Zobrazeno 1 - 10
of 13
pro vyhledávání: '"F. Shadi Shahedipour-Sandvik"'
Autor:
Kasey Hogan, Miguel Rodriguez, Emma Rocco, Vincent Meyers, Benjamin McEwen, F. Shadi Shahedipour-Sandvik
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085110-085110-6 (2020)
Here, we report on the application of an electron source with high accelerating voltage (62 kV–200 kV) to simulate betavoltaic power generation capabilities of a planar GaN PIN (p-GaN/i-GaN/n-GaN) device. The in situ electrical characterization rep
Externí odkaz:
https://doaj.org/article/3abb963fd532480d8e24ded1aa384394
Autor:
Ya Fei Liu, Hong Yu Peng, Ze Yu Chen, Qian Yu Cheng, Shan Shan Hu, Balaji Raghothamachar, Michael Dudley, Ramon Collazo, Zlatko Sitar, James Tweedie, Michal Bockowski, Vincent Meyers, F. Shadi Shahedipour-Sandvik, Bing Jun Li, Jung Han
Publikováno v:
Materials Science Forum. 1062:351-355
Synchrotron X-ray topography techniques are used to characterize the microstructures in gallium nitride materials being developed for selective area doping for power electronic applications. Bulk substrates grown by different methods, epitaxial layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c9a30af354c673bbb876b273adc8d82
https://doi.org/10.4028/p-dd26nr
https://doi.org/10.4028/p-dd26nr
Autor:
Michael Alexander Reshchikov, Mykhailo Vorobiov, Oleksandr Andrieiev, Benjamin McEwen, Emma Rocco, Vincent Meyers, Denis O. Demchenko, F. Shadi Shahedipour-Sandvik
Publikováno v:
physica status solidi (b). :2200487
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271e42cc8adc1577aeac4395550a9a36
https://doi.org/10.1002/pssb.202200487
https://doi.org/10.1002/pssb.202200487
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We report here our latest results of achieving high quantum efficiency (QE) N-polar GaN photocathodes through engineering of bulk and interfacial impurity concentrations. The photocathode structures studied consist of an N-polar p-GaN absorbing layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9797261a82c4514d7e72ce17343b83d5
https://doi.org/10.1117/12.2578627
https://doi.org/10.1117/12.2578627
Autor:
Kenneth A. Jones, Vlad Sklyar, Michael Shevelev, Michael A. Derenge, Milena B. Graziano, Andrew C. Lang, Woongje Sung, Sean Tozier, Kasey Hogan, Mitra L. Taheri, F. Shadi Shahedipour-Sandvik
Publikováno v:
Gallium Nitride Materials and Devices XIV.
The advancement in potential selective placement of p-GaN regions places the gallium nitride (GaN) material system on the forefront of next generation power semiconductor devices. The ion implantation technique is commonly used in fabrication of semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9780dafd00c2f667030f9ae995502a0a
https://doi.org/10.1117/12.2506824
https://doi.org/10.1117/12.2506824
Autor:
Jeff Leathersich, Jonathan Marini, Isra Mahaboob, F. Shadi Shahedipour-Sandvik, Puneet Suvarna, Neil Newman, John Bulmer
Publikováno v:
IEEE Photonics Technology Letters. 28:39-42
We report on the polarization engineering of GaN/AlGaN heterostructures for the improvement of III-Nitride photodetectors through physics-based device simulations. Various heterojunction p-i-n and p-i-n-i-n designs are proposed and analyzed in this c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::097a28237d32af6518e9812b8db24dd8
https://doi.org/10.1109/lpt.2015.2479115
https://doi.org/10.1109/lpt.2015.2479115
Autor:
Michael Dudley, Karolina Grabianska, Kenneth A. Jones, Andrew A. Allerman, Andrew M. Armstrong, Ramon Collazo, Yafei Liu, Tuerxun Ailihumaer, Robert Kucharski, Hongyu Peng, James Tweedie, Zlatko Sitar, Balaji Raghothamachar, F. Shadi Shahedipour-Sandvik, Michal Bockowski
Publikováno v:
Journal of Crystal Growth. 551:125903
Ammonothermal growth of bulk gallium nitride (GaN) crystals is considered the most suitable method to meet the demand for high quality bulk substrates for power electronics. A non-destructive evaluation of defect content in state-of-the-art ammonothe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::302456f1dfbaf73aaad1425c5b579f69
https://doi.org/10.1016/j.jcrysgro.2020.125903
https://doi.org/10.1016/j.jcrysgro.2020.125903
Autor:
M. Shevelev, Michael A. Derenge, Kasey Hogan, Emma Rocco, Vlad Sklyar, Kenneth A. Jones, Benjamin McEwen, Vincent Meyers, F. Shadi Shahedipour-Sandvik
Publikováno v:
ECS Meeting Abstracts. :1812-1812
A key step to the development of future (Al)GaN-based power devices is the ability to form selective-area p-type regions, and a promising method of accomplishing this is through ion implantation of the dominant acceptor dopant, Mg. Ion implantation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3323d3aed605c71549778c9388d16d16
https://doi.org/10.1149/ma2020-02261812mtgabs
https://doi.org/10.1149/ma2020-02261812mtgabs
Autor:
Yuji Zhao, Jung Han, Yafei Liu, Kai Fu, F. Shadi Shahedipour-Sandvik, Andrew M. Armstrong, Balaji Raghothamachar, Andrew A. Allerman, Tuerxun Ailihumaer, Houqiang Fu, Kenneth A. Jones, Hongyu Peng, Michael Dudley
Publikováno v:
Journal of Crystal Growth. 544:125709
Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::652b0063e5a177bebfc7663d47b81fa7
https://doi.org/10.1016/j.jcrysgro.2020.125709
https://doi.org/10.1016/j.jcrysgro.2020.125709
Autor:
L. Douglas Bell, F. Shadi Shahedipour-Sandvik, Jeffrey M. Leathersich, John Bulmer, Puneet Suvarna, Jonathan Marini, Shouleh Nikzad, John Hennessy, Isra Mahaboob
Publikováno v:
IEEE Photonics Technology Letters. 27:498-501
We report on the development of ion implantation-based contact-edge termination technique to improve the reliability and performance of p-i-n and p-i-n-i-n GaN ultraviolet avalanche photodiode structures. The GaN photodiode structures were grown on s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0d3c1756a76f0d34a35f14609a1420
https://doi.org/10.1109/lpt.2014.2382611
https://doi.org/10.1109/lpt.2014.2382611