Zobrazeno 1 - 10
of 106
pro vyhledávání: '"F. Schleicher"'
Autor:
Q.T. Le, E. Gül Arslan, J. Rip, H. De Coster, P. Verdonck, D. Radisic, F. Schleicher, I. Vaesen, T. Conard, E. Altamirano-Sanchez
Publikováno v:
Micro and Nano Engineering, Vol 19, Iss , Pp 100208- (2023)
Ruthenium (Ru) is a noble metal and is known to be resistant to many common chemicals and mixtures. We report in this study a controlled etching/recessing of Ru via wet processing and a combination of dry and wet process using metal-free chemical mix
Externí odkaz:
https://doaj.org/article/b87555e7064846dba9edb84348476e52
Autor:
R. Chen, M. Lofrano, G. Mirabelli, G. Sisto, S. Yang, A. Jourdain, F. Schleicher, A. Veloso, O. Zografos, P. Weckx, G. Hiblot, G. Van der Plas, G. Hellings, J. Ryckaert, E. Beyne
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
C. Wu, V. Vega-Gonzalez, H. De Coster, Q. T. Le, F. Schleicher, A. Lesniewska, G. Murdoch, S. Park, Zs. Tokei
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Autor:
V.M. Blanco Carballo, D. Cerbu, F. Schleicher, J. van de Kerkhove, P. Leray, N. N. Kissoon, E. P. De Poortere
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Autor:
A. Veloso, A. Jourdain, D. Radisic, R. Chen, G. Arutchelvan, B. O'Sullivan, H. Arimura, M. Stucchi, A. De Keersgieter, M. Hosseini, T. Hopf, K. D'have, S. Wang, E. Dupuy, G. Mannaert, K. Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, T. Schram, B. Briggs, C. Lorant, E. Rosseel, A. Hikavyy, R. Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, K. Devriendt, B. T. Chan, S. Demuynck, G. Hiblot, G. Van der Plas, J. Ryckaert, G. Beyer, E. Dentoni Litta, E. Beyne, N. Horiguchi
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
S. Paolillo, Guillaume Boccardi, N. Jourdan, Manoj Jaysankar, Zheng Tao, Sylvain Baudot, Geert Mannaert, Juergen Boemmels, T. Hopf, E. Capogreco, Shouhua Wang, Efrain Altamirano, E. Dupuy, Olalla Varela Pedreira, B. Briggs, Thomas Chiarella, Joris Cousserier, Sofie Mertens, Romain Ritzenthaler, Frank Holsteyns, C. Lorant, Goutham Arutchelvan, Ingrid Demonie, Steven Demuynck, K. Kenis, Xiuju Zhou, Anshul Gupta, F. Sebai, D. Radisic, Zsolt Tokei, Erik Rosseel, A. Sepulveda, Naoto Horiguchi, Christel Drijbooms, Antony Premkumar Peter, Haroen Debruyn, Nouredine Rassoul, Bilal Chehab, P. Morin, Boon Teik Chan, Christopher J. Wilson, Katia Devriendt, Noemie Bontemps, Frederic Lazzarino, Paola Favia, Lieve Teugels, D. Yakimets, F. Schleicher, Houman Zahedmanesh, Jerome Mitard, Min-Soo Kim, An De Keersgieter, Sujith Subramanian, Kevin Vandersmissen, Hans Mertens, Eugenio Dentoni Litta, Yong Kong Siew
Publikováno v:
IEEE Transactions on Electron Devices. 67:5349-5354
Buried power rail (BPR) is a key scaling booster for CMOS extension beyond the 5-nm node. This work demonstrates, for the first time, the integration of tungsten (W) BPR lines with Si finFETs. BPR technology requires insertion of metal in the front-e
Autor:
F. Schleicher, R. Blanc, P. Bezard, Mark John Maslow, Eric Hendrickx, Jara Garcia Santaclara, A. Moussa, J-H. Franke, A. Thiam, P. Wong
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
The goal of this work is to prepare process readiness towards High NA EUV lithography, by using 0.33NA exposures on NXE3400B scanner. We focus on photoresists, underlayers and etch processes mitigation of P24nm Line Space patterns. Etch transfer has
Autor:
Di Wang, Ufuk Halisdemir, D. Spor, Bhavishya Chowrira, Daniel Lacour, Samy Boukari, K. Katcko, Martin Bowen, Arnaud Boulard, Victor Da Costa, L. M. Kandpal, Franck Ngassam, Damien Mertz, Eric Beaurepaire, Michel Hehn, Mebarek Alouani, C. Kieber, Torsten Scherer, François Montaigne, A. Bahouka, B. Leconte, E. Sternitzky, N. Beyer, Pierre Panissod, F. Schleicher, Jacek Arabski, E. Urbain, Wolfgang Weber, Christian Kübel
Publikováno v:
Advanced Functional Materials
Advanced Functional Materials, Wiley, 2021, 31 (15), pp.2009467. ⟨10.1002/adfm.202009467⟩
Advanced Functional Materials, 2021, 31 (15), pp.2009467. ⟨10.1002/adfm.202009467⟩
Advanced Functional Materials, Wiley, 2021, 31 (15), pp.2009467. ⟨10.1002/adfm.202009467⟩
Advanced Functional Materials, 2021, 31 (15), pp.2009467. ⟨10.1002/adfm.202009467⟩
International audience; The quantum states of nano-objects can drive electrical transport properties across lateral and local-probe junctions. This raises the prospect, in a solid-state device, of electrically encoding information at the quantum leve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf0d248a98daac628bfdd8c5c648b672
https://hal.archives-ouvertes.fr/hal-03411655
https://hal.archives-ouvertes.fr/hal-03411655
Autor:
Nancy Heylen, Koung-min Ryu, Christophe Beral, Werner Gillijns, Zsolt Tokei, Insung Kim, Nadia Vandenbroeck, Ilhwan Kim, Dongbo Xu, Lieve Teugels, Luka Kljucar, Chang-min Park, Philippe Foubert, A. Oak, M. H. Van der Veen, Jisun Lee, D. De Simone, Romuald Blanc, P. De Schepper, Michael Kocsis, Joren Severi, Kurt G. Ronse, Philippe Leray, Poulomi Das, Jan Doise, F. Schleicher, Anne-Laure Charley, Quoc Toan Le, Jerome Mitard
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
For many years traditional 193i lithography has been extended to the next technology node by means of multi-patterning techniques. However recently such a 193i technology became challenging and expensive to push beyond the technology node for complex
Autor:
Zaid El-Mekki, F. Schleicher, Frederic Lazzarino, D. Trivkovic, Zsolt Tokei, B. De-Wachter, S. V. Gompel, L. Halipre, E. Vancoille, S. Decoster, G. Muroch, Thomas Witters, L. Dupas, O. Varela-Pereira, B. Briggs, Quoc Toan Le, Harinarayanan Puliyalil, Christopher J. Wilson, Philippe Leray, N. Jourdan, I. Demonie, C. Lorant, Joost Bekaert, Nancy Heylen, Y. Kimura, Rogier Baert, M. H. van der Veen, J. Versluijs, Miroslav Cupak, Patrick Verdonck, K. Croes, Manoj Jaysankar, Anne-Laure Charley, J. Heijlen, J. Uk-Lee, Ivan Ciofi, Y. Drissi, V. Vega-Gonzalez, S. Paolillo, H. Vats, D. Montero, L. Rynders, Els Kesters, M. Ercken, A. Lesniewska, R. Kim, Lieve Teugels, T. Webers
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
The integration of high-aspect-ratio (AR) supervias (SV) into a 3 nm node test vehicle, bypassing an intermediate 21 nm pitch layer, is demonstrated. Place-and-route (PnR) simulations of the Power Delivery Network (PDN) proved IR-drop reduction with