Zobrazeno 1 - 10
of 33
pro vyhledávání: '"F. Vermaerke"'
Publikováno v:
IEEE Communications Magazine. 35:72-77
This article presents a new systematic approach to network evolution, considering access and core network evolution as a whole. The evolution phases are designed to fulfill the following evolution requirements. Each phase provides an incentive to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::918023e4ae20ffebd5a7cf71dc4ba6e8
https://doi.org/10.1109/35.642835
https://doi.org/10.1109/35.642835
Autor:
Anders Gustafsson, Gerrit Vermeire, Piet Demeester, Roel Baets, Jan Haes, P. Van Daele, F. Vermaerke, Ingrid Moerman, Lars Samuelson
Publikováno v:
Journal of Crystal Growth. 145:875-880
In this paper we propose the monolithic integration of quantum well InGaAs/GaAs 0.98 μm lasers with passive mode-size convertors using the shadow-masked growth technique. The full width at half maximum (FWHM) of the far-field in the transverse direc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::923c9f3b56e577a385e201066cc8e78d
https://doi.org/10.1016/0022-0248(94)91156-8
https://doi.org/10.1016/0022-0248(94)91156-8
Publikováno v:
Journal of Electronic Materials. 23:121-124
Nonplanar metalorganic vapor phase epitaxial growth on submicron gratings has been studied. Growth conditions have been determined to preserve the grating structure and also to enhance the formation of crescent shaped quantum well wire-like GaAs laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e412f82d0339e00548ffe951dc5c87e
https://doi.org/10.1007/bf02655257
https://doi.org/10.1007/bf02655257
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences. 344:481-492
The fabrication of quantum well wires (QWWs) by overgrowing submicron gratings is reviewed. The advantages of one-dimensional semiconductor structures have already been understood for some time and are expected to alter laser performances, such as ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b40adc7506ef3f333adb64668672984b
https://doi.org/10.1098/rsta.1993.0102
https://doi.org/10.1098/rsta.1993.0102
Publikováno v:
Journal of Crystal Growth. 124:513-518
The formation of vertical AlGaAs quantum wells during MOVPE growth of AlGaAs layers on submicron gratings has been investigated. The influence of the growth temperature, growth velocity, V/III ratio and the overall Al content has been examined and ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e692e4caafe206497e8a49b1870fab52
https://doi.org/10.1016/0022-0248(92)90509-h
https://doi.org/10.1016/0022-0248(92)90509-h
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9994c73bc5c130be81ba7a870adce5ae
https://doi.org/10.1109/movpe.1992.664938
https://doi.org/10.1109/movpe.1992.664938
Publikováno v:
Conference on Lasers and Electro-Optics Europe.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cc01efc66f068ec89f3d18d872321b9
https://doi.org/10.1109/cleoe.1994.636728
https://doi.org/10.1109/cleoe.1994.636728
Publikováno v:
LEOS '92 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b9f43d67ef243ae3e7a682ef830665
https://doi.org/10.1109/leos.1992.693898
https://doi.org/10.1109/leos.1992.693898
Publikováno v:
Proceedings of LEOS '93.
In this paper we propose a new technique based on tapering of the waveguide layer along the cavity by Shadow Masked Growth (SMG), which yields low threshold lasers with a narrow farfield. Due to the diffusion limited MOVPE growth process the growth v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22738997ac6685a5d178183b35547570
https://doi.org/10.1109/leos.1993.379250
https://doi.org/10.1109/leos.1993.379250
Monolithic integrated multi-wavelength SCH SQW InGaAs/GaAs laser array by shadow masked MOVPE growth
Publikováno v:
Proceedings of LEOS'94.
An array of InGaAs/GaAs QW lasers emitting between 915 and 960 nm is realised by shadow masked growth. Threshold currents down to 9 mA and quantum efficiencies to 29% have been obtained.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a6437a614bbacd2fa2130e44be73ee2
https://doi.org/10.1109/leos.1994.586624
https://doi.org/10.1109/leos.1994.586624