Physics
Recent studies show that the magnetic properties of epitaxial thin films of magnetite (Fe3O4) deviate strongly from bulk behavior: it is difficult to saturate thin films, ultrathin films may become super paramagnetic, their saturation magnetization d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a02e44545bfbfb3e29cc3ae12d88eda6
https://doi.org/10.1063/1.369857
https://doi.org/10.1063/1.369857
Autor:
Axel Nackaerts, Nadine Collaert, Liesbeth Witters, Georgios Vellianitis, T.S. Doorn, Rita Rooyackers, Malgorzata Jurczak, T. Merelle, F.C. Voogt, Blandine Duriez, M.J.H. van Dal, Bartek Pawlak, G. Curatola, Gerben Doornbos, R.J.P. Lander, Ray Duffy, Phillip Christie
Publikováno v:
2008 IEEE International Electron Devices Meeting.
Vt-mismatch, and thus SRAM scalability, is greatly improved in narrow SOI FinFETs, with respect to planar bulk, because of their undoped channel and near-ideal gate control. We show by simulations and by measurements that in FinFETs, unlike planar bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb416cf89f1f85dc05351dfc8cef2e43
https://doi.org/10.1109/iedm.2008.4796662
https://doi.org/10.1109/iedm.2008.4796662
Autor:
Bartek Pawlak, Nick Bennett, R. G. R. Weemaes, Fred Roozeboom, Mark J. H. van Dal, Ray Duffy, Nick E. B. Cowern, F.C. Voogt, P. C. Zalm
Publikováno v:
Scopus-Elsevier
Doping of thin body Si becomes very essential topic due to increasing interest of forming source/drain regions in fully depleted planar silicon-on-isolator (SOI) devices or vertical Fin field-effect-transistors (FinFETs). To diminish the role of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c35a8255a42e46029ac3d142a09dcf4
https://doi.org/10.1557/proc-1070-e04-06
https://doi.org/10.1557/proc-1070-e04-06
Autor:
L.J. Choi, Guillaume Boccardi, P. Meunier-Beillard, Roger Loo, S. Van Huylenbroeck, Eddy Kunnen, G. Wmderickx, B. De Vos, F.C. Voogt, D. Baute, J.J.T.M. Donkers, W. D. van Noort, F. Vleugels, G.A.M. Hurkx, E.A. Hijzen, Mark C. J. C. M. Kramer, Tony Vanhoucke, Stefaan Decoutere, A. Sibaja-Hernandez, R.M.T. Pijper, S. Peeters, Rafael Venegas, T. Vandeweyer
Publikováno v:
2007 IEEE International Electron Devices Meeting.
In this paper we describe a novel fully self-aligned HBT architecture, which enables a maximum reduction of device parasitics. TCAD simulations show that this architecture is capable of achieving fT/fmax values of 295/425 GHz for an effective emitter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c0c3528863f3f67b9f3cb2a7fda4528
https://doi.org/10.1109/iedm.2007.4419029
https://doi.org/10.1109/iedm.2007.4419029
Autor:
Ray Duffy, Gerben Doornbos, H. Roberts, Liesbeth Witters, Annelies Delabie, Andriy Hikavyy, Monja Kaiser, R.J.R. Lander, Sofie Mertens, Serge Biesemans, G. Curatola, R. G. R. Weemaes, Rita Rooyackers, Georgios Vellianitis, Stephan Beckx, Li-Shyue Lai, Malgorzata Jurczak, C. Torregiani, Frederik Leys, C. Jonville, Bartek Pawlak, F.C. Voogt, T. Vandeweyer, D. Donnet, Nadine Collaert, C. Delvaux, M.J.H. van Dal, J. Petty, Marc Demand
Publikováno v:
2007 IEEE International Electron Devices Meeting.
Excellent performance (995 muA/mum at Ioff=94 n A/mum and Vdd=lV) and short channel effect control are achieved for tall, narrow FinFETs without mobility enhancement. Near-ideal fin/gate profiles are achieved with standard 193 nm immersion lithograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5967a30f3976ce16484408c584f36d01
https://doi.org/10.1109/iedm.2007.4419037
https://doi.org/10.1109/iedm.2007.4419037
Autor:
Dirk J. Gravesteijn, Jlm Oosthoek, Gam Hurkx, K. Attenborough, Marcel A. Verheijen, Bart J. Kooi, F.C. Voogt
Publikováno v:
Journal of Applied Physics, 117(6):064504, 064504-1-064504-6. AMER INST PHYSICS
Journal of Applied Physics, 117(6):064504, 1-6. American Institute of Physics
Journal of Applied Physics, 117(6):064504, 1-6. American Institute of Physics
Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac401cf210349916e04127c00f9db569
https://doi.org/10.1063/1.4908023
https://doi.org/10.1063/1.4908023