Zobrazeno 1 - 3
of 3
pro vyhledávání: '"F. W. Hewlett"'
Autor:
F. W. Hewlett, James H. Smith, Bevan D. Staple, H. A. Watts, A. P. Griego, Christopher W. Dyck
Publikováno v:
SPIE Proceedings.
Thy monolithic integration of MicroElectroMechanical Systems (MEMS) with the driving, controlling, and signal processing electronics promises to improve the performance of micromechanical devices as well as lower their manufacturing, packaging, and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a8e80155c9c3b753e554079cc1307a0
https://doi.org/10.1117/12.324085
https://doi.org/10.1117/12.324085
Autor:
R. Flores, R.E. Anderson, Julie A. Shimer, William J. Nagy, R.A. Kohler, R. Koga, S.D. Steenwyk, K.H. Lee, F. W. Hewlett, J.S. Fu, J.C. Desko
Publikováno v:
1987 International Electron Devices Meeting.
The processing and design geometric scaling effects on the soft-error tolerance levels of the 16K 2-µm technology and the 256K 1-µm technology CMOS SRAMs are separated by fabricating the 16K 2-µm design with the 1-µm process. Although the 1-µm t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df87504d7c580531e28424982cf24969
https://doi.org/10.1109/iedm.1987.191482
https://doi.org/10.1109/iedm.1987.191482
Autor:
F. W. Hewlett, R. A. Pedersen
Publikováno v:
14th International Reliability Physics Symposium.
The reliability of Integrated Injection Logic (I2L) or Merged Transistor Logic (MTL) circuits fabricated in a standard bipolar technology with Ti-Pt-Au interconnection is reported. The study is based on accelerated stress aging and actual field resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03d3b2e05e2a758990e4c608595229d7
https://doi.org/10.1109/irps.1976.362714
https://doi.org/10.1109/irps.1976.362714