Zobrazeno 1 - 10
of 40
pro vyhledávání: '"F. Siebke"'
Publikováno v:
Journal of Non-Crystalline Solids. :78-82
Thin films of hydrogenated amorphous silicon have been prepared by plasma enhanced chemical vapor deposition and transferred under ultra-high vacuum (UHV) conditions to a scanning tunneling microscopy (STM)/atomic force microscopy (AFM) analysis cham
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc9789e9fe88407c1e56df40c2eeaa7b
https://doi.org/10.1016/s0022-3093(98)00216-6
https://doi.org/10.1016/s0022-3093(98)00216-6
Publikováno v:
Journal of Non-Crystalline Solids. :432-436
Gap states in a-SiGe:H alloys were examined by numerical simulations of sub-bandgap absorption spectra measured by the constant photocurrent method and photothermal deflection spectroscopy. In contrast to simple deconvolution methods our analysis use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680e124f5a6ccac118094c3cc12a344b
https://doi.org/10.1016/s0022-3093(98)00088-x
https://doi.org/10.1016/s0022-3093(98)00088-x
Publikováno v:
Journal of Non-Crystalline Solids. :977-981
Undoped microcrystalline silicon with various crystallinities was deposited by rf-glow discharge. We investigate the correlation between crystallinity and optoelectronic properties. The use of a constant photocurrent method for characterization of un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4924f9055413a3ae8c8753bf3956827
https://doi.org/10.1016/s0022-3093(98)00261-0
https://doi.org/10.1016/s0022-3093(98)00261-0
Publikováno v:
Scopus-Elsevier
The performance of amorphous silicon based solar cells depends on the tailored properties of the various layer materials making up the cell structure as well as on the properties and on the design of the interface regions between the layers. The elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6715047e997f75ccecc3fac2821bc622
https://doi.org/10.1016/s0927-0248(97)00147-5
https://doi.org/10.1016/s0927-0248(97)00147-5
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 358:210-213
A poor electric contact between the ZnO and the p-type a-SiC:H(B) layer limits the fill factor of amorphous silicon solar cells using ZnO as front electrode. To gain a deeper understanding of the chemical and electronic properties of the ZnO/p interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e966c1b536d46b58db53fed26afde5e
https://doi.org/10.1007/s002160050386
https://doi.org/10.1007/s002160050386
Publikováno v:
Solar Energy Materials and Solar Cells. :529-536
In order to obtain information about the density of localized gap states in a-Si:H, i.e., the valence band tail, the integrated defect density, the energetic defect distribution and the charge state of the defect states, a numerical model has been de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e10ff6cb1c6f6e77c258d118d56520d
https://doi.org/10.1016/0927-0248(95)00140-9
https://doi.org/10.1016/0927-0248(95)00140-9
Publikováno v:
Solar Energy Materials and Solar Cells. :485-492
This paper addresses the problem of preparing a good p-layer contact with zinc oxide as TCO. Our approach was to deposit pin cells with different p-layer recipes on ZnO coated SnO2:F and on uncoated SnOi2:F in one run, in order to obtain a direct com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586b2ed2ccc2a610a1c4b62e7224a94d
https://doi.org/10.1016/0927-0248(95)00126-3
https://doi.org/10.1016/0927-0248(95)00126-3
Publikováno v:
Journal of Non-Crystalline Solids. :339-342
The density of states (DOS) of a-Si:H and the influence of light soaking were studied with the constant photocurrent method (CPM) and total-yield photoelectron spectroscopy for films prepared at substrate temperatures between 100°C and 400°C. While
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81b9b0ab49ef4f03071515fee734be5
https://doi.org/10.1016/s0022-3093(05)80125-5
https://doi.org/10.1016/s0022-3093(05)80125-5
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 358:338-340
As-grown films of hydrogenated amorphous silicon (a-Si : H, highly phosphorous-doped) were investigated by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Hills up to 10 nm in height and 10 to 20 nm in diameter have been observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25245341be876e74472ed1848dd74fa4
https://doi.org/10.1007/s002160050423
https://doi.org/10.1007/s002160050423
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
This paper addresses the problem of preparing a good p-layer contact with zinc oxide as TCO (transparent conducting oxide). Our approach was to deposit pin cells with different p-layer recipes on ZnO coated SnO/sub 2/:F and on uncoated SnO/sub 2/:F i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52e1778de5b84d54b1f25c3903f11f7c
https://doi.org/10.1109/wcpec.1994.520007
https://doi.org/10.1109/wcpec.1994.520007