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pro vyhledávání: '"F. Steinhagen"'
Tetracycline Inhibits Pulmonary Inflammasome Activation via Caspase-1 in COVID-19 Patients with ARDS
Autor:
K. Peukert, C. Feuerborn, A. Sauer, M. Fox, S. Schulz, F. Steinhagen, C. Putensen, E. Latz, C. Wilhelm, C. Bode
Publikováno v:
A101. DEFINING CELLULAR AND MOLECULAR IMMUNE MECHANISMS IN LUNG INFECTIONS, ARDS, AND SEPSIS.
Publikováno v:
TP52. TP052 ARDS STUDIES.
Publikováno v:
The Thoracic and Cardiovascular Surgeon. 66:S1-S110
Akademický článek
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Akademický článek
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Publikováno v:
Materials Science and Engineering: B. 35:59-63
Hydride vapor phase epitaxy was used to selectively regrow semi-insulating InP:Fe over different InP-based laser mesa structures containing layers of the InAlGaAs material system with Al mol fractions up to 0.48. Although stable Al-containing oxides
Autor:
A Mattheus, H. Janning, Herbert Burkhard, S. Hansmann, F. Steinhagen, R G Gobel, Hartmut Hillmer, B Kempf, S. Mohrdiek, R. Lösch, W. Schlapp, H. Walter, H Scholl
Publikováno v:
Pure and Applied Optics: Journal of the European Optical Society Part A. 4:409-415
We have investigated the injection-locking (IL) technique as a useful tool to substantially reduce the chirp of directly modulated semiconductor lasers in standard fibre transmission systems. Chirpless transmission is presented for Fabry-Perot, bulk
Publikováno v:
Superlattices and Microstructures. 8:269-272
The establishment of the equivalent circuit of the Permeable Base Transistor (PBT) is here presented. The equivalent circuit is deduced from the numerical simulation of its electrical characteristics, at slow varying regime. We begin from a natural e
Publikováno v:
Electronics Letters. 31:1346-1348
Strain-compensated MQW structures with AlInGaAs barriers and up to 15 AlInGaAs wells were grown by molecular beam epitaxy (MBE) and characterised by photoluminescence and X-ray diffraction. Our structures show very low threshold currents of 4 mA and
Autor:
Herbert Burkhard, R. Lösch, F. Steinhagen, S. Hansmann, H. Janning, H. Nickel, Hartmut Hillmer, Hans L. Hartnagel, W. Schlapp
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
The authors demonstrated the growth and reproducibility of various molecular beam epitaxy InAlGaAs/InGaAs 1.5/spl mu/m separate confinement heterostructure and graded index separate confinement heterostructure multi quantum well (MQW) laser diodes wi