Zobrazeno 1 - 10
of 39
pro vyhledávání: '"F. Saguin"'
Autor:
J. S. Steckel, E. Josse, A. G. Pattantyus-Abraham, M. Bidaud, B. Mortini, H. Bilgen, O. Arnaud, S. Allegret-Maret, F. Saguin, L. Mazet, S. Lhostis, T. Berger, K. Haxaire, L. L. Chapelon, L. Parmigiani, P. Gouraud, M. Brihoum, P. Bar, M. Guillermet, S. Favreau, R. Duru, J. Fantuz, S. Ricq, D. Ney, I. Hammad, D. Roy, A. Arnaud, B. Vianne, G. Nayak, N. Virollet, V. Farys, P. Malinge, A. Tournier, F. Lalanne, A. Crocherie, J. Galvier, S. Rabary, O. Noblanc, H. Wehbe-Alause, S. Acharya, A. Singh, J. Meitzner, D. Aher, H. Yang, J. Romero, B. Chen, C. Hsu, K. C. Cheng, Y. Chang, M. Sarmiento, C. Grange, E. Mazaleyrat, K. Rochereau
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ba7ab2beceb487279311b475596647
https://doi.org/10.1109/iedm19574.2021.9720560
https://doi.org/10.1109/iedm19574.2021.9720560
Autor:
Pascal Chevalier, Sebastien Fregonese, F. Saguin, Cristell Maneux, Thomas Zimmer, Alain Chantre, G. Avenier, J. Bustos, T. Schwartzmann
Publikováno v:
IEEE Transactions on Electron Devices. 55:585-593
A growing interest has been focused on silicon on insulator (SOI) technologies over the past years. Yet, few studies were carried out regarding the integration of vertical SiGe heterojunction bipolar transistors (HBTs) using such substrates. This pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cec91c27b1d386e0ad5eeb38136d8436
https://doi.org/10.1109/ted.2007.912361
https://doi.org/10.1109/ted.2007.912361
Autor:
Alain Chantre, Pascal Chevalier, B. Vandelle, Nicolas Zerounian, Anne Lachater, F. Saguin, Frédéric Aniel, T. Schwartzmann, B. Barbalat, L. Rubaldo
Publikováno v:
Semiconductor Science and Technology. 22:S99-S102
This paper deals with the introduction of high carbon doses in the base of SiGeC HBTs to create neutral base recombination (NBR). The base current IB was increased by a factor of 10, with significant enhancement of the collector-to-emitter breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba24ceb1518048d1b692f1c85a6d3cb
https://doi.org/10.1088/0268-1242/22/1/s23
https://doi.org/10.1088/0268-1242/22/1/s23
Autor:
B. Barbalat, Alain Chantre, Frédéric Aniel, Nicolas Zerounian, B. Vandelle, Pascal Chevalier, F. Saguin, L. Rubaldo, T. Schwartzmann
Publikováno v:
Scopus-Elsevier
We have presented the performances and electrical behavior of high-speed SiGeC HBTs having enhanced NBR by carbon insertion in excess. The current gain is strongly reduced, so that BVCEO increases by 0.5 V, and the fT times BVCEO product shifts from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4139c8bc882128e2f171eaa4affd5ee
https://doi.org/10.1109/istdm.2006.1716040
https://doi.org/10.1109/istdm.2006.1716040
Autor:
F. Pourchon, Roland Pantel, C. Raya, F. Judong, B. Geynet, G. Avenier, Pascal Chevalier, F. Saguin, L. Rubaldo, Alain Chantre, B. Barbalat, B. Vandelle, T. Schwartzmann
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
This paper presents investigations led to simplify the collector module of SiGeC HBTs in order to reduce technology cost. Outcome of this work is an HBT featuring an all-implanted collector with record fT and fmax (>250 GHz)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46ebe491610619a326e3b0f1ef244a28
https://doi.org/10.1109/bipol.2006.311148
https://doi.org/10.1109/bipol.2006.311148
Autor:
M. Proust, Didier Dutartre, G. Borot, Nicolas Zerounian, Alain Chantre, C. Richard, B. Vandelle, Pascal Chevalier, F. Saguin, Frédéric Aniel, F. Judong, B. Barbalat, L. Rubaldo
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::641fb47525e33767cd2b6511a5571281
https://doi.org/10.1109/bipol.2006.311166
https://doi.org/10.1109/bipol.2006.311166
Autor:
Alain Chantre, F. Pourchon, Damien Lenoble, L. Rubaldo, D. Lagarde, B. Vandelle, T. Schwartzmann, B. Barbalat, F. Saguin, Pascal Chevalier, J. Bustos, G. Avenier
Publikováno v:
Scopus-Elsevier
A low-cost SiGeC HBT module for bulk and SOI RFCMOS platforms is described. The device features an all-implanted collector and a novel fragmented emitter layout, and requires 4 masks only. Record performances are demonstrated, with cut-off frequencie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28e73de150f68dadff41b4b53ff0e67c
https://doi.org/10.1109/iedm.2005.1609521
https://doi.org/10.1109/iedm.2005.1609521
Autor:
B. Vandelle, F. Saguin, Thomas Zimmer, Alain Chantre, Pascal Chevalier, Didier Dutartre, G. Avenier, Cristell Maneux
Publikováno v:
International Silicon-Germanium Technology and Device Meeting
International Silicon-Germanium Technology and Device Meeting, Mar 2006, United States. p 268-269
Scopus-Elsevier
International Silicon-Germanium Technology and Device Meeting, Mar 2006, United States. p 268-269
Scopus-Elsevier
In this paper, we review the process and layout optimization of thin-film (150nm) SOI SiGe HBTs covering a wide range of fT-BVceo tradeoffs, i.e. from ~150GHz fT to ~8V BVceo. We have shown that a SiGe HBT with bulk-like fT-BVceo trade-off can be bui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9fb4ef4c95eae43224ebd959e729a04
https://hal.archives-ouvertes.fr/hal-00187273
https://hal.archives-ouvertes.fr/hal-00187273
Autor:
F. Saguin, C. Raynaud, Patrick Scheer, C. Clement, Ph. Benech, Gilles Dambrine, S. Boret, J.M. Fournier, Daniel Gloria, Sylvie Lepilliet, Frederic Gianesello, S. Montusclat
Publikováno v:
65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to 220 GHz
IMS2006-2006 IEEE MTT-S
IMS2006-2006 IEEE MTT-S, 2006, San Francisco, United States. pp.XX
2006 IEEE MTT-S International Microwave Symposium Digest
2006, 4 pp
IMS2006-2006 IEEE MTT-S
IMS2006-2006 IEEE MTT-S, 2006, San Francisco, United States. pp.XX
2006 IEEE MTT-S International Microwave Symposium Digest
2006, 4 pp
Today, measurement of 65 nm CMOS technology demonstrates Ft around 200 GHz and Fmax higher than 250 GHz as stated in G. Dambrine et al. (2005), which are clearly comparable to advanced commercially available 100 nm III-V HEMT or state-of-the-art SiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::050bb1b87debf74cf92217fc95b010c2
https://hal.archives-ouvertes.fr/hal-00147870
https://hal.archives-ouvertes.fr/hal-00147870
Autor:
Ph. Benech, Gilles Dambrine, F. Saguin, Daniel Gloria, J.M. Fournier, B. Van-Haaren, C. Raynaud, C. Tinella, Frederic Gianesello, C. Clement, P. Vincent, S. Boret
Publikováno v:
Proceedings of the 2006 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Among the numerous incoming new wireless standards, ultra wideband (UWB) systems are very attracting since they are able to transmit data over a wide spectrum of frequency bands with very low power and high data rates. The frequency band extends from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fc172ea1d9c3a584221748aa97c6c37
https://hal.archives-ouvertes.fr/hal-00126802
https://hal.archives-ouvertes.fr/hal-00126802