Zobrazeno 1 - 10
of 89
pro vyhledávání: '"F. Thibaudau"'
Publikováno v:
Langmuir. 19:682-686
Atomic force microscopy (AFM) was used to study oligonucleotide adsorption on a gold surface. Oligonucleotides are thiolated at the 5‘ end with SH(CH2)6-5‘ to adsorb them specifically via a gold−sulfur linkage. Thanks to nanoscopic resolution o
Autor:
F. Thibaudau, L. Masson
Publikováno v:
Surface Science
Surface Science, Elsevier, 2002, 504, pp.191-198
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2002, 504, pp.191-198
Surface Science, Elsevier, 2002, 504, pp.191-198
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2002, 504, pp.191-198
Si(1 1 1) homoepitaxy using silane in ultra-high vacuum chemical vapor deposition conditions has been studied with scanning tunneling microscopy during growth at high temperatures (460–560 °C). We have especially been interested in the atomic stru
Autor:
Rubén Pérez, F. Thibaudau, Anne Charrier, Fernando Flores, J.-M. Debever, José Ortega, J.-M. Themlin
Publikováno v:
Progress in Surface Science. 67:299-307
Electron correlation effects for the two-dimensional electron gas associated with the surface bands of the Sn/Si(1 1 1)–3×3, 3×3, Sn/Ge(1 1 1)–3×3 and 3×3 reconstructions are analyzed. Unrestricted local-density-approximation (LDA) calculatio
Autor:
Anne Charrier, J-M Debever, F. Thibaudau, Fernando Flores, Rubén Pérez, J-M Themlin, José Ortega
Publikováno v:
Journal of Physics: Condensed Matter. 13:L521-L528
The unoccupied electronic structure of the model interface Sn/Si(111)-α-(3)1/2 has been measured at room temperature (RT) using angle-resolved inverse photoemission spectroscopy (KRIPES). In addition to a partly occupied surface band crossing the Fe
Autor:
José Ortega, J.-M. Themlin, Rubén Pérez, J.-M. Debever, F. Thibaudau, Anne Charrier, Fernando Flores
Publikováno v:
Applied Surface Science. :195-200
Using angle-resolved inverse photoemission spectroscopy (KRIPES), we have investigated the unoccupied electronic structure of the model interface Sn/Si(1 1 1)-α- 3 at room temperature. In addition to a “metallic” surface state crossing the Fermi
Publikováno v:
Applied Surface Science. :406-412
Due to the higher vapour pressure of silicon, silicon carbide surfaces annealed at high temperature under vacuum tend to graphitize. The comparison of graphite formation on the silicon and carbon terminations of 6H–SiC reveals significant differenc
Publikováno v:
Applied Surface Science. :375-379
This work presents a detailed comparison of the electronic properties of two phases (α and γ) of the prototypical Si(111)– 3 × 3 –Sn system, focussing on the empty surface states. The latter reconstruction has been studied at room temperature
Autor:
F. Thibaudau
Publikováno v:
Surface Science. 416:L1118-L1123
We study the two-dimensional island density in the first stage of silicon deposition on Si(111)7×7. Taking into account the coalescence-deconstruction mechanisms proposed by Tochihara and Shimada, we evaluated the density N S of 2D islands as a func
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2967-2973
The adsorption at room temperature of ferrocene and iron pentacarbonyl on Si(111)7×7 and B/Si(111)√3×√3 R30° have been studied. On Si(111)7×7, the adsorption sites have been identified by means of scanning tunneling microscopy. We propose a f
Publikováno v:
Surface Review and Letters. :55-61
In this work, we present a scanning tunneling microscopy (STM) study of the LPCVD (low pressure chemical vapor deposition) growth of Si on Si(111)-(7 × 7) using silane ( SiH 4) decomposition. Surface reactivities have been studied at room and high t