Itenerant metamagnetism of the Co-sublattice in the Y1−Nd Co3 system in ultrahigh magnetic fields up to 110 T

Autor: M.I. Bartashevich, K. Koui, F. Sugaya, Isao Yamamoto, H. Aruga Katori, Masuhiro Yamaguchi, T. Goto

Publikováno v: Physica B: Condensed Matter. 193:10-16

Magnetization measurements have been carried out for Y1−xNdxCo3 compounds with 0⩽x⩽1 in ultrahigh magnetic fields up to 110T. The compound exhibits two metamagnetic transitions of the Co sublattice to a higher moment state. Both transition fiel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4528496533d3910efb3281c5b825dc37
https://doi.org/10.1016/0921-4526(94)90046-9

ChemInform Abstract: Magnetic Properties of NdCo3 and Its γ-Phase Hydride NdCo3H4.1

Autor: Masuhiro Yamaguchi, M.I. Bartashevich, Tsuneaki Goto, K. Koui, F. Sugaya, Isao Yamamoto

Publikováno v: ChemInform. 25

Magnetization measurements have been carried out for an aligned powder sample of NdCo3 and for an isotropic sample of the hydride NdCo3H4.1. NdCo3 is a ferromagnet with Tc = 381 K and exhibits a spin reorientation transition of easy direction from th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f8adf24b042c5d29d6cfc4c5417229e
https://doi.org/10.1002/chin.199408020

Adaptive Video News Story Tracking based on Earth Mover'S Distance

Autor: M. Uddenfeldt, Matsumoto Kazunori, K. Hoashi, F. Sugaya

Publikováno v: ICME

This paper proposes an adaptive system for video news story tracking based on the Earth Mover's Distance (EMD). When an interesting story appears in the news, it is flagged manually as a topic for tracking. Our system then tracks the events as they u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9435330069bbcf0c93d4246d1563ac58
https://doi.org/10.1109/icme.2006.262709

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High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

Autor: S. Subbanna, Huilong Zhu, T. Shinohara, R.-V. Bentum, H. Kuroda, C. Penny, Jay W. Strane, D. McHerron, D. Harmon, D. Zamdmer, Q. Ye, Yoshiaki Toyoshima, Paul D. Agnello, S. Wu, G. Freeman, L. Tsou, Atsushi Azuma, Scott J. Bukofsky, Carl J. Radens, M. Angyal, M. Fukasawa, Effendi Leobandung, Byeong Y. Kim, M. Gerhardt, Y. Tan, L. Su, Tenko Yamashita, Anda Mocuta, I.C. Inouc, Takeshi Nogami, Scott D. Allen, R. Logan, K. Miyamoto, Shih-Fen Huang, Ravikumar Ramachandran, J. Pellerin, A. Ray, Siddhartha Panda, Christine Norris, H.V. Meer, H. Nayakama, Mizuki Ono, Keith Jenkins, J. Heaps-Nelson, Wenjuan Zhu, D. Ryan, Michael A. Gribelyuk, B. Dirahoui, M. Inohara, E. Nowak, I. Melville, S. Lane, T. Ivers, K. Ida, Scott Halle, Ishtiaq Ahsan, M.-F. Ng, Huicai Zhong, H. Harifuchi, S.-K. Ku, N. Kepler, F. Wirbeleit, Emmanuel F. Crabbe, H. Yan, T. Kawamura, Mahender Kumar, A. Nomura, L. K. Wang, F. Sugaya, H. Hichri, Gary B. Bronner, P. O'Neil, K. Miyashita, Michael P. Belyansky, J. Cheng, S.-H. Rhee, Lars W. Liebmann, D. Yoneyama, Dan Mocuta, K. McStay, G. Sudo, Dureseti Chidambarrao

Publikováno v: Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

A high performance 65 nm SOI CMOS technology is presented featuring 35 nm gate length, 1.05 nm gate oxide, performance enhancement from dual stress nitride liners (DSL), and 10 wiring levels with low-k dielectric offered in the first 8 levels. DSL en

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19c3a590b7034d81db7315743b8ecea4
https://doi.org/10.1109/.2005.1469238