Výsledky vyhledávání - "F. V. Di Girolamo"

Effect of a plasma polymerised linalyl acetate dielectric on the optical and morphological properties of an n-type organic semiconductor

Autor: F. V. Di Girolamo, Liam J. Anderson, Antonio Cassinese, Mohan V. Jacob, Mario Barra

Publikováno v: Applied Physics A. 105:95-102

Thin films of the n-type, organic semiconductor PDI-8CN2 were thermally evaporated on two different dielectric surfaces and their optical and morphological properties investigated using Variable Angle Spectroscopic Ellipsometry (VASE) and Atomic Forc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2bec1f9ab403fe174662374bd516907
https://doi.org/10.1007/s00339-011-6487-9

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Addressing the use of PDIF-CN2 molecules in the development of n-type organic field-effect transistors for biosensing applications

Autor: F. V. Di Girolamo, Antonio Cassinese, Francesco Bloisi, Davide Viggiano, Maria Virginia Soldovieri, Paolo Ambrosino, Maurizio Taglialatela, Mario Barra

Publikováno v: Biochimica et Biophysica Acta (BBA) - General Subjects. 1830:4365-4373

Background There is no doubt that future discoveries in the field of biochemistry will depend on the implementation of novel biosensing techniques, able to record biophysiological events with minimal biological interference. In this respect, organic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::731c8e2ed5e2a8480ac84b3d82aeef46
https://doi.org/10.1016/j.bbagen.2012.11.025

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Optical properties of thermally evaporated PDI-8CN2 thin films

Autor: Mohan V. Jacob, F. V. Di Girolamo, Mario Barra, Liam J. Anderson, Antonio Cassinese

Publikováno v: Physics Procedia. 14:29-33

The optical properties of thermally evaporated PDI-8CN2 thin films have been investigated using Variable Angle Spectroscopic Ellipsometry (VASE). These layers were deposited on SiO2 dielectric layers as a means of measuring their properties on a stan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44431fcd1c9a49185af79aab1bf2678b
https://doi.org/10.1016/j.phpro.2011.05.007

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Surface doping in T6/PDI-8CN2 heterostructures investigated by transport and photoemission measurements

Autor: Francesca Ciccullo, Roberta Tatti, Salvatore Iannotta, L. Aversa, F. V. Di Girolamo, Antonio Cassinese, Mario Barra, Roberto Verucchi

Publikováno v: Applied physics letters 101 (2012): 233504-1. doi:10.1063/1.4769345
info:cnr-pdr/source/autori:L. Aversa, R. Verucchi, R. Tatti, F. V. Di Girolamo, M. Barra, F. Ciccullo, A. Cassinese, and S. Iannotta/titolo:Surface doping in T6%2FPDI-8CN2 heterostructures investigated by transport and photoemission measurements/doi:10.1063%2F1.4769345/rivista:Applied physics letters/anno:2012/pagina_da:233504-1/pagina_a:/intervallo_pagine:233504-1/volume:101

In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect transistors by PDI-8CN2. We show that an accumulation heterojunction is formed at the interface between the organic semiconductors and that the consequent band be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d25b31d76eae7564d737ea89eaff6bb

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Investigation on bias stress effects in n-type PDI8-CN2 thin-film transistors

Autor: Francesca Ciccullo, F. V. Di Girolamo, Antonio Cassinese, Antonio Carella, Mario Barra

In this contribution, we investigate the bias stress phenomenon in n-type PDI8-CN 2 thin-film transistors fabricated by evaporation on both bare and hexamethyldisyloxane (HMDS)-treated SiO 2 gate dielectrics. Since the morphological properties of PDI

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::432ec7db9afc73a1c4ec85eea9f06d82
http://hdl.handle.net/11588/506690

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Dicyanoperylene-diimide thin film growth: a combined optical and morphological study

Autor: P. Maddalena, Mario Barra, F. Chiarella, F. V. Di Girolamo, L. Santamaria, Stefano Lettieri, Antonio Cassinese

N,N′-bis (n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) molecules represent an important example of novel n-type organic materials for realization of air-stable n-channel organic thin film transistors. In this work, the growth by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fafd5093b8482008246818feb26f5ef4
http://hdl.handle.net/11588/391453

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Bias stress instability in organic transistors investigated by ac admittance measurements

Autor: V. Capello, Mario Barra, Antonio Cassinese, F. V. Di Girolamo, C. Romano, M. Oronzio

In this paper, the bias stress effect (BSE) in organic field-effect transistors has been analyzed by an alternative experimental approach based on ac admittance (Y=G+jωC) measurements. conductance (C) and capacitance (G) curves have been recorded as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf103293eef2d3e2a095fd6c9c713e80
http://hdl.handle.net/11588/390259

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Very low bias stress in n-type organic single-crystal transistors

Autor: Mario Barra, I. Gutiérrez Lezama, Zhihua Chen, Antonio Facchetti, Alberto F. Morpurgo, Nikolas Aron Minder, Antonio Cassinese, F. V. Di Girolamo

Publikováno v: Applied Physics Letters, Vol. 100, No 13 (2012) P. 133301
APPLIED PHYSICS LETTERS

Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as com

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf8803d8d8cdf470968654754b66bf21
https://archive-ouverte.unige.ch/unige:34973

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Cell viability studies and operation in cellular culture medium of n-type organic field-effect transistors

Autor: F. V. Di Girolamo, Davide Viggiano, R. Di Capua, Mario Barra, Maurizio Taglialatela, Francesca Santoro, Antonio Cassinese

The possibility of the fabrication of organic devices suitable to be applied in bio-sensing fields depends largely on the availability of organic compounds displaying robust electrical properties even in aqueous solutions and effective biocompatibili

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1422eb7d951e13be79a6cd20eb1c586f
http://hdl.handle.net/11588/506693

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