Zobrazeno 1 - 10
of 29
pro vyhledávání: '"F.C. Tseng"'
Publikováno v:
Microelectronics Reliability. 44:1233-1243
In this paper, some practical considerations for effective and efficient wafer-level reliability control (WLRC) are presented. We propose a better solution to replace the previous method by adding a protection diode to avoid process induced charging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f5757dc2ffb9dc4f40ec78bab4c9a7
https://doi.org/10.1016/j.microrel.2004.04.009
https://doi.org/10.1016/j.microrel.2004.04.009
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 52:1458-1467
Wafer-level reliability (WLR) testing receives much attention and becomes a major tool for process reliability qualification and in-line monitoring because WLR can provide real-time results for timely improvements. This in-situ test capability is gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381db831ee4d7e8cce52cd73f024faee
https://doi.org/10.1109/tim.2003.818543
https://doi.org/10.1109/tim.2003.818543
Publikováno v:
Microelectronics Reliability. 43:713-724
This paper depicts the improvement of poly-silicon (poly-Si) holes induced failures during gate oxide integrity (GOI) voltage-ramp (V-Ramp) tests by replacing plasma enhanced oxidation with silicon rich oxidation (SRO), which is cap oxide on transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::197624b6f8448603a3c8fd234c9a10a7
https://doi.org/10.1016/s0026-2714(03)00059-3
https://doi.org/10.1016/s0026-2714(03)00059-3
Publikováno v:
IEEE Transactions on Electron Devices. 41:692-697
Some anomalous behaviors, such as punchthrough voltage reduction, leakage current increase, and transconductance (g/sub m/) instability have been found in BF/sub 2/ implanted p/sup +/-polysilicon P-MOSFET's. These effects are supposed to be due to B-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a493382045277580ce577edddfa8c750
https://doi.org/10.1109/16.285018
https://doi.org/10.1109/16.285018
Publikováno v:
Solid-State Electronics. 33:1151-1154
Etching following re-oxidation (commonly called rounding-off oxidation) and oxide/nitride/oxide (ONO) dielectrics were used to improve the breakdown characteristics of trench capacitors fabricated by RIE processing. These improved trench capacitors w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16575db3f938c4478864cf48e5e505e3
https://doi.org/10.1016/0038-1101(90)90093-t
https://doi.org/10.1016/0038-1101(90)90093-t
Publikováno v:
Thin Solid Films. 185:363-371
The flow angle is an important characteristic of borophosphosilicate (BPSG) films. In this work the effects of chemical compositions and various film post-growth treatments, namely delay time, deionized water rinse and flow ambients, on the flow angl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ab48dc49497983fad6a18ffbd99888
https://doi.org/10.1016/0040-6090(90)90099-y
https://doi.org/10.1016/0040-6090(90)90099-y
Publikováno v:
IEEE International Integrated Reliability Workshop Final Report, 2004.
An innovative multi-via test structure is developed for the isothermal electromigration (Iso-EM) test, which is a well-known wafer-level reliability (WLR) test methodology. The proposed test structure consists of a metal line with more than one via a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf2e6712e2cb2678b30c42133767b6a0
https://doi.org/10.1109/irws.2004.1422762
https://doi.org/10.1109/irws.2004.1422762
Autor:
F.C. Tseng
Publikováno v:
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326).
TSMC started the dedicated foundry industry 12 years ago. This not only accelerated the disintegration trend in the semiconductor industry, but also has created a multi-billion dedicated foundry business today. In next decade, foundry paradigm is exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c04f061dd17ae5331dd5e9f686c6709
https://doi.org/10.1109/vlsic.1999.797212
https://doi.org/10.1109/vlsic.1999.797212
Publikováno v:
International Symposium on VLSI Technology, Systems and Applications.
The effects of various borophosphosilicate glass (BPSG) film postgrowth treatments on the film after-flow angles have been explored with ESCA (electron spectroscopy for chemical analysis) and FTIR (Fourier transform infrared spectroscopy). The experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3dcae25df72ae9364175dad8c465457
https://doi.org/10.1109/vtsa.1989.68588
https://doi.org/10.1109/vtsa.1989.68588
Publikováno v:
IEEE Transactions on Electron Devices. 41:458-460
Different post oxide annealing technologies, i.e. furnace and/or RTA were done in borophosphosilicate glass (BPSG) films under flow and reflow. It is found that the threshold voltage shift is apparent in P-MOSFET but small in N-MOSFET for a device wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd53cd9662b9191ef02076c61e69cd9c
https://doi.org/10.1109/16.275238
https://doi.org/10.1109/16.275238