Zobrazeno 1 - 10
of 28
pro vyhledávání: '"F.-M. Kiessling"'
Publikováno v:
Crystal Research and Technology. 44:1067-1077
Bulk GaAs crystals were grown from various Ga-rich melts by the vapour-pressure controlled Czochralski method in order to reduce As precipitates. The correlation of the melt composition with both, structural perfection and solid composition was exami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1dacdf6954da5c47db5cb50a0ee092
https://doi.org/10.1002/crat.200900444
https://doi.org/10.1002/crat.200900444
Autor:
P. Rudolph, F.-M. Kiessling
Publikováno v:
Journal of Physics and Chemistry of Solids. 69:289-293
GaAs crystals have been grown by the vapour pressure controlled Czochralski (VCz) method without boric oxide encapsulant. The melt compositions were in situ controlled and the carbon concentration adjusted. Low doped p- and n-type conducting GaAs has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aff15c6815753612ba78c2c0520a20f
https://doi.org/10.1016/j.jpcs.2007.07.022
https://doi.org/10.1016/j.jpcs.2007.07.022
Publikováno v:
Materials Science in Semiconductor Processing. 6:303-306
Results of the growth of semi-insulating GaAs crystals by the VCz method without B2O3 encapsulant are presented. Crystals have been grown from Ga-rich and near-stoichiometric melts controlled by As partial pressure in the range from 590°C to 630°C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f06921c88c0ca3d7aa800e59a56283
https://doi.org/10.1016/j.mssp.2003.07.022
https://doi.org/10.1016/j.mssp.2003.07.022
Publikováno v:
Semiconductor Science and Technology. 8:2151-2160
Hg0.8Cd0.2Te crystals grown by the travelling heater method show characteristic carrier concentration profiles along their longitudinal axis. Positron annihilation measurements confirm that the carrier concentration profiles can be identified with Hg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0613e7906fc4e275c5d7a0a82659b924
https://doi.org/10.1088/0268-1242/8/12/020
https://doi.org/10.1088/0268-1242/8/12/020
Publikováno v:
Journal of Crystal Growth. 128:604-608
In Hg 0.8 Cd 0.2 Te crystals grown by the travelling heater method (THM), a significant increase in carrier concentration in the last solidified part is observed. The carriers can be identified with mercury vacancies. The observed longitudinal vacanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8621511b715e7ec27758a9232c86488f
https://doi.org/10.1016/s0022-0248(07)80008-x
https://doi.org/10.1016/s0022-0248(07)80008-x
Autor:
F. M. Kiessling, Hartmut S. Leipner
Publikováno v:
Journal of Crystal Growth. 128:599-603
Transmission electron microscopy investigations of Hg 0.8 Cd 0.2 Te crystals grown by the travelling heater method are presented. In as-grown material mercury vacancy loops are found at a density of about 1 x 10 15 cm -3 . These defects completely di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6754b4311a12d6f4f105252c393f7b82
https://doi.org/10.1016/s0022-0248(07)80007-8
https://doi.org/10.1016/s0022-0248(07)80007-8
Akademický článek
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Autor:
W. Salewski, F. M. Kiessling
Publikováno v:
Crystal Research and Technology. 21:287-292
For incandescent lamp wire fabrication various powder metallurgical steps are necessary. The stepwise reduction of WO3 to the tungsten metal powder is one of these. During reduction chemical reactions take place under participation of doping elements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e10e71bc40e5459b19d7efe102b4276f
https://doi.org/10.1002/crat.2170210225
https://doi.org/10.1002/crat.2170210225
Autor:
F. M. Kiessling, Peter Rudolph
Publikováno v:
Crystal Research and Technology. 23:1207-1224
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d0f054f5135a6a696a21cf20ff79f0
https://doi.org/10.1002/crat.2170231002
https://doi.org/10.1002/crat.2170231002
Akademický článek
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