Zobrazeno 1 - 10
of 104
pro vyhledávání: '"F. T. Vasko"'
Autor:
Ryzhii, F. T. Vasko V.
Publikováno v:
PHYSICAL REVIEW B 77, 195433 (2008)
We examine the photoconductivity of an intrinsic graphene associated with far- and mid-infrared irradiation at low temperatures. The model under consideration accounts for the excitation of the electron-hole pairs by incident radiation, the interband
Externí odkaz:
http://arxiv.org/abs/0801.3476
Autor:
F. T. Vasko
The 2D electrons trapped in vacuum near the atomically thin dielectric (ATD, mono- or $N$-layer film of $h$-BN or transition metal dichalcogenide) are considered. ATD is suspended above the back gate and forms the capacitor which is controlled by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6111d51a4aa4a3a47b9be95a9ab478d6
http://arxiv.org/abs/2103.10424
http://arxiv.org/abs/2103.10424
Autor:
F. T. Vasko
We study a superconducting transmission line (TL) formed by distributed LC oscillators and excited by external magnetic fluxes which are aroused from random magnetization (A) placed in substrate or (B) distributed at interfaces of a two-wire TL. Low-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3e63fec40fafc62cd263102535976ab
Publikováno v:
physica status solidi c. 5:269-272
The transient magnetoresponse of electrons with partially-inverted distribution excited by an ultrashort optical pulse in bulk GaAs and InSb is considered. A huge transient amplification of a probe microwave or THz field due to negative cyclotron abs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ca0718f3052260255dc7f2bb948102c
https://doi.org/10.1002/pssc.200776516
https://doi.org/10.1002/pssc.200776516
Publikováno v:
physica status solidi c. 5:211-214
Intersubband response in a biased superlattice with equipopulated levels is studied within the tight-binding approximation and the complex dielectric permittivity is calculated beyond the Born approximation for a wide spectral region. The low-frequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a2d92b5f4ff6d04a1b78c3f965e05fa
https://doi.org/10.1002/pssc.200776511
https://doi.org/10.1002/pssc.200776511
Publikováno v:
Journal of Physics: Condensed Matter. 17:6925-6933
The effect of an intense THz irradiation on the relative intersubband absorption of electrons in stepped quantum wells of GaAs?GaAlAs is theoretically studied. Analytical expressions for the induced current are obtained by means of the adiabatic and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9e5362a4b04ee6395fcdca956f491b1
https://doi.org/10.1088/0953-8984/17/43/011
https://doi.org/10.1088/0953-8984/17/43/011
Autor:
A V Korovin, F T Vasko
Publikováno v:
Journal of Physics D: Applied Physics. 36:1166-1170
The third-order non-linear response due to spin-flip transitions of electrons in asymmetric narrow-gap quantum wells with a spin-split energy spectrum is calculated. The resonant spectral dependences and the gate-voltage dependences of the third-orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e04e7867b762f64677cc34e9c02545a
https://doi.org/10.1088/0022-3727/36/10/302
https://doi.org/10.1088/0022-3727/36/10/302
Publikováno v:
Journal of Physics: Condensed Matter. 13:7283-7293
The coherent response of electrons in a double-well superlattice with two minibands when the superlattice is photoexcited with an ultra-short laser pulse is studied theoretically. Since the gap between the two minibands oscillates with the variation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c715a6f27e3fdd47a1543372852dbb
https://doi.org/10.1088/0953-8984/13/33/309
https://doi.org/10.1088/0953-8984/13/33/309
Publikováno v:
Physical Review B. 62:8192-8198
We calculate the difference-harmonic susceptibility of a superlattice subject to uniform electric field, where generation of the difference harmonic is caused by interband transitions between hole and electron states. Both the electron and hole state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f45289cd0c7f4eb7ca190a0afa2054
https://doi.org/10.1103/physrevb.62.8192
https://doi.org/10.1103/physrevb.62.8192
Autor:
F T Vasko, M V Strikha
Publikováno v:
Journal of Physics: Condensed Matter. 12:4141-4149
Semiconductor alloy with spatially non-uniform change of composition close to the averaged value, corresponding to the transition between gapless and narrow-gap states, is studied. The density of states is calculated within the two-band model of band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::942016285923d4241a793694a7f7b53c
https://doi.org/10.1088/0953-8984/12/17/317
https://doi.org/10.1088/0953-8984/12/17/317