Zobrazeno 1 - 10
of 131
pro vyhledávání: '"F. van Raay"'
Publikováno v:
Advances in Radio Science, Vol 11, Pp 197-206 (2013)
This work presents concepts and designs for two essential components of a frequency agile transmit and receive module based on Radio Frequency Micro Electro Mechanical System (RF MEMS) switches for the frequency range from 3.5 GHz up to 8.5 GHz. The
Externí odkaz:
https://doaj.org/article/ad11da80761544daa6f333cb35c3a81b
Autor:
Christian Friesicke, B. Amado-Rey, Oliver Ambacher, Y. Campos-Roca, Arnulf Leuther, F. van Raay, Hermann Massler
Publikováno v:
2018 11th German Microwave Conference (GeMiC).
A 4-way Wilkinson and a 4:1 Dolph-Chebyshev divider MMIC based on grounded coplanar waveguide technology on GaAs are presented, analyzed and compared. The Dolph-Chebyshev structure was simulated by using electromagnetic software, whereas the 4-way Wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee49c787ed99ca75d8b99e01e7a2ae32
https://doi.org/10.23919/gemic.2018.8335096
https://doi.org/10.23919/gemic.2018.8335096
Autor:
F. van Raay, Christian Friesicke, Oliver Ambacher, Hermann Massler, B. Amado-Rey, Arnulf Leuther, Y. Campos-Roca
The first full $G$ -band power amplifier module demonstrated in GaAs metamorphic high electron mobility transistor (mHEMT) technology has been developed for use as a driver amplifier in instrumentation. The circuit integrated in this module uses a co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bacb07a25a00defd3e79552c85d00cca
https://publica.fraunhofer.de/handle/publica/254522
https://publica.fraunhofer.de/handle/publica/254522
Akademický článek
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High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier
Autor:
F. van Raay, M. Musser, Erdin Ture, Peter Brückner, Oliver Ambacher, Rudiger Quay, V. Carrubba, Michael Dammann, Stephan Maroldt
Publikováno v:
IEEE Microwave and Wireless Components Letters. 25:526-528
This letter presents the realization of a high-efficiency, high-temperature Continuous Class-E Sub-Waveform Solution power amplifier using for the first time GaN technology. The recently introduced Continuous Class-E PA mode theory has revealed new a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdb1d447c9fecaebd929e3e64db11b14
https://doi.org/10.1109/lmwc.2015.2440758
https://doi.org/10.1109/lmwc.2015.2440758
Autor:
F. van Raay, Rudiger Quay, F. van Rijs, M. Seelmann, Wolfgang Bronner, Jutta Kuhn, Rudolf Kiefer, Michael Mikulla, M. Musser, Michael Dammann, T. Rodle, K. Riepe, Stefan Müller, Patrick Waltereit, Oliver Ambacher
Publikováno v:
physica status solidi (a). 206:1215-1220
We present a systematic study of epitaxial growth, processing technology, device performance and reliability of our GaN HEMTs and MMICs manufactured on 3 inch SiC substrates. Epitaxy and processing are optimized for both performance and reliability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a4f46ced0e1e99ff40101d89a45f009
https://doi.org/10.1002/pssa.200880774
https://doi.org/10.1002/pssa.200880774
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 55:195-206
A state-space approach to large-signal (LS) modeling of high-speed transistors is presented and used as a general framework for various model descriptions of the dispersive features frequently observed for HEMTs at low frequency. Ensuring unrestricte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d40ca0700f8c0f74ff71509a505aec91
https://doi.org/10.1109/tmtt.2006.889154
https://doi.org/10.1109/tmtt.2006.889154
Publikováno v:
83rd ARFTG Microwave Measurement Conference.
Active harmonic loadpull measurements investigation for a 1-mm AlGaN/GaN HEMT power transistor at X-Band frequencies are in this paper reported. The paper highlights the transistor performances in terms of maximum PAE, POUT and Gain achieved at 8.7 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd852114546ca44fb926daf36987447
https://doi.org/10.1109/arftg.2014.6899516
https://doi.org/10.1109/arftg.2014.6899516
Autor:
Michael Schlechtweg, Dirk Schwantuschke, Rudiger Quay, F. van Raay, Matthias Seelmann-Eggebert, Oliver Ambacher, Detlef Peschel
A new concept for the low-frequency dispersion aspect of large-signal modeling of microwave III-V field-effect transistors is presented. The approach circumvents the integrability problem between the small-signal transconductance G mRF and the output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73896e6e121a9670876a5d9b62211ab5
https://publica.fraunhofer.de/handle/publica/231595
https://publica.fraunhofer.de/handle/publica/231595
Autor:
Patrick Waltereit, Rudolf Kiefer, Michael Dammann, M. Musser, Wolfgang Bronner, Jutta Kuhn, Richard Reiner, Peter Brückner, Rudiger Quay, Michael Mikulla, M. Casar, F. van Raay, Stefan Müller, Oliver Ambacher, C. Haupt
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth can be performed on either SiC or Si substrates in order to provide high-quality AlGaN/GaN heterostructures. These heterostructures are then utilized in orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b26bf56c4b9f051616922c4d3130803f
https://publica.fraunhofer.de/handle/publica/232503
https://publica.fraunhofer.de/handle/publica/232503