Zobrazeno 1 - 2
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pro vyhledávání: '"F. Y. Soon"'
Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET
Autor:
D. Abdul Hadi, F. Y. Soon, Norhayati Soin, A. H. M. Zahirul Alam, Y. Abdul Wahab, Hanim Hussin, Anis Nurashikin Nordin, S. F. Wan Muhamad Hatta
Publikováno v:
2017 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE).
A major effect of different measurement delay in seconds is revealed through quasi DC Stress Measure Stress experiments. We found that different delay of measurements in seconds contributed to different stress time needed to achieve target 10% degrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e74b6ddcda39e36394c1f8918dd9ce3
https://doi.org/10.1109/iscaie.2017.8074978
https://doi.org/10.1109/iscaie.2017.8074978
Publikováno v:
Microelectronic Engineering. 111:256-260
Due to aggressive scaling of CMOS technology, many time-variant issues are catastrophic to MOSFET reliability. Hot carrier injection (HCI) is one of these reliability issues and is a limiting factor for n-MOSFET performance. The HCI aging effect caus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b219ed4c4b68b3d01368076f9ec77a0
https://doi.org/10.1016/j.mee.2013.04.036
https://doi.org/10.1016/j.mee.2013.04.036