Zobrazeno 1 - 10
of 44
pro vyhledávání: '"F. Tenbusch"'
Autor:
K. Lübelsmeyer, Th. Kubicki, W. Braunschweig, St. König, D. Gräßel, R. Siedling, W.J. Xiao, C. Rente, M. Toporowski, Ch. Röper, F. Tenbusch, J Breibach, O. Syben
Publikováno v:
Nuclear Physics B - Proceedings Supplements. 78:505-510
A GaAs pixel detector constructed in Aachen has been tested in a 4 GeV electron beam at DESY. The experimental setup allowed tilting the detector with respect to the beam line with angles of incidence from 0° to 45°. The sensor-array consisted of 8
Autor:
W. Braunschweig, D. Gräßel, Ch. Röper, J Breibach, R. Siedling, K. Lübelsmeyer, F. Tenbusch, O. Syben, Th. Kubicki, W.J. Xiao, D. Albertz, M. Toporowski, C. Rente
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:1-5
GaAs strip and pixel detectors constructed in Aachen have been tested in a 1.4 GeV electron beam in Bonn and in a 5 GeV electron beam at DESY in February and May 1997. The strip detectors had a pitch of 50μm with a strip width of 25μm and were made
Autor:
R. Krais, K. Lübelsmeyer, W. Braunschweig, C. Rente, Th. Kubicki, M. Toporowski, Z. Chu, D. Pandoulas, O. Syben, F. Tenbusch, W.J. Xiao, Bruno Wittmer
Publikováno v:
Nuclear Physics B - Proceedings Supplements. 61:415-426
We investigated the noise behaviour of surface barrier detectors (double sided Schottky contact) made of Semiinsulating GaAs. Two types of measurements were performed: Equivalent Noise Charge (ENC) and noise power density spectra in a frequency range
Autor:
C. Rente, M. Toporowski, Th. Kubicki, W.J. Xiao, K. Lübelsmeyer, W. Braunschweig, O. Syben, Waclaw Karpinski, D. Albertz, R. Krais, Bruno Wittmer, F. Tenbusch
Publikováno v:
Nuclear Physics B - Proceedings Supplements. 61:438-441
We report on the fabrication of GaAs microstrip detectors with integrated coupling capacitors and biasing resistors. The characteristics of the dielectrica SiO2 and Si3N4 are compared. The SiO2 layers were fabricated by evaporation. The Si3N4 layers
Autor:
Z. Chu, Th. Kubicki, O. Syben, W.J. Xiao, F. Tenbusch, W. Braunschweig, R. Krais, Waclaw Karpinski, D. Albertz, C. Rente, K. Lübelsmeyer, M. Toporowski
Publikováno v:
Nuclear Physics B - Proceedings Supplements. 61:427-431
Semi-insulating GaAs detectors processed in Aachen using Freiberger Compound Material with low carbon content (FCM-LC) have been irradiated with protons (23 GeV) at eleven different fluences up to 6.3 × 10 14 p/cm 2 at room temperature. The detector
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 394:1-6
This paper discusses the electrical properties of complementary GaAs heterojunction FETs and of amplifiers based on these devices before and after irradiation with neutrons for a total fluence of 1.1 × 1015 n/cm2. Measurements were made on the thres
Autor:
Z. Chu, S Arbabi, R. Siedling, Waclaw Karpinski, Bruno Wittmer, M. Toporowski, C. Rente, R. Krais, W.J. Xiao, J Breibach, F. Tenbusch, K. Lübelsmeyer, W. Braunschweig, Th. Kubicki, O. Syben
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 388:408-411
GaAs strip and pixel detectors constructed in Aachen have been tested at CERN in a 50 GeV pion beam in September 1995 in collaboration with the CMS Tracker group. The strip detectors had a pitch of 100 μm and were made of a 250 μm thick Freiberger
Autor:
Z. Chu, S Arbabi, W.J. Xiao, K. Lübelsmeyer, C. Rente, W. Braunschweig, F. Tenbusch, M. Toporowski, Th. Kubicki, R. Krais, Bruno Wittmer, O. Syben
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 388:383-389
Surface barrier detectors processed in Aachen using SI-GaAs from several manufacturers have been irradiated with high fluences of neutrons (mean energy 1 MeV, fluence up to Φ n ∼ 5 × 10 14 cm −2 ), pions (191 MeV, fluence up to Φ π ∼ 0.6 ×
Autor:
S Arbabi, Waclaw Karpinski, K. Lübelsmeyer, R. Siedling, C. Rente, Th. Kubicki, Z. Chu, F. Tenbusch, W. Braunschweig, Bruno Wittmer, J Breibach, O. Syben, M. Schoentag, W.J. Xiao, R. Krais, M. Toporowski
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 388:390-394
In order to achieve a high signal-to-noise ratio and a low-space consumption it is necessary to use integrated resistors for the biasing of GaAs microstrip detectors used in high-energy physics experiments (e.g. CMS, H1). Metal-semiconductor-metal (M
Autor:
J Breibach, W. Braunschweig, G. Pierschel, D. Pandoulas, F. Tenbusch, K. Lübelsmeyer, Waclaw Karpinski, C. Rente
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 388:412-416
We report measurement results with single GaAs complementary heterojunction field effect transistors (CHFETs) and monolithic CHFET-based operational amplifiers. The devices have been exposed to neutrons (1 MeV peak energy, total fluence of 5 × 1014n